Optoelectronic Devices Iii Nitrides PDF Download
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Author | : M Razeghi |
Publisher | : Elsevier |
Total Pages | : 602 |
Release | : 2004 |
Genre | : Science |
ISBN | : 9780080444260 |
Download Optoelectronic Devices Book in PDF, ePub and Kindle
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author | : |
Publisher | : Academic Press |
Total Pages | : 490 |
Release | : 2017-01-05 |
Genre | : Technology & Engineering |
ISBN | : 012809723X |
Download III-Nitride Semiconductor Optoelectronics Book in PDF, ePub and Kindle
III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Author | : Hongxing Jiang |
Publisher | : CRC Press |
Total Pages | : 410 |
Release | : 2002-07-26 |
Genre | : Technology & Engineering |
ISBN | : 9781560329732 |
Download III-Nitride Semiconductors Book in PDF, ePub and Kindle
This second part presents a comprehensive overview of fundamental optical properties of the III Nitride Semiconductor. All optoelectronic applications based on III-nitrides are due to their unique optical properties and characterizations of III-nitrides. Much information, which is critical to the design and improvement of optoelectronic devices based on III-nitrides has been obtained in the last several years. This is the second of a two part Volume in the seriesOptoelectronic Properties of Semiconductors and Superlattices. Part II consists of chapters with emphasis on the optical spectroscopy of highly excited group III-nitrides, theoretical calculations and experimental measurements of optical constants of III-nitrides. The remaining five chapters focus on the relationships and properties of GaN and InGaN as relating to III Nitrides. This unique volume provides a comprehensive review and introduction of the defects and structural properties of GaN and related compounds for newcomers to the field and will be a stimulus to further advances for experienced researchers. The chapters contained in this volume constitutes a representative sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author | : Mohamed Henini |
Publisher | : Elsevier |
Total Pages | : 578 |
Release | : 2004-12-17 |
Genre | : Science |
ISBN | : 0080538118 |
Download Optoelectronic Devices: III Nitrides Book in PDF, ePub and Kindle
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author | : Fatih Akyol |
Publisher | : |
Total Pages | : 45 |
Release | : 2011 |
Genre | : |
ISBN | : |
Download N-Polar III-Nitride Optoelectronic Devices Book in PDF, ePub and Kindle
Abstract: III-Nitride semiconductors have a tunable direct band gap starting from 0.7 to 6.2 eV, which makes them one of the most useful material systems especially for optoelectronic applications. Regarding to the solar cell applications, the highest efficiencies have been reported by using InGaP/(In)GaAs/Ge multi-junction solar cells. Since this material system is limited with a widest applicable band gap for InGaP around 1.86 eV, highest solar cell efficiencies has been limited by lack of solar cells having a band gap around 2.3 eV. In this research, 2.3 eV InGaN p-i-n solar cells has been simulated and shown that the optimum thickness of the intrinsic layer thickness is a strong function of minority carrier mobility and lifetime. The results indicated that efficiency of InGaN p-n junction solar cells can be enhanced ~35% by using optimized p-i-n designs. III-Nitrides have been widely used for light emitting diode (LED) applications. The researches have been conducted on devices grown various crystal planes including c- (Ga-polar), semi-polar and non-polar planes. However, based on our knowledge, the N-polar orientation of c-plane has not been studied both theoretically and experimentally. Thus, in this report, the Silvaco Atlas simulations have been carried out for both Ga-polar and N-polar single quantum well blue LEDs. The results have pointed out that N-polar LEDs show much less electron and hole overflow current with ~ 1V less turn-on voltage operation compared to Ga-polar LEDs. In the experimental part, the first N-polar green led grown by molecular beam epitaxy (MBE) has been demonstrated. The device showed peak emission wavelengths varying from 564.5 to 540 nm. The full width at half-maximum reduced from 74 to 63 nm as the drive current was increased to 180 A/cm2.
Author | : M.O. Manasreh |
Publisher | : Elsevier |
Total Pages | : 463 |
Release | : 2000-12-06 |
Genre | : Science |
ISBN | : 0080534449 |
Download III-Nitride Semiconductors Book in PDF, ePub and Kindle
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Author | : Fabrizio Roccaforte |
Publisher | : John Wiley & Sons |
Total Pages | : 464 |
Release | : 2020-07-30 |
Genre | : Technology & Engineering |
ISBN | : 3527825274 |
Download Nitride Semiconductor Technology Book in PDF, ePub and Kindle
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
Author | : Kevin Peter O'Donnell |
Publisher | : Springer Science & Business Media |
Total Pages | : 366 |
Release | : 2010-06-28 |
Genre | : Science |
ISBN | : 9048128773 |
Download Rare-Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications Book in PDF, ePub and Kindle
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Author | : Zhe Chuan Feng |
Publisher | : World Scientific |
Total Pages | : 477 |
Release | : 2008 |
Genre | : Technology & Engineering |
ISBN | : 1848162235 |
Download III-nitride Devices and Nanoengineering Book in PDF, ePub and Kindle
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author | : Salih Saygi |
Publisher | : |
Total Pages | : 154 |
Release | : 2004 |
Genre | : Electronic apparatus and appliances |
ISBN | : |
Download Reliability Study of III-nitride Electronic and Optoelectronic Devices Book in PDF, ePub and Kindle