Using Standing Wave X Ray Photoemission Spectroscopy To Determine Interfacial Composition In Situ In A Multi Layer Magnetic Tunnel Junction PDF Download

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Using Standing-wave X-ray Photoemission Spectroscopy to Determine Interfacial Composition In-situ in a Multi-layer Magnetic Tunnel Junction

Using Standing-wave X-ray Photoemission Spectroscopy to Determine Interfacial Composition In-situ in a Multi-layer Magnetic Tunnel Junction
Author: Catherine Shaw Conlon
Publisher:
Total Pages:
Release: 2020
Genre:
ISBN:

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The Fe/MgO magnetic tunnel junction (MTJ) is a classic spintronic system, with current importance technologically, and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, non-destructive, in-situ measurement ideal for this system. The physical structures that are known from literature to contribute to the tunneling magneto-resistance (TMR) or the interlayer magnetic exchange coupling of this system include: stoichiometry of Fe, Mg, and O at the interface; interface roughness; MgO and Fe layer thicknesses; Fe oxidation at the interface; and symmetry of Fe on MgO and MgO on Fe interfaces. An in-depth understanding of the interface of this system is critical to developing an understanding of the magnetic properties. Fe/MgO/Fe MTJs grown with even small variations in the growth environment or by different procedures result in significant differences in these interface structures. Along with a deep probing and non-destructive technique for characterizing the buried interfaces, a measurement with the future possibility of simultaneous determinations of the buried chemical, physical, and electronic structure, valence band dispersion, and magnetism with depth specificity is of interest. We have applied hard x-ray photoemission spectroscopy (HXPS) and standing-wave (SW) HXPS in the few keV energy range to probe the structure of an epitaxially-grown MgO/Fe superlattice. HXPS is non-destructive, deep probing, and can determine these properties of interest. The SW technique allows for specific sample interfaces to be measured and compared to the bulk layer, and for structure determination with few-angstrom precision. We compare soft x-ray photoemission spectroscopy (SXPS) SW measurements to clearly demonstrate the advantages of the hard/tender x-ray excitation energy for this sample, and other similar superlattice samples. The superlattice sample consists of 9 repeats of MgO grown on Fe by magnetron sputtering on an MgO (001) substrate, with a protective Al2O3 capping layer. We determine through SW-HXPS that 8 of the 9 repeats are similar and ordered, with a period of 33 ± 4 Å, with minor presence of FeO at the interfaces and a significantly distorted top bilayer with c.a. 3 times the oxidation of the lower layers at the top MgO/Fe interface. There is evidence of asymmetrical oxidation on the top and bottom of the Fe layers. We find agreement with dark-field scanning transmission electron microscope (STEM) and x-ray reflectivity measurements. Through the STEM measurements we confirm an overall epitaxial stack with dislocations and warping at the interfaces of c.a. 5 Å. We also note a distinct difference in the top bilayer, especially MgO, with possible Fe inclusions. We discuss the impacts of this distorted top bilayer on some measurements of interest, including x-ray photoelectron diffraction and angle-resolved photoemission spectroscopy. We demonstrate that SW-HXPS can be used to probe deep buried interfaces of novel magnetic devices with few-angstrom precision. This supports crucial understanding of the interface structure of this system, which has direct implications for the interlayer magnetic exchange coupling. SW-HXPS shows promise for future directions with combined structural and magnetic measurements on a complex, nanolayered system with sensitive material components.


Spectroscopy of Complex Oxide Interfaces

Spectroscopy of Complex Oxide Interfaces
Author: Claudia Cancellieri
Publisher: Springer
Total Pages: 326
Release: 2018-04-09
Genre: Technology & Engineering
ISBN: 3319749897

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This book summarizes the most recent and compelling experimental results for complex oxide interfaces. The results of this book were obtained with the cutting-edge photoemission technique at highest energy resolution. Due to their fascinating properties for new-generation electronic devices and the challenge of investigating buried regions, the book chiefly focuses on complex oxide interfaces. The crucial feature of exploring buried interfaces is the use of soft X-ray angle-resolved photoemission spectroscopy (ARPES) operating on the energy range of a few hundred eV to increase the photoelectron mean free path, enabling the photons to penetrate through the top layers – in contrast to conventional ultraviolet (UV)-ARPES techniques. The results presented here, achieved by different research groups around the world, are summarized in a clearly structured way and discussed in comparison with other photoemission spectroscopy techniques and other oxide materials. They are complemented and supported by the most recent theoretical calculations as well as results of complementary experimental techniques including electron transport and inelastic resonant X-ray scattering.


Hard X-ray Photoelectron Spectroscopy (HAXPES)

Hard X-ray Photoelectron Spectroscopy (HAXPES)
Author: Joseph Woicik
Publisher: Springer
Total Pages: 576
Release: 2015-12-26
Genre: Science
ISBN: 3319240439

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This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.


Metals Abstracts

Metals Abstracts
Author:
Publisher:
Total Pages: 1622
Release: 1996
Genre: Metallurgy
ISBN:

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Physics of Surfaces and Interfaces

Physics of Surfaces and Interfaces
Author: Harald Ibach
Publisher: Springer Science & Business Media
Total Pages: 653
Release: 2006-11-18
Genre: Science
ISBN: 3540347100

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This graduate-level textbook covers the major developments in surface sciences of recent decades, from experimental tricks and basic techniques to the latest experimental methods and theoretical understanding. It is unique in its attempt to treat the physics of surfaces, thin films and interfaces, surface chemistry, thermodynamics, statistical physics and the physics of the solid/electrolyte interface in an integral manner, rather than in separate compartments. It is designed as a handbook for the researcher as well as a study-text for graduate students. Written explanations are supported by 350 graphs and illustrations.


Surface and Thin Film Analysis

Surface and Thin Film Analysis
Author: Gernot Friedbacher
Publisher: Wiley-VCH
Total Pages: 0
Release: 2011-06-07
Genre: Technology & Engineering
ISBN: 9783527320479

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Surveying and comparing all techniques relevant for practical applications in surface and thin film analysis, this second edition of a bestseller is a vital guide to this hot topic in nano- and surface technology. This new book has been revised and updated and is divided into four parts - electron, ion, and photon detection, as well as scanning probe microscopy. New chapters have been added to cover such techniques as SNOM, FIM, atom probe (AP),and sum frequency generation (SFG). Appendices with a summary and comparison of techniques and a list of equipment suppliers make this book a rapid reference for materials scientists, analytical chemists, and those working in the biotechnological industry. From a Review of the First Edition (edited by Bubert and Jenett) "... a useful resource..." (Journal of the American Chemical Society)


Semiconductor Material and Device Characterization

Semiconductor Material and Device Characterization
Author: Dieter K. Schroder
Publisher: John Wiley & Sons
Total Pages: 800
Release: 2015-06-29
Genre: Technology & Engineering
ISBN: 0471739065

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.


Atomic Layer Deposition for Semiconductors

Atomic Layer Deposition for Semiconductors
Author: Cheol Seong Hwang
Publisher: Springer Science & Business Media
Total Pages: 266
Release: 2013-10-18
Genre: Science
ISBN: 146148054X

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Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.


Ultrathin Magnetic Structures III

Ultrathin Magnetic Structures III
Author: J.A.C. Bland
Publisher: Springer Science & Business Media
Total Pages: 338
Release: 2004-12-13
Genre: Technology & Engineering
ISBN: 9783540219538

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The ability to understand and control the unique properties of interfaces has created an entirely new field of magnetism which already has a profound impact in technology and is providing the basis for a revolution in electronics. The last decade has seen dramatic progress in the development of magnetic devices for information technology but also in the basic understanding of the physics of magnetic nanostructures. This volume describes thin film magnetic properties and methods for characterising thin film structure topics that underpin the present 'spintronics' revolution in which devices are based on combined magnetic materials and semiconductors. Volume IV deals with the fundamentals of spintronics: magnetoelectronic materials, spin injection and detection, micromagnetics and the development of magnetic random access memory based on GMR and tunnel junction devices. Together these books provide readers with a comprehensive account of an exciting and rapidly developing field. The treatment is designed to be accessible both to newcomers and to experts already working in this field who would like to get a better understanding of this very diversified area of research.


Giant Magneto-Resistance Devices

Giant Magneto-Resistance Devices
Author: E. Hirota
Publisher: Springer Science & Business Media
Total Pages: 187
Release: 2013-03-09
Genre: Science
ISBN: 3662047772

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This is one of the first application-orientated books on the subject. The main topics are magnetic sensors with high resolutions and magnetic read heads with high sensitivities, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memory (MRAM) with non-volatile non-destructive and radiation-hard characteristics.