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Statistical Analysis and Sensor Based Modeling of Electrochemical Mechanical Polishing (ECMP) of Cu Blanket Wafer for Semiconductor Applications

Statistical Analysis and Sensor Based Modeling of Electrochemical Mechanical Polishing (ECMP) of Cu Blanket Wafer for Semiconductor Applications
Author: Sakthi Jaya Rahul Ravichandran
Publisher:
Total Pages: 110
Release: 2013
Genre:
ISBN:

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Copper electrochemical mechanical polishing (Cu ECMP) has attracted many scientists in the field of semiconductor manufacturing industry, as they are investigating whether to replace chemical mechanical polishing (CMP) with Cu ECMP after the introduction of porous low - k dielectric materials because of its increased efficiency and better quality. An approach to locating real time variations in Cu ECMP processes has been identified. The various regions in Cu ECMP, active, passive, trans-passive, and transient regions have been explored through current and voltage signals obtained from a data acquisition setup hooked up with the process. Extensive work has been done in characterizing and optimizing the process, but little work has been done in correlating the key process input variables (KPIV) such as voltage, platen speed and wafer carrier speed with the key process output variables (KPOV) such as the material removal rate (MRR) and surface roughness (Ra) using time-frequency patterns of the current-voltage signals and statistical models. Based on these analytical methods, optimal surface value was realized in the transient/trans-passive region. A mathematical model depicting ECMP was implemented in COMSOL to understand the characteristics of the process, which will be a great breakthrough in the field of semiconductor manufacturing.


Modeling of Planarization Technologies

Modeling of Planarization Technologies
Author: Daniel Truque
Publisher:
Total Pages: 83
Release: 2007
Genre:
ISBN:

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The need for better planarity becomes more critical in semiconductor manufacturing as dimensions and tolerance margins keep shrinking. The purpose of this thesis is to understand and model new technologies for the planarization of integrated circuits. Two technologies and models are explored: characterization and modeling of a novel polishing pad, and a dynamic wafer level physical model for electrochemical-mechanical polishing (ECMP). The novel pad contains water soluble particles that dissolve in the slurry when they reach the surface. Different pads, with varying particle concentrations and sizes, are tested by polishing test wafers to extract the necessary model parameters to model each pad's polishing performance. The effect on chip uniformity and step height planarization are studied. The simulations and analysis enable understanding and comparison of pad design decisions, to achieve the best tradeoff in the performance metrics considered. In the second planarization technology, wafer scale uniformity effects are studied in an emerging copper polishing alternative, ECMP. The proposed dynamic wafer level physical ECMP model is able to capture the physics behind the ECMP process, based on modeling of electrical current flowing through the copper thin film on the wafer surface and the ECMP electrolyte solution. The model is able to fit zonal relative removal rates with root mean square error less than 7%, compared to existing empirical models and experiments.


Advances in CMP Polishing Technologies

Advances in CMP Polishing Technologies
Author: Toshiro Doi
Publisher: William Andrew
Total Pages: 330
Release: 2011-12-06
Genre: Science
ISBN: 1437778593

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CMP and polishing are the most precise processes used to finish the surfaces of mechanical and electronic or semiconductor components. Advances in CMP/Polishing Technologies for Manufacture of Electronic Devices presents the latest developments and technological innovations in the field - making cutting-edge R&D accessible to the wider engineering community. Most of the applications of these processes are kept as confidential as possible (proprietary information), and specific details are not seen in professional or technical journals and magazines. This book makes these processes and applications accessible to a wider industrial and academic audience. Building on the fundamentals of tribology - the science of friction, wear and lubrication - the authors explore the practical applications of CMP and polishing across various market sectors. Due to the high pace of development of the electronics and semiconductors industry, many of the presented processes and applications come from these industries. Demystifies scientific developments and technological innovations, opening them up for new applications and process improvements in the semiconductor industry and other areas of precision engineering Explores stock removal mechanisms in CMP and polishing, and the challenges involved in predicting the outcomes of abrasive processes in high-precision environments The authors bring together the latest innovations and research from the USA and Japan


Wafer Manufacturing

Wafer Manufacturing
Author: Imin Kao
Publisher: John Wiley & Sons
Total Pages: 304
Release: 2021-01-05
Genre: Technology & Engineering
ISBN: 1118696239

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Presenting all the major stages in wafer manufacturing, from crystals to prime wafers. This book first outlines the physics, associated metrology, process modelling and quality requirements and the goes on to discuss wafer forming and wafer surface preparation techniques. The whole is rounded off with a chapter on the research and future challenges in wafer manufacturing.


Nano-scale Scratching in Chemical-mechanical Polishing

Nano-scale Scratching in Chemical-mechanical Polishing
Author: Thor Eusner
Publisher:
Total Pages: 254
Release: 2008
Genre:
ISBN:

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During the chemical-mechanical polishing (CMP) process, a critical step in the manufacture of ultra-large-scale integrated (ULSI) semiconductor devices, undesirable nano-scale scratches are formed on the surfaces being polished. As the width of the interconnect Cu lines continues to shrink to below 60 nm, and as the traditional Si02 dielectric is replaced by the compliant, lowdielectric-constant materials, scratching has emerged as a challenging problem. This thesis presents a contact mechanics based approach for modeling nano-scale scratching by the hard abrasive particles in the slurry. Single-particle models that use elastic and plastic analyses to determine both the lower- and upper-bounds for the load per particle are introduced. These bounds are established for both homogenous and composite coatings. Multi-particle models are also presented. These models use contact mechanics at the pad-particle-coating interface to relate the global parameters of CMP, such as pressure, particle radius, slurry volume fraction and the material and geometrical properties of the pad and coating, to the widths and depths of scratches in the coatings. A lower- and upper-limit for the scratch width and depth in CMP is defined. Controlled indentation and scratching experiments have been conducted using a Hysitron TriboIndenter to validate the single-particle models. Based on these experiments, the upper-bound load per particle is used to predict the widths and depths of scratches in coatings. Furthermore, polishing experiments have been conducted using a CMP tool to validate the limits. The upper-limit for the semi-width of a scratch is equal to the product of the particle radius and the square root of the ratio of pad hardness to coating hardness. For a typical CMP pad and Cu coating, this upper-limit is one-fifth of the particle radius. Based on the models and the experiments, practical solutions for mitigating scratching in CMP, especially Cu CMP, are suggested.


Face-up Chemical Mechanical Polishing

Face-up Chemical Mechanical Polishing
Author: Marvin Bryan Shieh
Publisher:
Total Pages: 54
Release: 2006
Genre:
ISBN:

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A working prototype face-up CMP tool has successfully been completed. Experiments conducted on the face-up CMP machine qualitatively correspond with the theoretical polishing model. Discrepancies in data from the theoretical model could potentially be caused by non-uniform loading of the polishing pad and uneven distribution of slurry over the pad due to the edge effects on fluid flow. Despite the discrepancies, experimental data suggest that the theoretical model used to describe blanket wafer polishing by the face-up CMP tool is at least partially valid.


Mechanics, Mechanisms, and Modeling of the Chemical Mechanical Polishing Process

Mechanics, Mechanisms, and Modeling of the Chemical Mechanical Polishing Process
Author: Jiun-Yu Lai
Publisher:
Total Pages: 616
Release: 2001
Genre:
ISBN:

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(Cont.) Additionally, contact mechanics models, which relate the pressure distribution to the pattern geometry and pad elastic properties, explain the die-scale variation of material removal rate (MRR) on pattern geometry. The pad displacement into low features of submicron lines is less than 0.1 nm. Hence the applied load is only carried by the high features, and the pressure on high features increases with the area fraction of interconnects. Experiments study the effects of pattern geometry on the rates of pattern planarization, oxide overpolishing and Cu dishing. It was observed that Cu dishing of submicron features is less than 20 nm and contributes less to surface non-uniformity than does oxide overpolishing. Finally, a novel in situ detection technique, based on the change of the reflectance of the patterned surface at different polishing stages, is developed to detect the process endpoint and minimize overpolishing. Models that employ light scattering theory and statistical treatment correlate the sampled reflectance with the surface topography and Cu area fraction for detecting the process regime and endpoint. The experimental results agree well with the endpoint detection schemes predicted by the models.


Electrochemical Nanotechnologies

Electrochemical Nanotechnologies
Author: Tetsuya Osaka
Publisher: Springer Science & Business Media
Total Pages: 283
Release: 2009-12-15
Genre: Technology & Engineering
ISBN: 1441914242

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In this book, the term "electrochemical nanotechnology" is defined as nanoprocessing by means of electrochemical techniques. This introductory book reviews the application of electrochemical nanotechnologies with the aim of understanding their wider applicability in evolving nanoindustries. These advances have impacted microelectronics, sensors, materials science, and corrosion science, generating new fields of research that promote interaction between biology, medicine, and microelectronics. This volume reviews nanotechnology applications in selected high technology areas with particular emphasis on advances in such areas. Chapters are classified under four different headings: Nanotechnology for energy devices - Nanotechnology for magnetic storage devices - Nanotechnology for bio-chip applications - Nanotechnology for MEMS/Packaging.


Chemical Mechanical Planarization of Microelectronic Materials

Chemical Mechanical Planarization of Microelectronic Materials
Author: Joseph M. Steigerwald
Publisher: John Wiley & Sons
Total Pages: 337
Release: 2008-09-26
Genre: Science
ISBN: 3527617752

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Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.