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Ion Implantation: Basics to Device Fabrication

Ion Implantation: Basics to Device Fabrication
Author: Emanuele Rimini
Publisher: Springer Science & Business Media
Total Pages: 400
Release: 2013-11-27
Genre: Technology & Engineering
ISBN: 1461522595

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Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.


Ion Implantation and Synthesis of Materials

Ion Implantation and Synthesis of Materials
Author: Michael Nastasi
Publisher: Springer Science & Business Media
Total Pages: 271
Release: 2007-05-16
Genre: Science
ISBN: 3540452982

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Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.


Ion Implantation

Ion Implantation
Author: Ishaq Ahmad
Publisher: BoD – Books on Demand
Total Pages: 154
Release: 2017-06-14
Genre: Science
ISBN: 9535132377

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Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.


Ion Implantation Science and Technology

Ion Implantation Science and Technology
Author: J.F. Ziegler
Publisher: Elsevier
Total Pages: 649
Release: 2012-12-02
Genre: Science
ISBN: 0323144012

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Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.


The Basics of Ion Implantation

The Basics of Ion Implantation
Author: Michael I. Current
Publisher:
Total Pages: 260
Release: 1997
Genre: Ion implantation
ISBN:

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Ion Implantation Science and Technology

Ion Implantation Science and Technology
Author: J.F. Ziegler
Publisher: Elsevier
Total Pages: 509
Release: 2012-12-02
Genre: Science
ISBN: 0323161650

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Ion Implantation Science and Technology: Second Edition, just like the first edition, serves as both an introduction and tutorial to the science, techniques, and machines involved in the subject. The book is divided into two parts - Part 1: Ion Implantation Science and Part 2: Ion Implantation Technology. Part 1 covers topics such as the stopping and range of ions in solids; ion implantation damage in silicon; experimental annealing and activation; and the measurement on ion implantation. Part 2 includes ion optics and focusing on implanter design; photoresist problems and particle contamination; ion implantation diagnostics and process control; and emission of ionizing radiation from ion implanters. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.


Ion-Solid Interactions

Ion-Solid Interactions
Author: Michael Nastasi
Publisher: Cambridge University Press
Total Pages: 572
Release: 1996-03-29
Genre: Science
ISBN: 052137376X

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Comprehensive guide to an important materials science technique for students and researchers.


Lon Implantation in Semiconductors

Lon Implantation in Semiconductors
Author: James Mayer
Publisher: Elsevier
Total Pages: 297
Release: 2012-12-02
Genre: Technology & Engineering
ISBN: 0323157211

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Ion Implantation in Semiconductors: Silicon and Germanium covers the developments in the major basic aspects in ion implantation in silicon and germanium. These aspects include dopant distribution and location, radiant damage, and electrical characteristics. This book is composed of six chapters and begins with a discussion on the factors affecting the electrical characteristics of implanted layers in silicon and germanium, such as range distributions of dopant species, lattice disorder, and location of dopant species on substitutional and interstitial sites in the lattice. The next chapters examine the basic principles of range distributions of implanted atoms and the problem of lattice disorder and radiation damage, which are vital in most implantation work. These topics are followed by an outline of the so-called channeling effect technique and its application in lattice location determination of implanted atoms. A chapter describes the dopant behavior in the layers where the majority of the implanted atoms are located, emphasizing the use of Hall-effect and sheet-resistivity measurements to determine the carrier concentration and mobility. The final chapter considers the primary characteristics of ion-implanted layers in semiconductors. This chapter also presents several rules of thumb, which allow first approximations to be made. This book is an ideal source for semiconductor specialists, researchers, and manufacturers.


Ion Implantation in Diamond, Graphite and Related Materials

Ion Implantation in Diamond, Graphite and Related Materials
Author: M.S. Dresselhaus
Publisher: Springer Science & Business Media
Total Pages: 212
Release: 2013-03-08
Genre: Science
ISBN: 3642771718

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Carbon has always been a unique and intriguing material from a funda mental standpoint and, at the same time, a material with many technological uses. Carbon-based materials, diamond, graphite and their many deriva tives, have attracted much attention in recent years for many reasons. Ion implantation, which has proven to be most useful in modifying the near surface properties of many kinds of materials, in particular semiconductors, has also been applied to carbon-based materials. This has yielded, mainly in the last decade, many scientifically interesting and technologically impor tant results. Reports on these studies have been published in a wide variety of journals and topical conferences, which often have little disciplinary overlap, and which often address very different audiences. The need for a review to cover in an integrated way the various diverse aspects of the field has become increasingly obvious. Such a review should allow the reader to get an overview of the research that has been done thus far, to gain an ap preciation of the common features in the response of the various carbon to ion impact, and to become aware of current research oppor allotropes tunities and unresolved questions waiting to be addressed. Realizing this, and having ourselves both contributed to the field, we decided to write a review paper summarizing the experimental and theoretical status of ion implantation into diamond, graphite and related materials.


Ion Implantation

Ion Implantation
Author: Geoffrey Dearnaley
Publisher: North-Holland
Total Pages: 826
Release: 1973
Genre: Science
ISBN:

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