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The MOS System

The MOS System
Author: Olof Engström
Publisher: Cambridge University Press
Total Pages: 369
Release: 2014-09-25
Genre: Science
ISBN: 1107005930

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A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.


MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems

MOS Switched-Capacitor and Continuous-Time Integrated Circuits and Systems
Author: Rolf Unbehauen
Publisher: Springer Science & Business Media
Total Pages: 645
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3642836771

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The purpose of this book is to present analysis and design principles, procedures and techniques of analog integrated circuits which are to be implemented in MOS (metal oxide semiconductor) technology. MOS technology is becoming dominant in the realization of digital systems, and its use for analog circuits opens new pos sibilities for the design of complex mixed analog/digital VLSI (very large scale in tegration) chips. Although we are focusing attention in this book principally on circuits and systems which can be implemented in CMOS technology, many con siderations and structures are of a general nature and can be adapted to other promising and emerging technologies, namely GaAs (Gallium Arsenide) and BI MOS (bipolar MOS, i. e. circuits which combine both bipolar and CMOS devices) technology. Moreover, some of the structures and circuits described in this book can also be useful without integration. In this book we describe two large classes of analog integrated circuits: • switched capacitor (SC) networks, • continuous-time CMOS (unswitched) circuits. SC networks are sampled-data systems in which electric charges are transferred from one point to another at regular discrete intervals of time and thus the signal samples are stored and processed. Other circuits belonging to this class of sampled-data systems are charge transfer devices (CTD) and charge coupled dev ices (CCD). In contrast to SC circuits, continuous-time CMOS circuits operate continuously in time. They can be considered as subcircuits or building blocks (e. g.


MOS (Metal Oxide Semiconductor) Physics and Technology

MOS (Metal Oxide Semiconductor) Physics and Technology
Author: E. H. Nicollian
Publisher: John Wiley & Sons
Total Pages: 928
Release: 2002-11-21
Genre: Technology & Engineering
ISBN: 047143079X

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Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.


The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Author: B.E. Deal
Publisher: Springer Science & Business Media
Total Pages: 505
Release: 2013-11-09
Genre: Science
ISBN: 1489915885

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The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.


MOS Integrated Circuit Design

MOS Integrated Circuit Design
Author: E. Wolfendale
Publisher: Elsevier
Total Pages: 129
Release: 2013-10-22
Genre: Technology & Engineering
ISBN: 1483102491

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MOS Integral Circuit Design aims to help in the design of integrated circuits, especially large-scale ones, using MOS Technology through teaching of techniques, practical applications, and examples. The book covers topics such as design equation and process parameters; MOS static and dynamic circuits; logic design techniques, system partitioning, and layout techniques. Also featured are computer aids such as logic simulation and mask layout, as well as examples on simple MOS design. The text is recommended for electrical engineers who would like to know how to use MOS for integral circuit design.


Positrons in the MOS System

Positrons in the MOS System
Author: Maarten Clement
Publisher:
Total Pages: 188
Release: 1998
Genre:
ISBN: 9789040717321

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The New Enlisted MOS System

The New Enlisted MOS System
Author: United States. Department of the Army
Publisher:
Total Pages: 20
Release: 1954
Genre:
ISBN:

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