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Silicon Devices and Process Integration

Silicon Devices and Process Integration
Author: Badih El-Kareh
Publisher: Springer Science & Business Media
Total Pages: 614
Release: 2009-01-09
Genre: Technology & Engineering
ISBN: 0387690107

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Silicon Devices and Process Integration covers state-of-the-art silicon devices, their characteristics, and their interactions with process parameters. It serves as a comprehensive guide which addresses both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. The book is compiled from the author’s industrial and academic lecture notes and reflects years of experience in the development of silicon devices. Features include: A review of silicon properties which provides a foundation for understanding the device properties discussion, including mobility-enhancement by straining silicon; State-of-the-art technologies on high-K gate dielectrics, low-K dielectrics, Cu interconnects, and SiGe BiCMOS; CMOS-only applications, such as subthreshold current and parasitic latch-up; Advanced Enabling processes and process integration. This book is written for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science.


Liquid Crystal on Silicon Devices

Liquid Crystal on Silicon Devices
Author: Andrés Márquez
Publisher: MDPI
Total Pages: 172
Release: 2019-11-19
Genre: Science
ISBN: 303921828X

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Liquid Crystal on Silicon (LCoS) has become one of the most widespread technologies for spatial light modulation in optics and photonics applications. These reflective microdisplays are composed of a high-performance silicon complementary metal oxide semiconductor (CMOS) backplane, which controls the light-modulating properties of the liquid crystal layer. State-of-the-art LCoS microdisplays may exhibit a very small pixel pitch (below 4 μm), a very large number of pixels (resolutions larger than 4K), and high fill factors (larger than 90%). They modulate illumination sources covering the UV, visible, and far IR. LCoS are used not only as displays but also as polarization, amplitude, and phase-only spatial light modulators, where they achieve full phase modulation. Due to their excellent modulating properties and high degree of flexibility, they are found in all sorts of spatial light modulation applications, such as in LCOS-based display systems for augmented and virtual reality, true holographic displays, digital holography, diffractive optical elements, superresolution optical systems, beam-steering devices, holographic optical traps, and quantum optical computing. In order to fulfil the requirements in this extensive range of applications, specific models and characterization techniques are proposed. These devices may exhibit a number of degradation effects such as interpixel cross-talk and fringing field, and time flicker, which may also depend on the analog or digital backplane of the corresponding LCoS device. The use of appropriate characterization and compensation techniques is then necessary.


Silicon Carbide Power Devices

Silicon Carbide Power Devices
Author: B. Jayant Baliga
Publisher: World Scientific
Total Pages: 526
Release: 2006-01-05
Genre: Technology & Engineering
ISBN: 9812774521

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Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.


Advanced Physical Models for Silicon Device Simulation

Advanced Physical Models for Silicon Device Simulation
Author: Andreas Schenk
Publisher: Springer Science & Business Media
Total Pages: 384
Release: 1998-07-07
Genre: Technology & Engineering
ISBN: 9783211830529

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From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [...], and a useful source of reference for experienced users ..." Microelectronics Journal


Silicon Photonics Design

Silicon Photonics Design
Author: Lukas Chrostowski
Publisher: Cambridge University Press
Total Pages: 439
Release: 2015-03-12
Genre: Science
ISBN: 1107085454

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This hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs.


New Insulators Devices and Radiation Effects

New Insulators Devices and Radiation Effects
Author:
Publisher: Elsevier
Total Pages: 967
Release: 1999-02-11
Genre: Technology & Engineering
ISBN: 0080534767

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Silicon technology today forms the basis of a world-wide, multi-billion dollar component industry. The reason for this expansion can be found not only in the physical properties of silicon but also in the unique properties of the silicon-silicon dioxide interface. However, silicon devices are still subject to undesired electrical phenomena called "instabilities". These are due mostly to the imperfect nature of the insulators used, to the not-so-perfect silicon-insulator interface and to the generation of defects and ionization phenomena caused by radiation. The problem of instabilities is addressed in this volume, the third of this book series. Vol.3 updates and supplements the material presented in the previous two volumes, and devotes five chapters to the problems of radiation-matter and radiation-device interactions. The volume will aid circuit manufacturers and circuit users alike to relate unstable electrical parameters and characteristics to the presence of physical defects and impurities or to the radiation environment which caused them.


Metal Impurities in Silicon-Device Fabrication

Metal Impurities in Silicon-Device Fabrication
Author: Klaus Graff
Publisher: Springer Science & Business Media
Total Pages: 228
Release: 2013-03-08
Genre: Technology & Engineering
ISBN: 3642975933

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A discussion of the different mechanisms responsible for contamination together with a survey of their impact on device performance. The author examines the specific properties of main and rare impurities in silicon, as well as the detection methods and requirements in modern technology. Finally, impurity gettering is studied along with modern techniques to determine gettering efficiency. Throughout all of these subjects, the book presents only reliable and up-to-date data so as to provide a thorough review of recent scientific investigations.


Electrical Characterization of Silicon-on-Insulator Materials and Devices

Electrical Characterization of Silicon-on-Insulator Materials and Devices
Author: Sorin Cristoloveanu
Publisher: Springer Science & Business Media
Total Pages: 389
Release: 2013-11-27
Genre: Technology & Engineering
ISBN: 1461522455

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Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.


Silicon Solid State Devices and Radiation Detection

Silicon Solid State Devices and Radiation Detection
Author: Claude Leroy
Publisher: World Scientific
Total Pages: 430
Release: 2012
Genre: Science
ISBN: 9814390046

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This book addresses the fundamental principles of interaction between radiation and matter, the principles of working and the operation of particle detectors based on silicon solid state devices. It covers a broad scope with respect to the fields of application of radiation detectors based on silicon solid state devices from low to high energy physics experiments including in outer space and in the medical environment. This book covers state-of-the-art detection techniques in the use of radiation detectors based on silicon solid state devices and their readout electronics, including the latest developments on pixelated silicon radiation detector and their application. The content and coverage of the book benefit from the extensive experience of the two authors who have made significant contributions as researchers as well as in teaching physics students in various universities.


Single-electron Devices and Circuits in Silicon

Single-electron Devices and Circuits in Silicon
Author: Zahid Ali Khan Durrani
Publisher: World Scientific
Total Pages: 300
Release: 2010
Genre: Science
ISBN: 1848164130

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This book provides a review of research on single-electron devices and circuits in silicon. It considers the design, fabrication, and characterization of single-electron transistors, single-electron memory devices, few-electron transfer devices such as electron pumps and turnstiles, and single-electron logic devices. In all cases, a review of various device designs is provided, and in many cases, the devices developed during the author's own research work are used as detailed examples. An introduction to the physics of the single-electron charging effects is also provided.