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Thin Film Ferroelectric Materials and Devices

Thin Film Ferroelectric Materials and Devices
Author: R. Ramesh
Publisher: Springer Science & Business Media
Total Pages: 250
Release: 2013-11-27
Genre: Technology & Engineering
ISBN: 146156185X

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The past five years have witnessed some dramatic developments in the general area of ferroelectric thin films materials and devices. Ferroelectrics are not new materials by any stretch ofimagination. Indeed, they have been known since the early partofthis century and popular ferroelectric materials such as Barium Titanate have been in use since the second world war. In the late sixties and seventies, a considerable amountofresearch and development effort was made to create a solid state nonvolatile memory using ferroelectrics in a vary simple matrix-addressed scheme. These attempts failed primarily due to problems associated with either the materials ordue to device architectures. The early eighties saw the advent of new materials processing approaches, such as sol-gel processing, that enabled researchers to fabricate sub-micron thin films of ferroelectric materials on a silicon substrate. These pioneering developments signaled the onsetofa revival in the areaofferroelectric thin films, especially ferroelectric nonvolatile memories. Research and development effort in ferroelectric materials and devices has now hit a feverish pitch, Many university laboratories, national laboratories and advanced R&D laboratories oflarge IC manufacturers are deeply involved in the pursuit of ferroelectric device technologies. Many companies worldwide are investing considerable manpower and resources into ferroelectric technologies. Some have already announced products ranging from embedded memories in micro controllers, low density stand-alone memories, microwave circuit elements, andrf identification tags. There is now considerable optimism that ferroelectric devices andproducts will occupy a significant market-share in the new millennium.


Characterisation of Ferroelectric Bulk Materials and Thin Films

Characterisation of Ferroelectric Bulk Materials and Thin Films
Author: Markys G. Cain
Publisher: Springer
Total Pages: 283
Release: 2014-06-02
Genre: Technology & Engineering
ISBN: 140209311X

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This book presents a comprehensive review of the most important methods used in the characterisation of piezoelectric, ferroelectric and pyroelectric materials. It covers techniques for the analysis of bulk materials and thick and thin film materials and devices. There is a growing demand by industry to adapt and integrate piezoelectric materials into ever smaller devices and structures. Such applications development requires the joint development of reliable, robust, accurate and – most importantly – relevant and applicable measurement and characterisation methods and models. In the past few years there has been a rapid development of new techniques to model and measure the variety of properties that are deemed important for applications development engineers and scientists. The book has been written by the leaders in the field and many chapters represent established measurement best practice, with a strong emphasis on application of the methods via worked examples and detailed experimental procedural descriptions. Each chapter contains numerous diagrams, images, and measurement data, all of which are fully referenced and indexed. The book is intended to occupy space in the research or technical lab, and will be a valuable and practical resource for students, materials scientists, engineers, and lab technicians.


Ferroelectric Thin Films

Ferroelectric Thin Films
Author: Carlos Paz de Araujo
Publisher: Taylor & Francis US
Total Pages: 598
Release: 1996
Genre: Science
ISBN: 9782884491976

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The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.


Ferroelectric Thin Films VIII: Volume 596

Ferroelectric Thin Films VIII: Volume 596
Author: R. W. Schwartz
Publisher:
Total Pages: 610
Release: 2000-08-17
Genre: Technology & Engineering
ISBN:

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This book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.


Thin Film Physics And Devices: Fundamental Mechanism, Materials And Applications For Thin Films

Thin Film Physics And Devices: Fundamental Mechanism, Materials And Applications For Thin Films
Author: Jianguo Zhu
Publisher: World Scientific
Total Pages: 706
Release: 2021-06-18
Genre: Science
ISBN: 9811224005

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Thin films have an extremely broad range of applications from electronics and optics to new materials and devices. Collaborative and multidisciplinary efforts from physicists, materials scientists, engineers and others have established and advanced a field with key pillars constituting (i) the synthesis and processing of thin films, (ii) the understanding of physical properties in relation to the nanometer scale, (iii) the design and fabrication of nano-devices or devices with thin film materials as building blocks, and (iv) the design and construction of novel tools for characterization of thin films.Against the backdrop of the increasingly interdisciplinary field, this book sets off to inform the basics of thin film physics and thin film devices. Readers are systematically introduced to the synthesis, processing and application of thin films; they will also study the formation of thin films, their structure and defects, and their various properties — mechanical, electrical, semiconducting, magnetic, and superconducting. With a primary focus on inorganic thin film materials, the book also ventures on organic materials such as self-assembled monolayers and Langmuir-Blodgett films.This book will be effective as a teaching or reference material in the various disciplines, ranging from Materials Science and Engineering, Electronic Science and Engineering, Electronic Materials and Components, Semiconductor Physics and Devices, to Applied Physics and more. The original Chinese publication has been instrumental in this purpose across many Chinese universities and colleges.


Nanoscale Phenomena in Ferroelectric Thin Films

Nanoscale Phenomena in Ferroelectric Thin Films
Author: Seungbum Hong
Publisher: Springer Science & Business Media
Total Pages: 294
Release: 2013-11-27
Genre: Technology & Engineering
ISBN: 1441990445

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This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, "Testing and characterization of ferroelectric thin film capacitors," written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, "Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size," Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, "Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy," Prof. A.


Ferroelectric Thin Films

Ferroelectric Thin Films
Author: Masanori Okuyama
Publisher: Springer Science & Business Media
Total Pages: 272
Release: 2005-02-22
Genre: Computers
ISBN: 9783540241638

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Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.


Ferroelectric Thin Films

Ferroelectric Thin Films
Author: Masanori Okuyama
Publisher: Springer
Total Pages: 244
Release: 2009-09-02
Genre: Science
ISBN: 9783540806295

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Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.


Handbook of Thin Film Devices: Ferroelectric film devices

Handbook of Thin Film Devices: Ferroelectric film devices
Author: Maurice H. Francombe
Publisher: Academic Press
Total Pages: 268
Release: 2000
Genre: Technology & Engineering
ISBN:

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The highly industrialized world we live in depends for its survival and further growth on advanced electronic technologies which place a premium on rapidly improved performance versus size, weight, and cost. Small computers, high-definition TV, digital camcorders, flat-panel displays, and robotic systems are but a few examples of miniatured device technologies which are of critical importance to emerging societal, industrial, defense, and space needs. All of these technologies depend sensitively on the availability of miniature thin film components in array and/or integrated formats. This book provides that first multi-topical coverage of the semiconductor, optical, superconductor, magnetic, and ferroelectric devices and technologies responding to these needs. This book comprises five topical volumes edited by world authorities in their fields, id est semiconductor junction devices, semiconductor optics, superconducting film devices, magnetic film devices, and ferroelectric film devices. Well-known experts were invited to cover recent progress in aspects ranging from deposition and fabrication to device modeling, measurements, and new cutting-edge design approached for improved performance. This multitopic approach effectively demonstrates the broad-based and pervasive character of thin film techniques that impact and control a vast array of device functions that are critical to developments in computer technology, communications, television, defense and space systems, and industrial and consumer products. Readers are provided with both broad critical overviews and research level analysis and technical details. Key Features * A comprehensive discussion of the most promising and completely developed of thin film devices which impact the entire field of high-tech components and systems for commercial, defense and space applications * Edited and written by internationally known, authoritative experts and innovators, familiar with all aspects of research and development in their fields and with current and potential applications * Presents the reader with informed assessments of all candidate solid state film devices now being optimized for advanced application, e.g., in flat panel displays, solar energy conversion, high-speed and power components, radar technology, infrared imaging , advanced computers, laser sources, and numerous other arenas * Provides a well-balanced coverage of materials growth and optimization, thin-film device modelling , device fabrication and characterization, and future development directions;These inputs are critically important to both educators, designers, device technologists and manufacturers, and to system engineers * Furnishes useful insights on processing compatibility, materials and film device stability, interface engineering, cryogenic requirements and operation, lithography and micro-machining, and integrability for sub-systems * Provides a broad-based view of alternative and/or complimentary film device technologies in a single, well-referenced source * Ensures complete and detailed overview of solid-state device topics, comprehensive bibliographical information, and expert guidance in advanced and sophisticated areas of device technology and potental applications * Furnishes invaluable insights on competitive state-of-the-art thin film semiconductor, photonics, superconductor, magnetic and ferroelectric technologies, processing and compatibility,device options, performance potential and prospects for essentially all solid-state film components * An essential information source and primer for educators , researchers, engineers and technology leaders supplying a wealth of background theoretical and experimental details, as well as guidance for further advanced research and development , thesis topics and high-tech product design * Identifies key processing, fabrication, design, integration, compatibility problems and solutions involved in successful development of high-performance and stable device and sub-system architectures.


Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide
Author: Uwe Schroeder
Publisher: Woodhead Publishing
Total Pages: 570
Release: 2019-03-27
Genre: Technology & Engineering
ISBN: 0081024312

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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face