Stability Of Fully Deuterated Amorphous Silicon Thin Film Transistors PDF Download
Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Stability Of Fully Deuterated Amorphous Silicon Thin Film Transistors PDF full book. Access full book title Stability Of Fully Deuterated Amorphous Silicon Thin Film Transistors.
Author | : Shufan Lin |
Publisher | : |
Total Pages | : |
Release | : 2006 |
Genre | : |
ISBN | : |
Download Stability of Fully Deuterated Amorphous Silicon Thin Film Transistors Book in PDF, ePub and Kindle
Author | : Francis John Clough |
Publisher | : |
Total Pages | : |
Release | : 1991 |
Genre | : |
ISBN | : |
Download The Performance and Stability of Hydrogenated Amorphous Silicon Thin Film Transistors Book in PDF, ePub and Kindle
Author | : Materials Research Society. Meeting |
Publisher | : |
Total Pages | : 776 |
Release | : 2004-09-03 |
Genre | : Technology & Engineering |
ISBN | : |
Download Amorphous and Nanocrystalline Silicon Science and Technology 2004: Volume 808 Book in PDF, ePub and Kindle
This book celebrates 20 years of MRS symposia on the topic of amorphous silicon. Contributors showed that the simplified theories developed to explain the limited experimental information available in the early eighties have spurred more sophisticated experimentation - either refining the early understanding or making it irrelevant. The differences of opinion that continue to exist and emerge are probably the hallmark of the amazing vitality of this field. Applications range from 'mature' thin-film transistors, solar cells and image sensors, to the 'emerging' possibility of erbium-doped nanocrystalline silicon-based materials for lasers and amorphous silicon quantum dots for luminescent devices. The book discusses material characterization, growth processes and devices. Each chapter is further subdivided into sections that group papers around common themes. Topics include: nanomaterials; electronic structure; metastable effects; understanding of growth processes; laser-induced crystallization; metal-induced crystallization; other growth techniques; newer devices; solar cells and thin-film transistors.
Author | : |
Publisher | : |
Total Pages | : 768 |
Release | : 2004 |
Genre | : Amorphous semiconductors |
ISBN | : |
Download Amorphous and Nanocrystalline Silicon Science and Technology ... Book in PDF, ePub and Kindle
Author | : B. L. Stafford |
Publisher | : American Institute of Physics |
Total Pages | : 352 |
Release | : 1991 |
Genre | : Science |
ISBN | : |
Download Stability of Amorphous Silicon Materials and Solar Cells Book in PDF, ePub and Kindle
A reference for scientists working on amorphous silicon photovoltaic research and manufacturing. Researchers interested in solar energy should also find this volume of use.
Author | : Bahman Hekmatshoar |
Publisher | : |
Total Pages | : 246 |
Release | : 2010 |
Genre | : |
ISBN | : |
Download Highly Stable Amorphous Silicon Thin Film Transistors and Integration Approaches for Reliable Organic Light Emitting Diode Displays on Clear Plastic Book in PDF, ePub and Kindle
Author | : 陳顯德 |
Publisher | : |
Total Pages | : 134 |
Release | : 2000 |
Genre | : |
ISBN | : |
Download Fabrication and Instability Analysis of Schottky-contact Gated-four-probe Hydrogenated(deuterium) Amorphous Silicon Thin Film Transistor Book in PDF, ePub and Kindle
Author | : 孫銘賢 |
Publisher | : |
Total Pages | : 144 |
Release | : 1997 |
Genre | : |
ISBN | : |
Download Study of Deuterated Amorphous Silicon for Preparation and Light-induced Stability Book in PDF, ePub and Kindle
Author | : Akhavan Fomani, Arash |
Publisher | : University of Waterloo |
Total Pages | : 92 |
Release | : 2005 |
Genre | : Thin film transistors |
ISBN | : |
Download Threshold Voltage Instability and Relaxation in Hydrogenated Amorphous Silicon Thin Film Transistors [electronic Resource] Book in PDF, ePub and Kindle
This thesis presents a study of the bias-induced threshold voltage metastability phenomenon of the hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). An application of gate bias stress shifts the threshold voltage of a TFT. After the bias stress is removed, the threshold voltage eventually returns to its original value. The underlying physical mechanisms for the shift in threshold voltage during the application of the bias and after the removal of the bias stress are investigated. The creation of extra defect states in the band gap of a-Si:H close to the gate dielectric interface, and the charge trapping in the silicon nitride (SiN) gate dielectric are the most commonly considered instability mechanisms of threshold voltage. In the first part of this work, the defect state creation mechanism is reviewed and the kinetics of the charge trapping in the SiN is modelled assuming a simplified mono-energetic and a more realistic Gaussian distribution of the SiN traps. The charge trapping in the mono-energetic SiN traps was approximated by a logarithmic function of time. However, the charge trapping with a Gaussian distribution of SiN traps results in a more complex behavior. The change in the threshold voltage of a TFT after the gate bias has been removed is referred to threshold voltage relaxation, and it is investigated in the second part of this work. A study of the threshold voltage relaxation sheds more light on the metastability mechanisms of a-Si:H TFTs. Possible mechanisms considered for the relaxation of threshold voltage are the annealing of the extra defect states and the charge de-trapping from the SiN gate dielectric. The kinetics of the charge de-trapping from a mono-energetic and a Gaussian distribution of the SiN traps are analytically modelled. It is shown that the defect state annealing mechanisms cannot explain the observed threshold voltage relaxation, but a study of the kinetics of charge de-trapping helps to bring about a very good agreement with the experimentally obtained results. Using the experimentally measured threshold voltage relaxation results, a Gaussian distribution of gap states is extracted for the SiN. This explains the threshold voltage relaxation of TFT after the bias stress with voltages as high as 50V is removed. Finally, the results obtained from the threshold voltage relaxation make it possible to calculate the total charge trapped in the SiN and to quantitatively distinguish between the charge trapping mechanism and the defect state creation mechanisms. In conclusion, for the TFTs used in this thesis, the charge trapping in the SiN gate dielectric is shown to be the dominant threshold voltage metastability mechanism caused in short bias stress times.
Author | : |
Publisher | : |
Total Pages | : 0 |
Release | : 2008 |
Genre | : |
ISBN | : |
Download Study on the Instability of Hydrogenated Amorphous Silicon Thin Film Transistors Under Various Bias Stress Book in PDF, ePub and Kindle