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Resistive Switching

Resistive Switching
Author: Daniele Ielmini
Publisher: John Wiley & Sons
Total Pages: 1010
Release: 2015-12-23
Genre: Technology & Engineering
ISBN: 3527680934

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With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.


Resistive Random Access Memory (RRAM)

Resistive Random Access Memory (RRAM)
Author: Shimeng Yu
Publisher: Springer Nature
Total Pages: 71
Release: 2022-06-01
Genre: Technology & Engineering
ISBN: 3031020308

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RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.


ReRAM-based Machine Learning

ReRAM-based Machine Learning
Author: Hao Yu
Publisher: IET
Total Pages: 260
Release: 2021-03-05
Genre: Computers
ISBN: 1839530812

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Serving as a bridge between researchers in the computing domain and computing hardware designers, this book presents ReRAM techniques for distributed computing using IMC accelerators, ReRAM-based IMC architectures for machine learning (ML) and data-intensive applications, and strategies to map ML designs onto hardware accelerators.


Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
Author: Yoshio Nishi
Publisher: Elsevier
Total Pages: 456
Release: 2014-06-24
Genre: Computers
ISBN: 0857098098

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New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)


Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations
Author: Jennifer Rupp
Publisher: Springer Nature
Total Pages: 386
Release: 2021-10-15
Genre: Technology & Engineering
ISBN: 3030424243

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This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.


Perovskite Materials, Devices and Integration

Perovskite Materials, Devices and Integration
Author: He Tian
Publisher: BoD – Books on Demand
Total Pages: 192
Release: 2020-06-10
Genre: Technology & Engineering
ISBN: 1789850711

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Perovskites have attracted great attention in the fields of energy storage, pollutant degradation as well as optoelectronic devices due to their excellent properties. This kind of material can be divided into two categories; inorganic perovskite represented by perovskite oxide and organic-inorganic hybrid perovskite, which have described the recent advancement separately in terms of catalysis and photoelectron applications. This book systematically illustrates the crystal structures, physic-chemical properties, fabrication process, and perovskite-related devices. In a word, perovskite has broad application prospects. However, the current challenges cannot be ignored, such as toxicity and stability.


Resistive Random Access Memory

Resistive Random Access Memory
Author: Arnab Hazra
Publisher: LAP Lambert Academic Publishing
Total Pages: 96
Release: 2012-04
Genre:
ISBN: 9783848488322

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Resistive Random Access Memory (RRAM) is a transistor free non-volatile dynamic RAM cell with very simple Metal-Insulator-Metal (MIM) structure and very high switching speed and high density memories. Different types of oxides like Transition Metal Oxides, Perovskite Oxides etc are used as the insulating dielectric layer of the capacitor like MIM structure. This ion-conducting oxide insulating layer can change its resistance by externally stimulated electric pulses with different amplitude and frequency. The steps precondition the system which can subsequently be switched between high conductive ON or Low Resistive State (LRS) and a less conductive OFF or High Resistive State (HRS). In this experimental study Sol-gel derived Titanium Dioxide (TiO2) is considered as the ion conducting insulating dielectric material of this RRAM device. Pd (Ag)/TiO2 /Pd (Ag) Metal-Insulator-Metal structure for RRAM devices have been designed and fabricated and studied in this book. Different analytical models and explanations to establish the mechanism behind the Transition metal oxide based RRAM device and Resistive Switching phenomenon are the addition features of this book.


Normally-Off Computing

Normally-Off Computing
Author: Takashi Nakada
Publisher: Springer
Total Pages: 136
Release: 2017-01-18
Genre: Computers
ISBN: 4431565051

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As a step toward ultimate low-power computing, this book introduces normally-off computing, which involves inactive components of computer systems being aggressively powered off with the help of new non-volatile memories (NVMs). Because the energy consumption of modern information devices strongly depends on both hardware and software, co-design and co-optimization of hardware and software are indispensable to improve energy efficiency. The book discusses various topics including (1) details of low-power technologies including power gating, (2) characteristics of several new-generation NVMs, (3) normally-off computing architecture, (4) important technologies for implementing normally-off computing, (5) three practical implementations: healthcare, mobile information devices, and sensor network systems for smart city applications, and (6) related research and development. Bridging computing methodology and emerging memory devices, the book is designed for both hardware and software designers, engineers, and developers as comprehensive material for understanding normally-off computing.


Polymer Nanocomposite Materials

Polymer Nanocomposite Materials
Author: Ye Zhou
Publisher: John Wiley & Sons
Total Pages: 304
Release: 2021-03-24
Genre: Technology & Engineering
ISBN: 3527826505

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Polymer Nanocomposite Materials Discover an authoritative overview of zero-, one-, and two-dimensional polymer nanomaterials Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices delivers an original and insightful treatment of polymer nanocomposite applications in energy, information, and biotechnology. The book systematically reviews the preparation and characterization of polymer nanocomposites from zero-, one-, and two-dimensional nanomaterials. The two distinguished editors have selected resources that thoroughly explore the applications of polymer nanocomposites in energy, information, and biotechnology devices like sensors, solar cells, data storage devices, and artificial synapses. Academic researchers and professional developers alike will enjoy one of the first books on the subject of this environmentally friendly and versatile new technology. Polymer Nanocomposite Materials discusses challenges associated with the devices and materials, possible strategies for future directions of the technology, and the possible commercial applications of electronic devices built on these materials. Readers will also benefit from the inclusion of: A thorough introduction to the fabrication of conductive polymer composites and their applications in sensors An exploration of biodegradable polymer nanocomposites for electronics and polymer nanocomposites for photodetectors Practical discussions of polymer nanocomposites for pressure sensors and the application of polymer nanocomposites in energy storage devices An examination of functional polymer nanocomposites for triboelectric nanogenerators and resistive switching memory Perfect for materials scientists and polymer chemists, Polymer Nanocomposite Materials: Applications in Integrated Electronic Devices will also earn a place in the libraries of sensor developers, electrical engineers, and other professionals working in the sensor industry seeking an authoritative one-stop reference for nanocomposite applications.