Recent Advances In Pmos Negative Bias Temperature Instability PDF Download
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| Author | : Souvik Mahapatra |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2022 |
| Genre | : |
| ISBN | : 9789811661211 |
Download Recent Advances in PMOS Negative Bias Temperature Instability Book in PDF, ePub and Kindle
This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
| Author | : Souvik Mahapatra |
| Publisher | : Springer Nature |
| Total Pages | : 322 |
| Release | : 2021-11-25 |
| Genre | : Technology & Engineering |
| ISBN | : 9811661200 |
Download Recent Advances in PMOS Negative Bias Temperature Instability Book in PDF, ePub and Kindle
This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.
| Author | : Tibor Grasser |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 805 |
| Release | : 2013-10-22 |
| Genre | : Technology & Engineering |
| ISBN | : 1461479096 |
Download Bias Temperature Instability for Devices and Circuits Book in PDF, ePub and Kindle
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
| Author | : Souvik Mahapatra |
| Publisher | : Springer |
| Total Pages | : 282 |
| Release | : 2015-08-05 |
| Genre | : Technology & Engineering |
| ISBN | : 8132225082 |
Download Fundamentals of Bias Temperature Instability in MOS Transistors Book in PDF, ePub and Kindle
This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
| Author | : K.P. Staudhammer |
| Publisher | : Elsevier |
| Total Pages | : 715 |
| Release | : 2001-02-08 |
| Genre | : Technology & Engineering |
| ISBN | : 0080550770 |
Download Fundamental Issues and Applications of Shock-Wave and High-Strain-Rate Phenomena Book in PDF, ePub and Kindle
This book contains the proceedings of EXPLOMETTM 2000, International Conference on Fundamental Issues and Applications of Shock-Wave and High-Strain-Rate Phenomena, held in Albuquerque, New Mexico, 2000; the fifth in the EXPLOMETTM quinquennial series which began in Albuquerque in 1980. The book is divided into five major sections with a total of 85 chapters. Section I deals with materials issues in shock and high strain rates while Section II covers shock consolidation, reactions, and synthesis. Materials aspects of ballistic and hypervelocity impact are covered in Section III followed by modeling and simulation in Section IV and a range of novel applications of shock and high-strain-rate phenomena in Section V. Like previous conference volumes published in 1980, 1985, and 1995, the current volume includes contributions from fourteen countries outside the United States. As a consequence, it is hoped that this book will serve as a global summary of current issues involving shock and high-strain-rate phenomena as well as a general reference and teaching componant for specializd curricula dealing with these features in a contemporary way. Over the past twenty years, the EXPLOMETTM Conferences have created a family of participants who not only converse every five years but who have developed long-standing interactions and professional relationships which continue to stimulate new concepts and applications particularly rooted in basic materials behavior.
| Author | : Colin Wood |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 523 |
| Release | : 2007-10-16 |
| Genre | : Technology & Engineering |
| ISBN | : 0387683194 |
Download Polarization Effects in Semiconductors Book in PDF, ePub and Kindle
This book presents the latest understanding of the solid physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of hexagonal semiconductors, and the piezo-electric effects in thin film hetero-structures which are used in wide forbidden band gap sensor, electronic and opto-electronic semiconductor devices.
| Author | : Willem Dirk van Driel |
| Publisher | : Springer Nature |
| Total Pages | : 405 |
| Release | : |
| Genre | : |
| ISBN | : 3031593618 |
Download Recent Advances in Microelectronics Reliability Book in PDF, ePub and Kindle
| Author | : M. Koizumi |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 410 |
| Release | : 1991-06-30 |
| Genre | : Technology & Engineering |
| ISBN | : 9781851665969 |
Download Isostatic Pressing Book in PDF, ePub and Kindle
This updated volume is intended as a reference text on the technology of hot and cold isostatic pressing together with applications for development of new materials.
| Author | : 0 Meyers, |
| Publisher | : CRC Press |
| Total Pages | : 1852 |
| Release | : 2023-07-21 |
| Genre | : Technology & Engineering |
| ISBN | : 1000950190 |
Download Shock Wave and High-Strain-Rate Phenomena in Materials Book in PDF, ePub and Kindle
These proceedings of EXPLOMET 90, the International Conference on the Materials Effects of Shock-Wave and High-Strain-Rate Phenomena, held August 1990, in La Jolla, California, represent a global and up-to-date appraisal of this field. Contributions (more than 100) deal with high-strain-rate deforma
| Author | : Arokia Nathan |
| Publisher | : John Wiley & Sons |
| Total Pages | : 469 |
| Release | : 2023-08-01 |
| Genre | : Technology & Engineering |
| ISBN | : 139420244X |
Download 75th Anniversary of the Transistor Book in PDF, ePub and Kindle
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
