Rf And Microwave Modeling And Measurement Techniques For Field Effect Transistors PDF Download

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Modeling and Characterization of RF and Microwave Power FETs

Modeling and Characterization of RF and Microwave Power FETs
Author: Peter Aaen
Publisher: Cambridge University Press
Total Pages: 375
Release: 2007-06-25
Genre: Technology & Engineering
ISBN: 113946812X

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This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.


RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors

RF and Microwave Modeling and Measurement Techniques for Field Effect Transistors
Author: Jianjun Gao
Publisher: IET
Total Pages: 351
Release: 2010-06-30
Genre: Technology & Engineering
ISBN: 1891121898

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The purpose of this book is to introduce engineers and students to modern RF and microwave semiconductor device modelling and measurement techniques used in RF and microwave integrated circuit computer aided design (CAD).


Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices

Modeling And Parameter Extraction Techniques Of Silicon-based Radio Frequency Devices
Author: Ao Zhang
Publisher: World Scientific
Total Pages: 322
Release: 2023-03-21
Genre: Technology & Engineering
ISBN: 9811255377

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This comprehensive compendium describes the basic modeling techniques for silicon-based semiconductor devices, introduces the basic concepts of silicon-based passive and active devices, and provides its state-of-the-art modeling and equivalent circuit parameter extraction methods.The unique reference text benefits practicing engineers, technicians, senior undergraduate and first-year graduate students working in the areas of RF, microwave and solid-state device, and integrated circuit design.


Heterojunction Bipolar Transistors for Circuit Design

Heterojunction Bipolar Transistors for Circuit Design
Author: Jianjun Gao
Publisher: John Wiley & Sons
Total Pages: 280
Release: 2015-04-27
Genre: Technology & Engineering
ISBN: 1118921542

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A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods


Measurement Techniques for Radio Frequency Nanoelectronics

Measurement Techniques for Radio Frequency Nanoelectronics
Author: T. Mitch Wallis
Publisher: Cambridge University Press
Total Pages: 329
Release: 2017-09-14
Genre: Science
ISBN: 1107120683

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Featuring numerous examples linking theoretical concepts with real-world applications, this practical, cross-disciplinary guide will help you understand the fundamentals of radio frequency measurement of nanoscale devices. -- Résumé abrégé du livre.


Device Characterization and Modeling of Large-Size GaN HEMTs

Device Characterization and Modeling of Large-Size GaN HEMTs
Author: Jaime Alberto Zamudio Flores
Publisher: kassel university press GmbH
Total Pages: 257
Release: 2012-08-21
Genre: Gallium nitride
ISBN: 3862193640

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This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.


Optoelectronic Integrated Circuit Design and Device Modeling

Optoelectronic Integrated Circuit Design and Device Modeling
Author: Jianjun Gao
Publisher: John Wiley & Sons
Total Pages: 258
Release: 2011-09-19
Genre: Technology & Engineering
ISBN: 0470828382

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In Optoelectronic Integrated Circuit Design and Device Modeling, Professor Jianjun Gao introduces the fundamentals and modeling techniques of optoelectronic devices used in high-speed optical transmission systems. Gao covers electronic circuit elements such as FET, HBT, MOSFET, as well as design techniques for advanced optical transmitter and receiver front-end circuits. The book includes an overview of optical communication systems and computer-aided optoelectronic IC design before going over the basic concept of laser diodes. This is followed by modeling and parameter extraction techniques of lasers and photodiodes. Gao covers high-speed electronic semiconductor devices, optical transmitter design, and optical receiver design in the final three chapters. Addresses a gap within the rapidly growing area of transmitter and receiver modeling in OEICs Explains diode physics before device modeling, helping readers understand their equivalent circuit models Provides comprehensive explanations for E/O and O/E conversions done with laser and photodiodes Covers an extensive range of devices for high-speed applications Accessible for students new to microwaves Presentation slides available for instructor use This book is primarily aimed at practicing engineers, researchers, and post-graduates in the areas of RF, microwaves, IC design, photonics and lasers, and solid state devices. The book is also a strong supplement for senior undergraduates taking courses in RF and microwaves. Lecture materials for instructors available at www.wiley.com/go/gao


Fundamentals of Terahertz Devices and Applications

Fundamentals of Terahertz Devices and Applications
Author: Dimitris Pavlidis
Publisher: John Wiley & Sons
Total Pages: 580
Release: 2021-08-02
Genre: Technology & Engineering
ISBN: 1119460719

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An authoritative and comprehensive guide to the devices and applications of Terahertz technology Terahertz (THz) technology relates to applications that span in frequency from a few hundred GHz to more than 1000 GHz. Fundamentals of Terahertz Devices and Applications offers a comprehensive review of the devices and applications of Terahertz technology. With contributions from a range of experts on the topic, this book contains in a single volume an inclusive review of THz devices for signal generation, detection and treatment. Fundamentals of Terahertz Devices and Applications offers an exploration and addresses key categories and aspects of Terahertz Technology such as: sources, detectors, transmission, electronic considerations and applications, optical (photonic) considerations and applications. Worked examplesbased on the contributors extensive experience highlight the chapter material presented. The text is designed for use by novices and professionals who want a better understanding of device operation and use, and is suitable for instructional purposes This important book: Offers the most relevant up-to-date research information and insight into the future developments in the technology Addresses a wide-range of categories and aspects of Terahertz technology Includes material to support courses on Terahertz Technology and more Contains illustrative worked examples Written for researchers, students, and professional engineers, Fundamentals of Terahertz Devices and Applications offers an in-depth exploration of the topic that is designed for both novices and professionals and can be adopted for instructional purposes.


Microwave De-embedding

Microwave De-embedding
Author: Giovanni Crupi
Publisher: Academic Press
Total Pages: 481
Release: 2013-11-09
Genre: Technology & Engineering
ISBN: 0124045928

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This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor’s linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends Written by experts in the field, all of whom are leading researchers in the area Each chapter describes theoretical background and gives experimental results and practical applications Includes forewords by Giovanni Ghione and Stephen Maas