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Process for Depositing Epitaxial Alkaline Earth Oxide Onto a Substrate and Structures Prepared with the Process

Process for Depositing Epitaxial Alkaline Earth Oxide Onto a Substrate and Structures Prepared with the Process
Author:
Publisher:
Total Pages:
Release: 1996
Genre:
ISBN:

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A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.


Process for Depositing an Oxide Epitaxially Onto a Silicon Substrate and Structures Prepared with the Process

Process for Depositing an Oxide Epitaxially Onto a Silicon Substrate and Structures Prepared with the Process
Author:
Publisher:
Total Pages:
Release: 1993
Genre:
ISBN:

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A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.


Review

Review
Author: Oak Ridge National Laboratory
Publisher:
Total Pages: 616
Release: 1996
Genre: Nuclear energy
ISBN:

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Nature

Nature
Author: Sir Norman Lockyer
Publisher:
Total Pages: 1402
Release: 2004
Genre: Electronic journals
ISBN:

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Chemical Vapor Deposition: 1960-1980

Chemical Vapor Deposition: 1960-1980
Author: Donald T. Hawkins
Publisher: Springer
Total Pages: 762
Release: 1981-11-30
Genre: Reference
ISBN:

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Generic Process for Preparing a Crystalline Oxide Upon a Group IV Semiconductor Substrate

Generic Process for Preparing a Crystalline Oxide Upon a Group IV Semiconductor Substrate
Author:
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Total Pages:
Release: 2000
Genre:
ISBN:

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A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.


Oxide Ultrathin Films

Oxide Ultrathin Films
Author: Gianfranco Pacchioni
Publisher: John Wiley & Sons
Total Pages: 368
Release: 2012-09-19
Genre: Technology & Engineering
ISBN: 3527640193

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A wealth of information in one accessible book. Written by international experts from multidisciplinary fields, this in-depth exploration of oxide ultrathin films covers all aspects of these systems, starting with preparation and characterization, and going on to geometrical and electronic structure, as well as applications in current and future systems and devices. From the Contents: Synthesis and Preparation of Oxide Ultrathin Films Characterization Tools of Oxide Ultrathin Films Ordered Oxide Nanostructures on Metal Surfaces Unusual Properties of Oxides and Other Insulators in the Ultrathin Limit Silica and High-K Dielectrics Thin Films in Microelectronics Oxide Passive Films and Corrosion Protection Oxide Films as Catalytic Materials and as Models of Real Catalysts Oxide Films in Spintronics Oxide Ultrathin Films in Solid Oxide Fuel Cells Transparent Conducting and Chromogenic Oxide Films as Solar Energy Materials Oxide Ultrathin Films in Sensor Applications Ferroelectricity in Ultrathin Film Capacitors Titania Thin Films in Biocompatible Materials and Medical Implants Oxide Nanowires for New Chemical Sensor Devices


Chemical Solution Deposition of Functional Oxide Thin Films

Chemical Solution Deposition of Functional Oxide Thin Films
Author: Theodor Schneller
Publisher: Springer Science & Business Media
Total Pages: 801
Release: 2014-01-24
Genre: Technology & Engineering
ISBN: 3211993118

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This is the first text to cover all aspects of solution processed functional oxide thin-films. Chemical Solution Deposition (CSD) comprises all solution based thin- film deposition techniques, which involve chemical reactions of precursors during the formation of the oxide films, i. e. sol-gel type routes, metallo-organic decomposition routes, hybrid routes, etc. While the development of sol-gel type processes for optical coatings on glass by silicon dioxide and titanium dioxide dates from the mid-20th century, the first CSD derived electronic oxide thin films, such as lead zirconate titanate, were prepared in the 1980’s. Since then CSD has emerged as a highly flexible and cost-effective technique for the fabrication of a very wide variety of functional oxide thin films. Application areas include, for example, integrated dielectric capacitors, ferroelectric random access memories, pyroelectric infrared detectors, piezoelectric micro-electromechanical systems, antireflective coatings, optical filters, conducting-, transparent conducting-, and superconducting layers, luminescent coatings, gas sensors, thin film solid-oxide fuel cells, and photoelectrocatalytic solar cells. In the appendix detailed “cooking recipes” for selected material systems are offered.


Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films

Crystal Structure,Electronic and Optical Properties of Epitaxial Alkaline Earth Niobate Thin Films
Author: Dongyang Wan
Publisher: Springer
Total Pages: 133
Release: 2017-09-18
Genre: Science
ISBN: 331965912X

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This impressive thesis offers a comprehensive scientific study of the alkaline earth niobates and describes their nonlinear optical properties for the first time. It explores the crystal structure, electrical properties, optical absorption properties, hot carrier dynamics, nonlinear optical property and strain-induced metal to insulator transition of alkaline earth niobates using advanced experimental techniques. These alkaline earth niobates can have a strong plasmon resonance in the visible range due to their large carrier density, and this unique property gives rise to the emergent phenomenon of photocatalysis and nonlinear optical properties. This series of intrinsic plasmonic materials based on niobates, can be used as a photocatalyst to split water under sunlight, a novel saturable absorber in the high-power ultrashort pulsed laser system, and as a sensor in microelectromechanical systems.