Simulation Of Transport In Nanodevices PDF Download
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Author | : François Triozon |
Publisher | : John Wiley & Sons |
Total Pages | : 400 |
Release | : 2016-12-27 |
Genre | : Technology & Engineering |
ISBN | : 1848215665 |
Download Simulation of Transport in Nanodevices Book in PDF, ePub and Kindle
Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.
Author | : Dragica Vasileska |
Publisher | : Springer Science & Business Media |
Total Pages | : 450 |
Release | : 2011-06-10 |
Genre | : Technology & Engineering |
ISBN | : 1441988408 |
Download Nano-Electronic Devices Book in PDF, ePub and Kindle
This book surveys the advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices. It systematically describes theoretical approaches and the numerical solutions that are used in explaining the operation of both power devices as well as nano-scale devices. It clearly explains for what types of devices a particular method is suitable, which is the most critical point that a researcher faces and has to decide upon when modeling semiconductor devices.
Author | : El-Saba, Muhammad |
Publisher | : IGI Global |
Total Pages | : 690 |
Release | : 2017-03-31 |
Genre | : Technology & Engineering |
ISBN | : 1522523138 |
Download Transport of Information-Carriers in Semiconductors and Nanodevices Book in PDF, ePub and Kindle
Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.
Author | : Yu Zhu |
Publisher | : World Scientific |
Total Pages | : 436 |
Release | : 2016-05-20 |
Genre | : Technology & Engineering |
ISBN | : 9813141441 |
Download Atomistic Simulation Of Quantum Transport In Nanoelectronic Devices (With Cd-rom) Book in PDF, ePub and Kindle
Computational nanoelectronics is an emerging multi-disciplinary field covering condensed matter physics, applied mathematics, computer science, and electronic engineering. In recent decades, a few state-of-the-art software packages have been developed to carry out first-principle atomistic device simulations. Nevertheless those packages are either black boxes (commercial codes) or accessible only to very limited users (private research codes). The purpose of this book is to open one of the commercial black boxes, and to demonstrate the complete procedure from theoretical derivation, to numerical implementation, all the way to device simulation. Meanwhile the affiliated source code constitutes an open platform for new researchers. This is the first book of its kind. We hope the book will make a modest contribution to the field of computational nanoelectronics.
Author | : Basil T. Wong |
Publisher | : Springer Science & Business Media |
Total Pages | : 243 |
Release | : 2008-07-19 |
Genre | : Science |
ISBN | : 3540736077 |
Download Thermal Transport for Applications in Micro/Nanomachining Book in PDF, ePub and Kindle
Beginning with an overview of nanomachining, this monograph introduces the relevant concepts from solid-state physics, thermodynamics, and lattice structures. It then covers modeling of thermal transport at the nanoscale and details simulations of different processes relevant to nanomachining. The final chapter summarizes the important points and discusses directions for future work to improve the modeling of nanomachining.
Author | : Sylvan Brocard |
Publisher | : |
Total Pages | : 0 |
Release | : 2014 |
Genre | : |
ISBN | : |
Download Full-band Quantum Transport Simulation of Advanced Nanodevices Book in PDF, ePub and Kindle
The semiconductor industry, in its continued effort to scale down nanoscale components further, needs to predict the physical properties of future components. As the size of such devices shrinks down, the currently prevalent semi-classical models start to fall apart, as quantum effects that are usually invisible in larger silicon devices gain in relevance in smaller and/or III-V based semiconductor devices. Therefore, modeling and simulation tools should describe adequately the favorite technological options that are currently under investigation. Consequently, full quantum simulations are necessary to the development of modern field effect transistors.The purpose of this PhD thesis is to develop the tools suitable for those simulations and use them to look into some of the most relevant design options for transistor technology.Hence, we used the Non Equilibrium Green's Functions formalism to simulate charge carriers transport and investigate field effect transistors.The semiconductor band structures were calculated within a continuous kp formalism, but we also developed an atomistic effective pseudopotential method to perform full-band simulations with a variety of ingredients like arbitrary crystal orientation, surface roughness, arbitrary alloy composition in the transistor channel, and so on. This pseudopotential method provides accurate results for a wider array of configurations with a smaller parametrization effort than the k.p formalism.We used these simulation tools to evaluate the transport properties of silicon and InAs based FinFETs, focusing on the supply-voltage scalability of III-V based devices compared to silicon counterparts. In particular, the feasibility of obtaining large on-current values in III-V devices is discussed.Then, we applied that formalism to III-V based gate all-around (GAA) nanowire tunnel-FETs (TFETs). Tunnel-FETs are a promising architecture for future transistors, facing optimization and performance challenges. We aimed at benchmarking the effect of technological boosters on the performances of TFETs, namely the use of strain engineering and of III-V heterojunctions. We've shown that these boosters allow TFETs to theoretically outperform standard MOSFET technology, but that strain engineering induces undesirable drawbacks.In order to design high performance TFETs without the use of strain, we finally introduced novel design options by exploiting a molar fraction grading of a ternary alloy or alternatively a quantum well in the source region. These device configurations dramatically change the density of state of the TFET at the source/channel junction and are therefore able to improve the electrical performance of TFETs with respect to conventional MOSFETs.
Author | : Christophe Jean Delerue |
Publisher | : Springer Science & Business Media |
Total Pages | : 313 |
Release | : 2013-06-29 |
Genre | : Technology & Engineering |
ISBN | : 3662089033 |
Download Nanostructures Book in PDF, ePub and Kindle
Provides the theoretical background needed by physicists, engineers and students to simulate nano-devices, semiconductor quantum dots and molecular devices. It presents in a unified way the theoretical concepts, the more recent semi-empirical and ab initio methods, and their application to experiments. The topics include quantum confinement, dielectric and optical properties, non-radiative processes, defects and impurities, and quantum transport. This guidebook not only provides newcomers with an accessible overview (requiring only basic knowledge of quantum mechanics and solid-state physics) but also provides active researchers with practical simulation tools.
Author | : David K. Ferry |
Publisher | : Cambridge University Press |
Total Pages | : 671 |
Release | : 2009-08-20 |
Genre | : Science |
ISBN | : 0521877482 |
Download Transport in Nanostructures Book in PDF, ePub and Kindle
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
Author | : Maxim V Ryzhii |
Publisher | : World Scientific |
Total Pages | : 194 |
Release | : 2008-04-28 |
Genre | : Technology & Engineering |
ISBN | : 9814472344 |
Download Physics And Modeling Of Tera- And Nano-devices Book in PDF, ePub and Kindle
Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book.
Author | : Mohamed F. El-Amin |
Publisher | : Elsevier |
Total Pages | : 432 |
Release | : 2023-06-17 |
Genre | : Technology & Engineering |
ISBN | : 0323905129 |
Download Numerical Modeling of Nanoparticle Transport in Porous Media Book in PDF, ePub and Kindle
Numerical Modeling of Nanoparticle Transport in Porous Media: MATLAB/PYTHON Approach focuses on modeling and numerical aspects of nanoparticle transport within single- and two-phase flow in porous media. The book discusses modeling development, dimensional analysis, numerical solutions and convergence analysis. Actual types of porous media have been considered, including heterogeneous, fractured, and anisotropic. Moreover, different interactions with nanoparticles are studied, such as magnetic nanoparticles, ferrofluids and polymers. Finally, several machine learning techniques are implemented to predict nanoparticle transport in porous media. This book provides a complete full reference in mathematical modeling and numerical aspects of nanoparticle transport in porous media. It is an important reference source for engineers, mathematicians, and materials scientists who are looking to increase their understanding of modeling, simulation, and analysis at the nanoscale. Explains the major simulation models and numerical techniques used for predicting nanoscale transport phenomena Provides MATLAB codes for most of the numerical simulation and Python codes for machine learning calculations Uses examples and results to illustrate each model type to the reader Assesses major application areas for each model type