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Semiconductor Quantum Well Intermixing

Semiconductor Quantum Well Intermixing
Author: J. T. Lie
Publisher: CRC Press
Total Pages: 695
Release: 2014-04-21
Genre: Science
ISBN: 1482283344

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Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.


Semiconductor Quantum Well Intermixing

Semiconductor Quantum Well Intermixing
Author: J. T. Lie
Publisher: CRC Press
Total Pages: 716
Release: 2000-01-18
Genre: Science
ISBN: 9789056996895

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Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.


Diffusion and Quantum Well Intermixing

Diffusion and Quantum Well Intermixing
Author: Thamer A. Tabbakh
Publisher:
Total Pages: 0
Release: 2019
Genre: Technology & Engineering
ISBN:

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Diffusion or intermixing is the movement of particles through space. It primarily occurs in every form of matter because of thermal motion. Atom diffusion and intermixing can also happen in crystalline semiconductors whereby the atoms that are diffusing and intermixing move from one side of the lattice to the adjacent one in the crystal semiconductor. Atom diffusion, which may also involve defects (including native and dopant), is at the core of processing of semiconductors. The stages involved in semiconductor processing are growth, followed by post-growth, and then the construction stage comes last. The control of every aspect of diffusion is necessary to accomplish the required goals, therefore creating a need for knowing what diffuses at any point in time. This chapter will briefly summarize the techniques that are in existence and are used to create diffused quantum wells (QWs). Also, it will outline the examples of QW semiconductor lasers and light-emitting diode (LED) by the utilization of inter-diffusion techniques and give recent examples.


Selected Papers on Quantum Well Intermixing for Photonics

Selected Papers on Quantum Well Intermixing for Photonics
Author: E. Herbert Li
Publisher: SPIE-International Society for Optical Engineering
Total Pages: 634
Release: 1998
Genre: Photography
ISBN:

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SPIE Milestones are collections of seminal papers from the world literature covering important discoveries and developments in optics and photonics.


Physics of Quantum Well Devices

Physics of Quantum Well Devices
Author: B.R. Nag
Publisher: Springer Science & Business Media
Total Pages: 309
Release: 2006-04-11
Genre: Science
ISBN: 0306471272

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Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.


Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization
Author:
Publisher: Academic Press
Total Pages: 335
Release: 1997-06-12
Genre: Technology & Engineering
ISBN: 0080864430

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Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Provides basic knowledge of ion implantation-induced defects Focuses on physical mechanisms of defect annealing Utilizes electrical, physical, and optical characterization tools for processed semiconductors Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination