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Probabilistic Simulation for Reliability Analysis of VLSI Circuits

Probabilistic Simulation for Reliability Analysis of VLSI Circuits
Author: Farid Nasri Najm
Publisher:
Total Pages: 190
Release: 1989
Genre:
ISBN:

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This thesis presents a new technique for simulating integrated circuits, called probabilistic simulation. Using this technique, statistical descriptions of the voltage waveforms at the circuit primary inputs are used to derive corresponding statistical descriptions of the internal voltages and currents. To illustrate its utility, we use this approach to analyze integrated circuit reliability. Specifically, we focus on the problem of predicting the susceptibility of a given design to electromigration failures. We show that the median time-to-failure (MTF), due to electromigration, can be related to a stochastic model of the power supply and ground currents. Most of the thesis is then devoted to explaining the probabilistic simulation technique, adapted to CMOS VLSI digital circuits, and how it can be used to derive the required statistical descriptions of the current. This approach has been implemented in the program CREST, and has shown excellent accuracy and dramatic speedups compared to traditional approaches. We describe the probabilistic simulation technique and its implementation, and present the results of CREST runs on a variety of circuits.


Reliability-centric Probabilistic Analysis of VLSI Circuits

Reliability-centric Probabilistic Analysis of VLSI Circuits
Author: Thara Rejimon
Publisher:
Total Pages:
Release: 2006
Genre:
ISBN:

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ABSTRACT: Reliability is one of the most serious issues confronted by microelectronics industry as feature sizes scale down from deep submicron to sub-100-nanometer and nanometer regime. Due to processing defects and increased noise effects, it is almost impractical to come up with error-free circuits. As we move beyond 22nm, devices will be operating very close to their thermal limit making the gates error-prone and every gate will have a finite propensity of providing erroneous outputs. Additional factors increasing the erroneous behaviors are low operating voltages and extremely high frequencies. These types of errors are not captured by current defect and fault tolerant mechanisms as they might not be present during the testing and reconfiguration. Hence Reliability-centric CAD analysis tool is becoming more essential not only to combat defect and hard faults but also errors that are transient and probabilistic in nature. In this dissertation, we address three broad categories of errors. First, we focus on random pattern testability of logic circuits with respect to hard or permanent faults. Second, we model the effect of single-event-upset (SEU) at an internal node to primary outputs. We capture the temporal nature of SEUs by adding timing information to our model. Finally, we model the dynamic error in nano-domain computing, where reliable computation has to be achieved with "systemic" unreliable devices, thus making the entire computation process probabilistic rather than deterministic in nature. Our central theoretical scheme relies on Bayesian Belief networks that are compact efficient models representing joint probability distribution in a minimal graphical structure that not only uses conditional independencies to model the underlying probabilistic dependence but also uses them for computational advantage. We used both exact and approximate inference which has let us achieve order of magnitude improvements in both accuracy and speed and have enabled us to study larger benchmarks than the state-of-the-art. We are also able to study error sensitivities, explore design space, and characterize the input space with respect to errors and finally, evaluate the effect of redundancy schemes.


Soft Error Reliability of VLSI Circuits

Soft Error Reliability of VLSI Circuits
Author: Behnam Ghavami
Publisher: Springer Nature
Total Pages: 114
Release: 2020-10-13
Genre: Technology & Engineering
ISBN: 3030516105

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This book is intended for readers who are interested in the design of robust and reliable electronic digital systems. The authors cover emerging trends in design of today’s reliable electronic systems which are applicable to safety-critical applications, such as automotive or healthcare electronic systems. The emphasis is on modeling approaches and algorithms for analysis and mitigation of soft errors in nano-scale CMOS digital circuits, using techniques that are the cornerstone of Computer Aided Design (CAD) of reliable VLSI circuits. The authors introduce software tools for analysis and mitigation of soft errors in electronic systems, which can be integrated easily with design flows. In addition to discussing soft error aware analysis techniques for combinational logic, the authors also describe new soft error mitigation strategies targeting commercial digital circuits. Coverage includes novel Soft Error Rate (SER) analysis techniques such as process variation aware SER estimation and GPU accelerated SER analysis techniques, in addition to SER reduction methods such as gate sizing and logic restructuring based SER techniques.


Hot-Carrier Reliability of MOS VLSI Circuits

Hot-Carrier Reliability of MOS VLSI Circuits
Author: Yusuf Leblebici
Publisher: Springer Science & Business Media
Total Pages: 242
Release: 1993-06-30
Genre: Technology & Engineering
ISBN: 9780792393528

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As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.


Statistical Performance Analysis and Modeling Techniques for Nanometer VLSI Designs

Statistical Performance Analysis and Modeling Techniques for Nanometer VLSI Designs
Author: Ruijing Shen
Publisher: Springer Science & Business Media
Total Pages: 326
Release: 2014-07-08
Genre: Technology & Engineering
ISBN: 1461407885

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Since process variation and chip performance uncertainties have become more pronounced as technologies scale down into the nanometer regime, accurate and efficient modeling or characterization of variations from the device to the architecture level have become imperative for the successful design of VLSI chips. This book provides readers with tools for variation-aware design methodologies and computer-aided design (CAD) of VLSI systems, in the presence of process variations at the nanometer scale. It presents the latest developments for modeling and analysis, with a focus on statistical interconnect modeling, statistical parasitic extractions, statistical full-chip leakage and dynamic power analysis considering spatial correlations, statistical analysis and modeling for large global interconnects and analog/mixed-signal circuits. Provides readers with timely, systematic and comprehensive treatments of statistical modeling and analysis of VLSI systems with a focus on interconnects, on-chip power grids and clock networks, and analog/mixed-signal circuits; Helps chip designers understand the potential and limitations of their design tools, improving their design productivity; Presents analysis of each algorithm with practical applications in the context of real circuit design; Includes numerical examples for the quantitative analysis and evaluation of algorithms presented. Provides readers with timely, systematic and comprehensive treatments of statistical modeling and analysis of VLSI systems with a focus on interconnects, on-chip power grids and clock networks, and analog/mixed-signal circuits; Helps chip designers understand the potential and limitations of their design tools, improving their design productivity; Presents analysis of each algorithm with practical applications in the context of real circuit design; Includes numerical examples for the quantitative analysis and evaluation of algorithms presented.


VLSI Design for Reliability-Current Density

VLSI Design for Reliability-Current Density
Author:
Publisher:
Total Pages: 26
Release: 1993
Genre:
ISBN:

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This effort emphasizes the computation of the average and variance current density waveforms in the metal buses for estimating the MTF for electromigration effects. That effort is composed of two parts: The probabilistic simulation methods and software for computing the statistics of the current waveform at contact points to the buses; and the accurate extraction of the equivalent RC model of the bus for analyzing the bus currents. In addition, probabilistic methods have been applied to the calculation of the hot electron degradation in digital CMOS circuits, and the problem of estimating the maximum current (as opposed to the average) in the bus for worst case voltage drop analysis.