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Passivation of Amorphous Indium-gallium-zinc Oxide (IGZO) Thin-film Transistors

Passivation of Amorphous Indium-gallium-zinc Oxide (IGZO) Thin-film Transistors
Author: Nathaniel Walsh
Publisher:
Total Pages: 90
Release: 2014
Genre: Integrated circuits
ISBN:
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"Thin-film transistors (TFTs) with channel materials made out of hydrogenated amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) have been extensively investigated. Amorphous silicon continues to dominate the large-format display technology; however newer technologies demand a higher performance TFT which a-Si:H cannot deliver due to its low electron mobility, μn ~ 1 cm2/V*s. Metal-oxide materials such as Indium-Gallium-Zinc Oxide (IGZO) have demonstrated semiconductor properties, and are candidates to replace a Si:H for TFT backplane technologies. This work involves the fabrication and characterization of TFTs utilizing a-IGZO deposited by RF sputtering. An overview of the process details and results from recently fabricated IGZO TFTs following designed experiments are presented, followed by analysis of electrical results. The investigated process variables were the thickness of the IGZO channel material, passivation layer material, and annealing conditions. The use of electron-beam deposited Aluminum oxide (alumina or Al2O3) as back-channel passivation material resulted in improved device stability; however ID VG transfer characteristics revealed the influence of back-channel interface traps. Results indicate that an interaction effect between the annealing condition (time/temperature) and the IGZO thickness on the electrical behavior of alumina-passivated devices may be significant. A device model implementing fixed charge and donor-like interface traps that are consistent with oxygen vacancies (OV) resulted in a reasonable match to measured characteristics. Modified annealing conditions have resulted in a reduction of back-channel interface traps, with levels comparable to devices fabricated without the addition of passivation material."--Abstract.

Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors

Composition Engineering for Solution-Processed Gallium-Rich Indium-Gallium-Zinc-Oxide Thin Film Transistors
Author: Isaac Caleb Wang
Publisher:
Total Pages: 60
Release: 2018
Genre:
ISBN:
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Metal oxides have risen to prominence in recent years as a promising active layer for thin film transistors (TFTs). One of the main reasons for this has been its value in display technology. Conventionally, displays have relied on amorphous hydrogenated silicon (a-Si:H) TFTs but the demand for large area displays with high resolution, fast response time, low power consumption and compatibility with integrated driving circuits have prompted research into other semiconducting materials. As a result, metal oxides have become major prospects to replace a-Si:H with their high-performance electrical characteristics and simplicity of processing, making them valuable switching elements in display technology. Particularly, quaternary metal oxides such as the amorphous Indium-Gallium-Zinc-Oxide (IGZO) have demonstrated extremely high performances as TFTs, prompting extensive research in the field. The conventional method of producing metal oxide thin films has been through vacuum deposition methods such as sputtering. However, for large area applications these vacuum deposition methods face inherent limitations which prevent easy application and device fabrication. Facing these restrictions, solution-processing has become a popularly researched alternative in producing metal oxide thin films due to their simple processing requirements, low cost, and ability to be applied over large areas. In solution-processed IGZO, there have been a couple approaches to improve device performance and stability as well as simplify processing. In this work, we produce a gallium-rich 2:2:1 IGZO TFT using solution processes and study its electrical characteristics and stability. In this paper, we demonstrate a working solution-processed gallium-rich 2:2:1 IGZO TFT and compare it to a solution-processed indium-rich device to quantify its stability and performance. Through this work, we show that solution-processing is a viable fabrication method for gallium-rich IGZO, which can be a high-stability alternative to other compositions of IGZO devices.

Amorphous Oxide Semiconductors

Amorphous Oxide Semiconductors
Author: Hideo Hosono
Publisher: John Wiley & Sons
Total Pages: 644
Release: 2022-05-17
Genre: Technology & Engineering
ISBN: 1119715652
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AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Engineering SiO2 Passivated Indium-gallium-zinc-oxide TFTs for Improvement in Channel Control

Engineering SiO2 Passivated Indium-gallium-zinc-oxide TFTs for Improvement in Channel Control
Author: Nicholas R. Edwards
Publisher:
Total Pages: 208
Release: 2016
Genre: Integrated circuits
ISBN:
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"The performance of Indium Gallium Zinc Oxide (IGZO) Thin-Film Transistors (TFTs) has improved significantly in recent years; however, device stability still remains a significant issue. In bottom-gate TFTs a difficult challenge is the lack of gate control on the back-channel region, resulting in distortion in ID - VGS characteristics. In this work a bottom-gate TFT process was established using SiO2 as a back-channel passivation layer. The process was modified with options to implement TG (TG) and Double-Gate (DG) configurations. TFTs were fabricated utilizing a SiO2 layer deposited shortly after the IGZO sputter process, followed by an oxidizing ambient anneal treatment. The process supports a low-defect IGZO interface, with TG and DG configurations demonstrating improvements in channel control compared to a traditional bottom-gate TFT. Electrical characteristics from each process treatment and gate configuration where then compared. A SPICE level 2 compatible IGZO TFT model was developed, with extracted parameter values providing a quantitative measure of device operation. Measured characteristics were also used to develop arerefined material and device model for TCAD simulation."--Abstract.