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| Author | : Guoqiao Tao |
| Publisher | : |
| Total Pages | : 41 |
| Release | : 2009 |
| Genre | : |
| ISBN | : |
| Author | : Yuan Chen |
| Publisher | : |
| Total Pages | : 118 |
| Release | : 2007 |
| Genre | : |
| ISBN | : |
| Author | : International Integrated Reliability Workshop. 2005, South Lake Tahoe, Calif.. |
| Publisher | : |
| Total Pages | : 230 |
| Release | : 2006 |
| Genre | : |
| ISBN | : |
| Author | : Massimo Rudan |
| Publisher | : Springer Nature |
| Total Pages | : 1680 |
| Release | : 2022-11-10 |
| Genre | : Technology & Engineering |
| ISBN | : 3030798275 |
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
| Author | : Mikhail Baklanov |
| Publisher | : John Wiley & Sons |
| Total Pages | : 616 |
| Release | : 2012-04-02 |
| Genre | : Technology & Engineering |
| ISBN | : 0470662549 |
Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
| Author | : Michel Houssa |
| Publisher | : CRC Press |
| Total Pages | : 614 |
| Release | : 2003-12-01 |
| Genre | : Science |
| ISBN | : 1420034146 |
The drive toward smaller and smaller electronic componentry has huge implications for the materials currently being used. As quantum mechanical effects begin to dominate, conventional materials will be unable to function at scales much smaller than those in current use. For this reason, new materials with higher electrical permittivity will be requ
| Author | : Hideto Hidaka |
| Publisher | : Springer |
| Total Pages | : 253 |
| Release | : 2017-09-09 |
| Genre | : Technology & Engineering |
| ISBN | : 3319553062 |
This book provides a comprehensive introduction to embedded flash memory, describing the history, current status, and future projections for technology, circuits, and systems applications. The authors describe current main-stream embedded flash technologies from floating-gate 1Tr, floating-gate with split-gate (1.5Tr), and 1Tr/1.5Tr SONOS flash technologies and their successful creation of various applications. Comparisons of these embedded flash technologies and future projections are also provided. The authors demonstrate a variety of embedded applications for auto-motive, smart-IC cards, and low-power, representing the leading-edge technology developments for eFlash. The discussion also includes insights into future prospects of application-driven non-volatile memory technology in the era of smart advanced automotive system, such as ADAS (Advanced Driver Assistance System) and IoE (Internet of Everything). Trials on technology convergence and future prospects of embedded non-volatile memory in the new memory hierarchy are also described. Introduces the history of embedded flash memory technology for micro-controller products and how embedded flash innovations developed; Includes comprehensive and detailed descriptions of current main-stream embedded flash memory technologies, sub-system designs and applications; Explains why embedded flash memory requirements are different from those of stand-alone flash memory and how to achieve specific goals with technology development and circuit designs; Describes a mature and stable floating-gate 1Tr cell technology imported from stand-alone flash memory products - that then introduces embedded-specific split-gate memory cell technologies based on floating-gate storage structure and charge-trapping SONOS technology and their eFlash sub-system designs; Describes automotive and smart-IC card applications requirements and achievements in advanced eFlash beyond 4 0nm node.
| Author | : Walter L. Engl |
| Publisher | : North Holland |
| Total Pages | : 480 |
| Release | : 1986 |
| Genre | : Circuitos electrónicos |
| ISBN | : |
This book is the first of a new, seven volume series which aims to provide a comprehensive description of basic methods and technologies related to CAD for VLSI. The series includes up-to-date results and latest developments, with a good balance between theoretical and practical aspects of VLSI design. In this volume emphasis is placed on the basics of modeling, the opening chapters being devoted to fundamental process and device modeling. The following chapters cover different aspects of device modeling and also bridge to process simulation on the one side, and circuit simulation on the other. A systems approach to physical modeling, spanning the whole range of topics covered, is also dealt with. Recent conferences on the subject have signalled that physical modeling combined with technology, device and circuit optimization, will undoubtedly become a major trend in the future.
| Author | : Jens Lienig |
| Publisher | : Springer |
| Total Pages | : 171 |
| Release | : 2018-02-23 |
| Genre | : Technology & Engineering |
| ISBN | : 3319735586 |
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
| Author | : Tibor Grasser |
| Publisher | : Springer Nature |
| Total Pages | : 724 |
| Release | : 2020-04-26 |
| Genre | : Technology & Engineering |
| ISBN | : 3030375005 |
This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
