Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Tunable Bulk Acoustic Wave Resonators Based On Baxsr1 Xtio3 Thin Films PDF full book. Access full book title Tunable Bulk Acoustic Wave Resonators Based On Baxsr1 Xtio3 Thin Films.
| Author | : John Berge |
| Publisher | : |
| Total Pages | : 41 |
| Release | : 2009 |
| Genre | : |
| ISBN | : |
| Author | : John Berge |
| Publisher | : |
| Total Pages | : 101 |
| Release | : 2012 |
| Genre | : |
| ISBN | : 9789173856430 |
| Author | : Spartak Gevorgian |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 255 |
| Release | : 2013-02-14 |
| Genre | : Technology & Engineering |
| ISBN | : 1447149440 |
To handle many standards and ever increasing bandwidth requirements, large number of filters and switches are used in transceivers of modern wireless communications systems. It makes the cost, performance, form factor, and power consumption of these systems, including cellular phones, critical issues. At present, the fixed frequency filter banks based on Film Bulk Acoustic Resonators (FBAR) are regarded as one of the most promising technologies to address performance -form factor-cost issues. Even though the FBARs improve the overall performances the complexity of these systems remains high. Attempts are being made to exclude some of the filters by bringing the digital signal processing (including channel selection) as close to the antennas as possible. However handling the increased interference levels is unrealistic for low-cost battery operated radios. Replacing fixed frequency filter banks by one tuneable filter is the most desired and widely considered scenario. As an example, development of the software based cognitive radios is largely hindered by the lack of adequate agile components, first of all tuneable filters. In this sense the electrically switchable and tuneable FBARs are the most promising components to address the complex cost-performance issues in agile microwave transceivers, smart wireless sensor networks etc. Tuneable Film Bulk Acoustic Wave Resonators discusses FBAR need, physics, designs, modelling, fabrication and applications. Tuning of the resonant frequency of the FBARs is considered. Switchable and tuneable FBARs based on electric field induced piezoelectric effect in paraelectric phase ferroelectrics are covered. The resonance of these resonators may be electrically switched on and off and tuned without hysteresis. The book is aimed at microwave and sensor specialists in the industry and graduate students. Readers will learn about principles of operation and possibilities of the switchable and tuneable FBARs, and will be given general guidelines for designing, fabrication and applications of these devices.
| Author | : Humberto Campanella |
| Publisher | : Artech House |
| Total Pages | : 364 |
| Release | : 2010 |
| Genre | : Technology & Engineering |
| ISBN | : 1607839784 |
This groundbreaking book provides you with a comprehensive understanding of FBAR (thin-film bulk acoustic wave resonator), MEMS (microelectomechanical system), and NEMS (nanoelectromechanical system) resonators. For the first time anywhere, you find extensive coverage of these devices at both the technology and application levels. This practical reference offers you guidance in design, fabrication, and characterization of FBARs, MEMS and NEBS. It discusses the integration of these devices with standard CMOS (complementary-metal-oxide-semiconductor) technologies, and their application to sensing and RF systems. Moreover, this one-stop resource looks at the main characteristics, differences, and limitations of FBAR, MEMS, and NEMS devices, helping you to choose the right approaches for your projects. Over 280 illustrations and more than 130 equations support key topics throughout the book.
| Author | : Almonir Abdulgader Mansour |
| Publisher | : |
| Total Pages | : 203 |
| Release | : 2017 |
| Genre | : Acoustical materials |
| ISBN | : |
The explosive development of personal communications systems, navigation, satellite communications as well as personal computer and data processing systems together with the constant demand for higher speeds and larger bandwidths has driven fabrication technology to its limits. This, in turn, necessitates the development of novel functional materials for the fabrication of devices with superior performance and higher capacity at reduced manufacturing costs. Ferroelectric materials such as barium strontium titanate (BST) and strontium titanium oxide (STO) have received more attention by researchers and industry because of their field-induced piezoelectric property. This property gives these types of ferroelectric materials the ability to be switchable and tunable in the presence of an electric field. These features have allowed the ferroelectric materials to be used in many applications such as non-volatile memory and DRAMs, sensors, pyroelectric detectors, and tunable microwave devices. Therefore, with the ever increasing complexity in RF front-end receivers, and the demand for services (which in turn requires more functionalities), ferroelectric bulk acoustic wave (BAW) resonators and filters that are intrinsically switchable and promise to reduce the size and complexity of component parts. In this work, we present the design, fabrication and experimental evaluation of switchable and tunable thin film bulk acoustic wave (BAW) resonators, filters and duplexers for radio frequency (RF) applications. The switchability and tunability of these devices come from utilizing the electrostrictive effect of ferroelectric materials such as barium strontium titanate (BST) with the application of an external DC-bias voltage. The BAW resonators, filters and duplexers in this work were fabricated on different substrates as solidly mounted resonator (SMR) structure with number of periodic layers of silicon dioxide and tantalum oxide as a Bragg reflector in order to acoustically isolate the resonator from the damping effect of the substrate, enhancing the quality factor and temperature compensation.
| Author | : |
| Publisher | : |
| Total Pages | : 91 |
| Release | : 2010 |
| Genre | : |
| ISBN | : |
Thin film bulk acoustic wave resonators (FBAR) using piezoelectric AlN, ZnO and GaN thin films have attracted extensive research activities in the past years. Highly c-axis oriented (normal-plane orientation) binary semiconductor piezoelectric thin films are particularly investigated for resonators operating at the fundamental thickness longitudinal mode. Depending on the processing conditions, tilted polarization (c-axis off the normal direction to the substrate surface) is often found in the as-deposited piezoelectric thin films, which leads to the coexistence of thickness longitudinal mode and shear mode for the thin film resonators.
| Author | : Wei Liu |
| Publisher | : |
| Total Pages | : |
| Release | : 2017 |
| Genre | : |
| ISBN | : |
| Author | : Janine Conde |
| Publisher | : |
| Total Pages | : 157 |
| Release | : 2009 |
| Genre | : |
| ISBN | : |
| Author | : G. M. Ashley |
| Publisher | : |
| Total Pages | : 380 |
| Release | : 2005 |
| Genre | : |
| ISBN | : |
| Author | : T. W. Grudkowski |
| Publisher | : |
| Total Pages | : 12 |
| Release | : 1982 |
| Genre | : |
| ISBN | : |
Fundamental mode bulk acoustic wave resonators and filters have been fabricated from ZnO/Si composite thin films prepared by sputter depositing c-axis oriented polycrystalline ZnO onto single crystal silicon. Resonant frequencies of these devices, which are compatible with silicon IC technology, can be readily controlled in the 100 MHz to 1000 MHz range. Development of improved fabrication procedures is described, emphasizing the importance of smooth resonator surfaces and precise control of ZnO sputtering conditions. Chemical etch treatments of the ZnO is shown to markedly reduce spurious resonances. Device modeling theory is described and the good agreement between experimental data and theory is discussed. Filter insertion loss as low as 4.1 dB and bandwidths between 0.5 and 5 percent have been achieved, Q values as high as 2700 were observed, and out of band rejection of 45 dB was realized. (Author.
