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Resonant Tunneling in Semiconductors

Resonant Tunneling in Semiconductors
Author: L.L. Chang
Publisher: Springer Science & Business Media
Total Pages: 526
Release: 2012-12-06
Genre: Science
ISBN: 1461538467

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This book contains the proceedings of the NATO Advanced Research Workshop on "Resonant Tunneling in Semiconductors: Physics and Applications", held at Escorial, Spain, on May 14-18, 1990. The tremendous growth in the past two decades in the field of resonant tunneling in semiconductor heterostructures has followed, if not outpaced, the expansion wit nessed in quantum structures in general. Resonant tunneling shares also the multi disciplinary nature of that broad area, with an emphasis on the underlying physics but with a coverage of material systems on the one end and device applications on the other. Indeed, that resonant tunneling provides great flexibility in terms of materials and configurations and that it is inherently a fast process with obvious device impli cations by the presence of a negative differential resistance have contributed to the unrelenting interest in this field. These proceedings consist of 49 refereed articles; they correspond to both invited and contributed talks at the workshop. Because of the intertwinning nature of the subject matter, it has been difficult to subdivide them in well-defined sections. Instead, they are arranged in several broad categories, meant to serve only as guidelines of emphasis on different topics and aspects. The book starts with an introduction to res onant tunneling by providing a perspective of the field in the first article. This is fol lowed by discussions of different material systems with various band-structure effects.


The Physics and Applications of Resonant Tunnelling Diodes

The Physics and Applications of Resonant Tunnelling Diodes
Author: Hiroshi Mizuta
Publisher: Cambridge University Press
Total Pages: 256
Release: 2006-11-23
Genre: Technology & Engineering
ISBN: 9780521032520

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This book is the first to give a comprehensive description of the physics and applications of resonant tunneling diodes. The opening chapters of the book set out the basic principles of coherent tunneling theory. The authors describe in detail the effects of impurity scattering, femtosecond dynamics, non-equilibrium distribution, and intrinsic bistabilities. They review the applications of RTDs, such as in high-frequency signal generation and multi-valued data storage, and close the book with a chapter on the new field of resonant tunneling through laterally confined zero-dimensional structures. Covering all the key theoretical and experimental aspects of this active area of research, the book will be of great value to graduate students of quantum transport physics and device engineering, as well as to researchers in both these fields.


The Physics and Applications of Resonant Tunnelling Diodes

The Physics and Applications of Resonant Tunnelling Diodes
Author: Hiroshi Mizuta
Publisher: Cambridge University Press
Total Pages: 255
Release: 1995-09-14
Genre: Science
ISBN: 0521432189

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A comprehensive description of the physics and applications of resonant tunnelling diodes.


Resonant Tunneling Diode Photonics Devices and Applications (Second Edition)

Resonant Tunneling Diode Photonics Devices and Applications (Second Edition)
Author: Charlie Ironside
Publisher:
Total Pages: 0
Release: 2023-12
Genre: Science
ISBN: 9780750357128

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The book uses a combination of quantum theory, semiconductor physics, and nonlinear dynamics to explain how resonant tunneling diode-based photonic devices can contribute to the development of photonic and neuromorphic systems and implement hardware specifically designed for neural networks which are at the heart of artificial intelligence.


Semiconductor Superlattices: Growth And Electronic Properties

Semiconductor Superlattices: Growth And Electronic Properties
Author: Fernando Agullo-rueda
Publisher: World Scientific
Total Pages: 269
Release: 1995-04-17
Genre: Science
ISBN: 9814501255

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This book surveys semiconductor superlattices, in particular their growth and electronic properties in an applied electric field perpendicular to the layers. The main developments in this field, which were achieved in the last five to seven years, are summarized. The electronic properties include transport through minibands at low electric field strengths, the Wannier-Stark localization and Bloch oscillations at intermediate electric field strengths, resonant tunneling of electrons and holes between different subbands, and the formation of electric field domains for large carrier densities at high electric field strengths.


Superlattice to Nanoelectronics

Superlattice to Nanoelectronics
Author: Raphael Tsu
Publisher: Elsevier
Total Pages: 346
Release: 2010-10-22
Genre: Technology & Engineering
ISBN: 0080968147

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Superlattice to Nanoelectronics, Second Edition, traces the history of the development of superlattices and quantum wells from their origins in 1969. Topics discussed include the birth of the superlattice; resonant tunneling via man-made quantum well states; optical properties and Raman scattering in man-made quantum systems; dielectric function and doping of a superlattice; and quantum step and activation energy. The book also covers semiconductor atomic superlattice; Si quantum dots fabricated from annealing amorphous silicon; capacitance, dielectric constant, and doping quantum dots; porous silicon; and quantum impedance of electrons. Written by one of the founders of this field Delivers over 20% new material, including new research and new technological applications Provides a basic understanding of the physics involved from first principles, while adding new depth, using basic mathematics and an explanation of the background essentials