Physics Of High Speed Transistors PDF Download
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Author | : Juras Pozela |
Publisher | : Springer Science & Business Media |
Total Pages | : 351 |
Release | : 2013-06-29 |
Genre | : Science |
ISBN | : 1489912428 |
Download Physics of High-Speed Transistors Book in PDF, ePub and Kindle
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Author | : Cliff Orori Mosiori |
Publisher | : Anchor Academic Publishing (aap_verlag) |
Total Pages | : 390 |
Release | : 2015-05-26 |
Genre | : Science |
ISBN | : 3954899329 |
Download High Speed Semiconductor Physics. Theoretical Approaches and Device Physics Book in PDF, ePub and Kindle
Solid state physics is a fascinating sub-genre of condensed matter physics - though some graduate students consider it a very boring and tedious subject area in Physics and others even call it a “squalid state”. Topics covered in this book are built on standard solid state physics references available in most online libraries or in other books on solid state physics. The complexity of high speed semiconductor physics and related devices arose from condensed solid state matter. The content covered in this book gives a deep coverage on some topics or sections that may be covered only superficially in other literature. Therefore, these topics are likely to differ a great deal from what is deemed important elsewhere in other books or available literature. There are many extremely good books on solid-state physics and condensed matter physics but very few of these books are restricted to high speed semiconductor physic though. Chapter one covers the general semiconductor qualities that make high speed semiconductor devices effect and includes the theory of crystals, diffusion and ist mechanisms, while chapter two covers solid state materials, material processing for high speed semiconductor devices and an introduction to quantum theory for materials in relation to density of states of the radiation for a black body and ist radiation properties. Chapter three discuss high speed semiconductor energy band theory, energy bands in general solid semiconductor materials, the Debye model, the Einstein model the Debye model and semiconductor transport carriers in 3D semiconductors while chapter four discuss effect of external force on current flow based on the concept of holes valence band, and lattice scattering in high speed devices. Chapter five briefly describes solid state thermoelectric fundamentals, thermoelectric material and thermoelectric theory of solids in lattice and phonons while chapter six scattering in high field effect in semiconductors in inter-valley electron scattering and the associated Fermi Dirac statistics and Maxwell-Boltzmann approximation on their carrier concentration variation with energy in extrinsic doping chapter seven covers p-n junction diodes, varactor diode, pin diode Schottky diode and their transient response of diode in multi-valley semiconductors. Chapter eight discusses high speed metal semiconductor field effect transistors.
Author | : H. Beneking |
Publisher | : Springer Science & Business Media |
Total Pages | : 276 |
Release | : 1994-09-30 |
Genre | : Technology & Engineering |
ISBN | : 9780412562204 |
Download High Speed Semiconductor Devices Book in PDF, ePub and Kindle
High Speed Semiconductor Devices is the first textbook to focus on this topic. It gives a comprehensive introduction suitable for advanced students of electrical engineering and physics. It is practically oriented considering both physical limits and technical feasibility. It is illustrated with extensive exercises, full solutions and worked examples that give practical insight to and extend the treatment of the text.
Author | : John. J. Sparkes |
Publisher | : Elsevier |
Total Pages | : 261 |
Release | : 2016-05-13 |
Genre | : Technology & Engineering |
ISBN | : 1483149072 |
Download Junction Transistors Book in PDF, ePub and Kindle
Junction Transistors explains the operation and characterization of junction transistors to a point from which detailed circuit analysis and design can be undertaken. This book highlights three features. First, this text analyzes the behavior of semiconductors, pn junctions, and all types of bipolar transistors from the standpoint of classical physics. The validity of this approach and the link with quantum physics is discussed in an appendix. Second, the high-speed operation of transistors is analyzed and explained in terms of base charge. Finally, the analysis of transistor behavior in terms of the movements of holes and electrons can only be carried out explicitly with the aid of simplifying assumptions, not all of which can be fully justified. In this selection, an attempt has been made to justify these assumptions wherever possible, to show where they break down, and to remove the assumptions altogether in one or two instances and obtain more rigorous solutions. This publication provides material of interest not only to undergraduates but also to those more familiar with the properties and use of transistors.
Author | : |
Publisher | : |
Total Pages | : |
Release | : 1910 |
Genre | : |
ISBN | : |
Download Physics of Future Ultra High Speed Transistors - Part 1: HBT. Book in PDF, ePub and Kindle
An overview about current status of SiGe-HBT production is given. Advanced SiGe-HBTs are predicted to reach in near future fT=200 GHz. Design examples are given.
Author | : Patrick Roblin |
Publisher | : Cambridge University Press |
Total Pages | : 726 |
Release | : 2002-03-07 |
Genre | : Technology & Engineering |
ISBN | : 1139437461 |
Download High-Speed Heterostructure Devices Book in PDF, ePub and Kindle
Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.
Author | : Mark Rodwell |
Publisher | : World Scientific |
Total Pages | : 372 |
Release | : 2001-04-24 |
Genre | : Technology & Engineering |
ISBN | : 9814490938 |
Download High Speed Integrated Circuit Technology - Towards 100 Ghz Logic Book in PDF, ePub and Kindle
This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology.
Author | : Mark J. W. Rodwell |
Publisher | : World Scientific |
Total Pages | : 374 |
Release | : 2001 |
Genre | : Technology & Engineering |
ISBN | : 9789812810014 |
Download High-speed Integrated Circuit Technology Book in PDF, ePub and Kindle
This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.
Author | : D. Nirmal |
Publisher | : CRC Press |
Total Pages | : 446 |
Release | : 2019-05-14 |
Genre | : Science |
ISBN | : 0429862520 |
Download Handbook for III-V High Electron Mobility Transistor Technologies Book in PDF, ePub and Kindle
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author | : |
Publisher | : Academic Press |
Total Pages | : 481 |
Release | : 1994-07-06 |
Genre | : Technology & Engineering |
ISBN | : 0080864384 |
Download High Speed Heterostructure Devices Book in PDF, ePub and Kindle
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed Offers a complete, three-chapter review of resonant tunneling Provides an emphasis on circuits as well as devices