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Physics and Chemistry of III-V Compound Semiconductor Interfaces

Physics and Chemistry of III-V Compound Semiconductor Interfaces
Author: Carl Wilmsen
Publisher: Springer Science & Business Media
Total Pages: 472
Release: 2013-06-29
Genre: Science
ISBN: 1468448358

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The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.


III–V Compound Semiconductors and Devices

III–V Compound Semiconductors and Devices
Author: Keh Yung Cheng
Publisher: Springer Nature
Total Pages: 537
Release: 2020-11-08
Genre: Technology & Engineering
ISBN: 3030519031

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This textbook gives a complete and fundamental introduction to the properties of III-V compound semiconductor devices, highlighting the theoretical and practical aspects of their device physics. Beginning with an introduction to the basics of semiconductor physics, it presents an overview of the physics and preparation of compound semiconductor materials, as well as a detailed look at the electrical and optical properties of compound semiconductor heterostructures. The book concludes with chapters dedicated to a number of heterostructure electronic and photonic devices, including the high-electron-mobility transistor, the heterojunction bipolar transistor, lasers, unipolar photonic devices, and integrated optoelectronic devices. Featuring chapter-end problems, suggested references for further reading, as well as clear, didactic schematics accompanied by six information-rich appendices, this textbook is ideal for graduate students in the areas of semiconductor physics or electrical engineering. In addition, up-to-date results from published research make this textbook especially well-suited as a self-study and reference guide for engineers and researchers in related industries.


III-V Compound Semiconductors

III-V Compound Semiconductors
Author: Tingkai Li
Publisher: CRC Press
Total Pages: 588
Release: 2016-04-19
Genre: Science
ISBN: 1439815232

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Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more


Semiconductor Surfaces and Interfaces

Semiconductor Surfaces and Interfaces
Author: Winfried Mönch
Publisher: Springer Science & Business Media
Total Pages: 455
Release: 2013-04-17
Genre: Technology & Engineering
ISBN: 3662031345

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Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-included surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, results of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.


Proceedings of the 5th Annual Conference on the Physics of Compound Semiconductor Interfaces, 17-20 January 1978, Davidson Conference Center, University of Southern California, University Park, Los Angeles, California

Proceedings of the 5th Annual Conference on the Physics of Compound Semiconductor Interfaces, 17-20 January 1978, Davidson Conference Center, University of Southern California, University Park, Los Angeles, California
Author:
Publisher:
Total Pages: 336
Release: 1978
Genre: Semiconductors
ISBN:

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Semiconductor Surfaces and Interfaces

Semiconductor Surfaces and Interfaces
Author: Winfried Mönch
Publisher: Springer
Total Pages: 390
Release: 1993
Genre: Science
ISBN:

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Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.


Fundamentals of III-V Semiconductor MOSFETs

Fundamentals of III-V Semiconductor MOSFETs
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
Total Pages: 451
Release: 2010-03-16
Genre: Technology & Engineering
ISBN: 1441915478

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Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.


Semiconductor Technologies

Semiconductor Technologies
Author: Jan Grym
Publisher: BoD – Books on Demand
Total Pages: 500
Release: 2010-04-01
Genre: Technology & Engineering
ISBN: 9533070803

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Semiconductor technologies continue to evolve and amaze us. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling, design, integration, and manufacturing.