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Positron Annihilation in Semiconductors

Positron Annihilation in Semiconductors
Author: Reinhard Krause-Rehberg
Publisher: Springer Science & Business Media
Total Pages: 408
Release: 1999
Genre: Science
ISBN: 9783540643715

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This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.


Positron Spectroscopy of Solids

Positron Spectroscopy of Solids
Author: Alfredo Dupasquier
Publisher: IOS Press
Total Pages: 830
Release: 1995
Genre: Electronic structure
ISBN: 9789051992038

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The lifetime of a positron inside a solid is normally less than a fraction of nanosecond. This is a very short time on a human scale, but is long enough to enable the positron to visit an extended region of the material, and to sense the atomic and electronic structure of the environment. Thus, we can inject a positron in a sample to draw from it some signal giving us information on the microscopic properties of the material. This idea has been successfully developed in a number of positron-based techniques of physical analysis, with resolution in energy, momentum, or position. The complex of these techniques is what we call now positron spectroscopy of solids. The field of application of the positron spectroscopy extends from advanced problems of solid-state physics to industrial applications in the area of characterization of high-tech materials. This volume focuses the attention on the physics that can be learned from positron-based methods, but also frames those methods in a wider context including other experimental approaches. It can be considered as a textbook on positron spectroscopy of solids, the sort of book that the newcomer takes for his approach to this field, but also as a useful research tool for the expert.


Application of Positron Annihilation Spectroscopy Studies of Bismuth and Subsurface Zone Induced by Sliding

Application of Positron Annihilation Spectroscopy Studies of Bismuth and Subsurface Zone Induced by Sliding
Author: Jerzy Dryzek
Publisher:
Total Pages:
Release: 2018
Genre: Technology
ISBN:

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The positron annihilation, experimental and theoretical results obtained for bismuth are presented, mainly concerning the open volume defects created during compression and dry sliding. Positron lifetime in vacancy clusters increases with the size of the cluster; however, it saturates at the value of about 0.42 ns already for six vacancies in a cluster. Similar values were resolved in the positron lifetime spectra of bismuth samples exposed to dry sliding. Detection of the subsurface zone in bismuth exposed to dry sliding reveals exponential decay of vacancy clusters concentration with the depth increase from the worn surface. The high strain of about 70% was evaluated in the layer adjoined the worn surface The temperature of recrystallization obtained from the isochronal measurements of annihilation line shape parameter was equal about 90°C, and the activation energy for grain migration is about 0.84 ± 0.11 eV.


Positron Annihilation

Positron Annihilation
Author: L. Dorikens-Vanpraet
Publisher:
Total Pages: 1038
Release: 1989
Genre: Science
ISBN:

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Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology
Author:
Publisher: Newnes
Total Pages: 3572
Release: 2011-01-28
Genre: Science
ISBN: 0080932282

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Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts


Positron Annihilation ICPA-10

Positron Annihilation ICPA-10
Author: Yuan-Jin He
Publisher:
Total Pages: 682
Release: 1995
Genre: Science
ISBN:

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Positron Annihilation - ICPA-10 presents new results and ideas of researchers who seek more profound understanding of the nature of positron annihilation. All these scientific and technological thoughts are included in these two-volume proceedings, which contain 7 review talks, 203 contributed papers (among them, 20 are invited), and 3 summary talks. The volume is complete with keyword and author indices.


Positron Beams And Their Applications

Positron Beams And Their Applications
Author: Paul G Coleman
Publisher: World Scientific
Total Pages: 348
Release: 2000-01-22
Genre: Science
ISBN: 9814496383

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This book provides a coherent and comprehensive overview of the generation and application of mono-energetic positron beams. It has been written by acknowledged experts, at a level accessible to graduate students working, or planning to work, with positron beams, and to scientists in other areas who want to know something about the field.The book begins with a brief historical introduction and an overview of how positron beams are generated and transported. A description of the fate of slow positrons in gaseous and condensed matter, with reference to many of the fundamental measurements made possible by the advent of positron beams, is followed by a discussion on applications in the study of solid surfaces, defect profiling in subsurface regions, interfaces and thin films, and the probing of bulk properties in novel ways. The book ends with a look at the future, considering the prospects for intense positron beams and their potential for further research.


Charged Semiconductor Defects

Charged Semiconductor Defects
Author: Edmund G. Seebauer
Publisher: Springer Science & Business Media
Total Pages: 304
Release: 2008-11-14
Genre: Science
ISBN: 1848820593

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Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.