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Study of Infrared Nonlinear Processes in Semiconductors

Study of Infrared Nonlinear Processes in Semiconductors
Author: Peter A. Wolff
Publisher:
Total Pages: 17
Release: 1988
Genre:
ISBN:

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This program includes: 1.) Demonstration that phase transitions and electrical instabilities enhance optical nonlinearities in semiconductors. 2.) Discovery of exceedingly large third order optical nonlinearities CUBED CHI . 0.001 ESU with picosecond response time in zero gap materials (HgTe, HgCdTe, HgMnTe). 3.) First observation of impurity-induced optical nonlinearity in semiconductors. 4.) Prediction and observation of negative absolute carrier mobilities in quantum wells. (RH).


Optical Properties of Small Band Gap Semiconductors Subject to Laser Excitation. Nonlinear Infrared Properties of Semiconductors

Optical Properties of Small Band Gap Semiconductors Subject to Laser Excitation. Nonlinear Infrared Properties of Semiconductors
Author: T. C. McGill
Publisher:
Total Pages: 199
Release: 1982
Genre:
ISBN:

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A theoretical and experimental study of the optical properties of small band gap semiconductors subject to laser excitation and the nonlinear infrared properties of small band gap semiconductors subject to laser excitation and the nonlinear infrared properties of semiconductors has been carried out. These studies have led to an understanding of the nonradiative recombination mechanisms due to impurities via an Auger process. Predictions about the role of radiative and nonradiative processes in narrow band gap semiconductors have been made. Experiments performed on HgCdTe alloys with different composition provided the first systematic study of photoluminescence in these alloys and gave data that supported the conclusions on the relative importance of radiative and nonradiative processes in alloys. The study of the nonlinear infrared properties in the semiconductors resulted in the first complete theory of the phenomenon. Experiments to measure the role of impurities on the saturation intensity have given results in good agreement with theory. (Author).


Nonlinear Optical Processes in Two-Dimensional Semiconductor Structures

Nonlinear Optical Processes in Two-Dimensional Semiconductor Structures
Author: Yongrui Wang
Publisher:
Total Pages:
Release: 2015
Genre:
ISBN:

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The optical properties of two types of two-dimensional (2D) semiconductor structures are studied. One of them is for structures based on quantum wells (QWs), and the other is graphene. We study the dynamics of optically excited electron-hole plasma or magnetoplasma in uncoupled QW structure. Experimentally we have observed a delayed burst of optical pulse, or super fluorescence (SF). Time and energy-resolved measurement shows the center frequency of the pulse is red-shifting with time. We explain this by developing the generalized semiconductor Bloch equations (SBEs), where Coulomb interaction between electrons is taken into account. For electronhole plasma in quasi-equilibrium, the calculation shows the peak gain is near the Fermi-edge. So, the red-shifting is because of the decreasing of Fermi energy with time. The effect of Coulomb interaction in intersubband transitions is also studied, where we have developed equations similar to the SBEs, and show that the Coulomb effect could enhance particular second-order nonlinear optical processes. Quantum cascade lasers (QCLs) are well developed devices based on QWs. We study the active modulation in mid-infrared (mid-IR) QCLs. We show that QCLs with short gain recovery time can also generate short pulses by active modulation, while it is previously thought active modulation can only be applied for QCLs with long gain recovery time. Comparisons between the two cases show the performance of QCLs with short gain recovery time is more robust for active modulation. Also, mode-locking can be achieved by tuning the modulation period. As a natural 2D material, graphene has linear energy dispersion near the Dirac points. This leads to interesting electronic and optical properties. Under Landau quantization, we propose a scheme for achieving continuous-wave terahertz (THz) gain by mid-IR pumping. In this scheme, scattering of surface-optical (SO) phonons from the substrate is utilized to populate the upper laser state. All the important scattering processes are calculated to justify the design. We also study the properties of second-harmonic generation (SHG) in graphene without magnetic field. The experimental measurement shows peculiar relations between the polarizations of fundamental light and second-harmonic (SH) light. We develop a quantum theory to explain the observations. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/155620


Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics

Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics
Author: A. Andriesh
Publisher: Springer Science & Business Media
Total Pages: 476
Release: 2012-12-06
Genre: Science
ISBN: 9401154961

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The Workshop on Physics and Application of Non-crystalline Semiconductors in Optoelectronics was held from 15 to 17 October 1996 in Chisinau. republic of Moldova and was devoted to the problems of non-crystalline semiconducting materials. The reports covered two mjlin topics: theoretical basis of physics of non -crystalline materials and experimental results. In the framework of these major topics there were treated many subjects. concerning the physics of non-crystalline semiconductors and their specific application: -optical properties of non-crystalline semiconductors; -doping of glassy semiconductors and photoinduced effects in chalcogenide glasses and their application for practical purposes; -methods for investigation of the structure in non-crystalline semiconductors -new glassy materials for IR trasmittance and optoelectronics. Reports and communications were presented on various aspects of the theory. new physical principles. studies of the atomic structure. search and development of optoelectronics devices. Special attention was paid to the actual subject of photoinduced transformations and its applications. Experimental investigations covered a rather wide spectrum of materials and physical phenomena. As a novel item it is worth to mention the study of nonlinear optical effects in amorphous semiconducting films. The third order optical non linearities. fast photoinduced optical absorption and refraction. acusto-optic effects recently discovered in non-crystalline semiconductors could potentially be utilised for optical signal processing. The important problems of photoinduced structural transformations and related phenomena. which are very attractive and actual both from the scientific and practical points of view. received much attention in discussions at the conference.


Energy Research Abstracts

Energy Research Abstracts
Author:
Publisher:
Total Pages: 636
Release: 1989
Genre: Power resources
ISBN:

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