Study Of Oxide Breakdown Hot Carrier And Nbti Effects On Mos Device And Circuit Reliability PDF Download
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Author | : Yi Liu |
Publisher | : |
Total Pages | : 103 |
Release | : 2005 |
Genre | : |
ISBN | : |
Download Study of Oxide Breakdown, Hot Carrier and NBTI Effects on MOS Device and Circuit Reliability Book in PDF, ePub and Kindle
As CMOS device sizes shrink, the channel electric field becomes higher and the hot carrier (HC) effect becomes more significant. When the oxide is scaled down to less than 3 nm, gate oxide breakdown (BD) often takes place. As a result, oxide trapping and interface generation cause long term performance drift and related reliability problems in devices and circuits.
Author | : Eiji Takeda |
Publisher | : Elsevier |
Total Pages | : 329 |
Release | : 1995-11-28 |
Genre | : Technology & Engineering |
ISBN | : 0080926223 |
Download Hot-Carrier Effects in MOS Devices Book in PDF, ePub and Kindle
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Author | : Cheng Wang |
Publisher | : Springer Science & Business Media |
Total Pages | : 345 |
Release | : 2012-12-06 |
Genre | : Science |
ISBN | : 1468485474 |
Download Hot Carrier Design Considerations for MOS Devices and Circuits Book in PDF, ePub and Kindle
As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Author | : Electrochemical society. Meeting |
Publisher | : The Electrochemical Society |
Total Pages | : 950 |
Release | : 2011 |
Genre | : Science |
ISBN | : 1566778654 |
Download Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11 Book in PDF, ePub and Kindle
This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.
Author | : Tibor Grasser |
Publisher | : Springer |
Total Pages | : 518 |
Release | : 2014-10-29 |
Genre | : Technology & Engineering |
ISBN | : 3319089943 |
Download Hot Carrier Degradation in Semiconductor Devices Book in PDF, ePub and Kindle
This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.
Author | : Jiann-Shiun Yuan |
Publisher | : Springer |
Total Pages | : 108 |
Release | : 2016-04-13 |
Genre | : Technology & Engineering |
ISBN | : 9811008841 |
Download CMOS RF Circuit Design for Reliability and Variability Book in PDF, ePub and Kindle
The subject of this book is CMOS RF circuit design for reliability. The device reliability and process variation issues on RF transmitter and receiver circuits will be particular interest to the readers in the field of semiconductor devices and circuits. This proposed book is unique to explore typical reliability issues in the device and technology level and then to examine their impact on RF wireless transceiver circuit performance. Analytical equations, experimental data, device and circuit simulation results will be given for clear explanation. The main benefit the reader derive from this book will be clear understanding on how device reliability issues affects the RF circuit performance subjected to operation aging and process variations.
Author | : Tibor Grasser |
Publisher | : Springer Science & Business Media |
Total Pages | : 805 |
Release | : 2013-10-22 |
Genre | : Technology & Engineering |
ISBN | : 1461479096 |
Download Bias Temperature Instability for Devices and Circuits Book in PDF, ePub and Kindle
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Author | : Shojiro Asai |
Publisher | : Springer |
Total Pages | : 800 |
Release | : 2018-07-20 |
Genre | : Technology & Engineering |
ISBN | : 4431565949 |
Download VLSI Design and Test for Systems Dependability Book in PDF, ePub and Kindle
This book discusses the new roles that the VLSI (very-large-scale integration of semiconductor circuits) is taking for the safe, secure, and dependable design and operation of electronic systems. The book consists of three parts. Part I, as a general introduction to this vital topic, describes how electronic systems are designed and tested with particular emphasis on dependability engineering, where the simultaneous assessment of the detrimental outcome of failures and cost of their containment is made. This section also describes the related research project “Dependable VLSI Systems,” in which the editor and authors of the book were involved for 8 years. Part II addresses various threats to the dependability of VLSIs as key systems components, including time-dependent degradations, variations in device characteristics, ionizing radiation, electromagnetic interference, design errors, and tampering, with discussion of technologies to counter those threats. Part III elaborates on the design and test technologies for dependability in such applications as control of robots and vehicles, data processing, and storage in a cloud environment and heterogeneous wireless telecommunications. This book is intended to be used as a reference for engineers who work on the design and testing of VLSI systems with particular attention to dependability. It can be used as a textbook in graduate courses as well. Readers interested in dependable systems from social and industrial–economic perspectives will also benefit from the discussions in this book.
Author | : |
Publisher | : |
Total Pages | : 780 |
Release | : 2006 |
Genre | : Dissertations, Academic |
ISBN | : |
Download Dissertation Abstracts International Book in PDF, ePub and Kindle
Author | : Souvik Mahapatra |
Publisher | : Springer |
Total Pages | : 282 |
Release | : 2015-08-05 |
Genre | : Technology & Engineering |
ISBN | : 8132225082 |
Download Fundamentals of Bias Temperature Instability in MOS Transistors Book in PDF, ePub and Kindle
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.