Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Proceedings Of The Symposium On High Voltage And Smart Power Ics PDF full book. Access full book title Proceedings Of The Symposium On High Voltage And Smart Power Ics.
| Author | : Muhammed Ayman Shibib |
| Publisher | : |
| Total Pages | : 558 |
| Release | : 1989 |
| Genre | : High voltages |
| ISBN | : |
| Author | : Electrochemical Society. Electronics Division. Dielectrics Division. Insulation Division |
| Publisher | : |
| Total Pages | : |
| Release | : 1989 |
| Genre | : |
| ISBN | : |
| Author | : Peter W. Shackle |
| Publisher | : |
| Total Pages | : 356 |
| Release | : 1987 |
| Genre | : |
| ISBN | : |
| Author | : Peter W. Shackle |
| Publisher | : |
| Total Pages | : 372 |
| Release | : 1987 |
| Genre | : Electronic circuit design |
| ISBN | : |
| Author | : Bruno Murari |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 598 |
| Release | : 2002-06-13 |
| Genre | : Design |
| ISBN | : 9783540432388 |
This book provides a survey of the state of the art of technology and future trends in the new family of Smart Power ICs and describes design and applications in a variety of fields ranging from automotive to telecommunications, reliability evaluation and qualification procedures. The book is a valuable source of information and reference for both power IC design specialists and to all those concerned with applications, the development of digital circuits and with system architecture.
| Author | : Pietro Buccella |
| Publisher | : Springer |
| Total Pages | : 195 |
| Release | : 2018-03-14 |
| Genre | : Technology & Engineering |
| ISBN | : 3319743821 |
This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.
| Author | : |
| Publisher | : |
| Total Pages | : 420 |
| Release | : 2005 |
| Genre | : Integrated circuits |
| ISBN | : |
| Author | : Electrochemical Society. Electronics and Dielectrics and Insulation Divisions |
| Publisher | : |
| Total Pages | : |
| Release | : 1987 |
| Genre | : |
| ISBN | : |
| Author | : Stephen J. Gaul |
| Publisher | : John Wiley & Sons |
| Total Pages | : 404 |
| Release | : 2019-12-31 |
| Genre | : Technology & Engineering |
| ISBN | : 1119966345 |
A practical guide to the effects of radiation on semiconductor components of electronic systems, and techniques for the designing, laying out, and testing of hardened integrated circuits This book teaches the fundamentals of radiation environments and their effects on electronic components, as well as how to design, lay out, and test cost-effective hardened semiconductor chips not only for today’s space systems but for commercial terrestrial applications as well. It provides a historical perspective, the fundamental science of radiation, and the basics of semiconductors, as well as radiation-induced failure mechanisms in semiconductor chips. Integrated Circuits Design for Radiation Environments starts by introducing readers to semiconductors and radiation environments (including space, atmospheric, and terrestrial environments) followed by circuit design and layout. The book introduces radiation effects phenomena including single-event effects, total ionizing dose damage and displacement damage) and shows how technological solutions can address both phenomena. Describes the fundamentals of radiation environments and their effects on electronic components Teaches readers how to design, lay out and test cost-effective hardened semiconductor chips for space systems and commercial terrestrial applications Covers natural and man-made radiation environments, space systems and commercial terrestrial applications Provides up-to-date coverage of state-of-the-art of radiation hardening technology in one concise volume Includes questions and answers for the reader to test their knowledge Integrated Circuits Design for Radiation Environments will appeal to researchers and product developers in the semiconductor, space, and defense industries, as well as electronic engineers in the medical field. The book is also helpful for system, layout, process, device, reliability, applications, ESD, latchup and circuit design semiconductor engineers, along with anyone involved in micro-electronics used in harsh environments.
| Author | : Steven H. Voldman |
| Publisher | : John Wiley & Sons |
| Total Pages | : 411 |
| Release | : 2009-07-01 |
| Genre | : Technology & Engineering |
| ISBN | : 0470747269 |
Electrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit methodology. Look inside for extensive coverage on: failure analysis tools, EOS and ESD failure sources and failure models of semiconductor technology, and how to use failure analysis to design more robust semiconductor components and systems; electro-thermal models and technologies; the state-of-the-art technologies discussed include CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, gallium arsenide (GaAs), gallium nitride (GaN), magneto-resistive (MR) , giant magneto-resistors (GMR), tunneling magneto-resistor (TMR), devices; micro electro-mechanical (MEM) systems, and photo-masks and reticles; practical methods to use failure analysis for the understanding of ESD circuit operation, temperature analysis, power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics, (connecting the theoretical to the practical analysis); the failure of each key element of a technology from passives, active elements to the circuit, sub-system to package, highlighted by case studies of the elements, circuits and system-on-chip (SOC) in today’s products. ESD: Failure Mechanisms and Models is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic era.
