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| Author | : Zhiming Chen |
| Publisher | : |
| Total Pages | : 104 |
| Release | : 2009 |
| Genre | : |
| ISBN | : |
| Author | : Ali M. Niknejad |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 313 |
| Release | : 2008-01-03 |
| Genre | : Technology & Engineering |
| ISBN | : 0387765611 |
This book compiles and presents the research results from the past five years in mm-wave Silicon circuits. This area has received a great deal of interest from the research community including several university and research groups. The book covers device modeling, circuit building blocks, phased array systems, and antennas and packaging. It focuses on the techniques that uniquely take advantage of the scale and integration offered by silicon based technologies.
| Author | : Lei Zhou |
| Publisher | : |
| Total Pages | : 119 |
| Release | : 2010 |
| Genre | : |
| ISBN | : 9781109675092 |
Silicon-based integrated circuits used in the wireless technology have a great impact on our world. Moreover, such trend is continuing with ever-decreasing size of transistors. High speed wireless communication links are expected to become popular within most mobile devices in the next few years. On the other side, millimeter-wave (MMW) frequency has always been the terrain dominated by III-V compound semiconductor technology. However, the cost and low manufacturing yield of such systems prevent its commercialized use for new exciting applications, such as automotive intelligent system and imaging for public security and medical application. As the technology scaling in silicon, the increasing process ft and higher level of integration are promising to build lower cost, smaller sized MMW systems. This dissertation is following the goal to design and implement several prototype silicon-based integrated circuits at different technology nodes to address the key challenges faced by silicon both in circuit- and system-levels, therefore pave the path towards the fully-integrated systems for those emerging applications. A carrier-less RF-correlation-based impulse radio ultra-wideband (IR-UWB) transceiver front-end designed in 130nm CMOS process is presented. Timing synchronization and coherent demodulation are implemented directly in the RF domain. In order to solve the extremely large dynamic requirement of delay for RF synchronization, a template-based delay generation scheme is proposed and a 25ps timing resolution is achieved with a delay range of 500ps by a two-step timing synchronizer. The TRX achieves a maximum data rate of 2Gbps, while requiring only 51.5pJ/pulse in the TX mode and 72.9pJ/pulse in the RX mode. Finally a W-band receiver chipset for passive millimeter-wave imaging in a 65-nm standard CMOS technology is presented. The receiver design addresses the high 1/f noise issue in the advanced CMOS technology. An LO generation scheme is proposed to make it suitable for use in multi-pixel systems. In addition, the noise performance of the receiver is further improved by optimum biasing of transistors of the detector to achieve the highest responsivity and lowest NEP. The receiver chipset achieves a Dicke NETD of 0.52K, demonstrating the potential of CMOS for future low-cost portable passive imaging cameras.
| Author | : Vipul Jain |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 102 |
| Release | : 2012-09-27 |
| Genre | : Technology & Engineering |
| ISBN | : 1441967745 |
One of the leading causes of automobile accidents is the slow reaction of the driver while responding to a hazardous situation. State-of-the-art wireless electronics can automate several driving functions, leading to significant reduction in human error and improvement in vehicle safety. With continuous transistor scaling, silicon fabrication technology now has the potential to substantially reduce the cost of automotive radar sensors. This book bridges an existing gap between information available on dependable system/architecture design and circuit design. It provides the background of the field and detailed description of recent research and development of silicon-based radar sensors. System-level requirements and circuit topologies for radar transceivers are described in detail. Holistic approaches towards designing radar sensors are validated with several examples of highly-integrated radar ICs in silicon technologies. Circuit techniques to design millimeter-wave circuits in silicon technologies are discussed in depth.
| Author | : Chun-Cheng Wang |
| Publisher | : |
| Total Pages | : 115 |
| Release | : 2012 |
| Genre | : |
| ISBN | : 9781267256614 |
Historically, monolithic microwave integrated circuits (MMICs) have been designed using III-V semiconductor technologies, such as GaAs and InP. In recent years, the number of publications reporting silicon-based millimeter-wave (mm-wave) transmitter, receivers, and transceivers has grown steadily. For mm-wave applications including gigabit/s point-to-point links (57-64 GHz), automotive radar (77-81 GHz) and imaging (94 GHz) to reach mainstream market, the cost, size and power consumption of silicon-based solution has to be significantly below what is being achieved today using compound semiconductor technology. This dissertation focuses the effort of designing and implementing silicon-based solutions through circuit- and system-level innovation for applications in the W-band frequency band (75-110GHz), in particular, 94GHz passive imaging band. A W-band front-end receiver in 65nm CMOS based entirely on slow-wave CPW (SW-CPW) with frequency tripler as the LO is designed and measured. The receiver achieves a total gain of 35-dB, -3dB-BW of 12 GHz, a NF of 9-dB, a P1-dB of -40dBm, a low power consumption of 108mW under 1.2/0.8V. This front-end receiver chipset in conjuction with an analog back-end can be used to form a radiometer. Leveraging the work done in 65nm CMOS, the first integrated 2x2 focal-plane array (FPA) for passive imaging is implemented in a 0.18um SiGe BiCMOS process (fT/fmax=200/180GHz). The FPA incorporates four Dicke-type receivers. Each receiver employs a direct-conversion architecture consisting of an on-chip slot dipole antenna, an SPDT switch, a lower noise amplifier, a single-balanced mixer, an injection-locked frequency tripler (ILFT), a zero-IF variable gain amplifier, a power detector, an active bandpass filter and a synchronous demodulator. The LO signal is generated by a shared Ka-band PLL and distributed symmetrically to four ILFTs. This work demonstrates the highest level of integration of any silicon-based systems in the 94GHz imaging band. Finally, the main design bottleneck of any wireless transceiver system, the frequency synthesizer/phase-locked loop is investigated. Two monolithically integrated W-band frequency synthesizers are presented. Implemented in a 0.18um SiGe BiCMOS, both architectures incorporate the same 30.3-33.8GHz PLL core. One synthesizer uses an injection-locked frequency tripler (ILFT) with locking range of 92.8-98.1GHz and the other employ a harmonic-based frequency tripler (HBFT) with 3-dB bandwidth of 10.5GHz from 90.9-101.4GHz, respectively. The frequency synthesizer is suitable for integration in mm-wave phased array and multi-pixel systems such as W-band radar/imaging and 120GHz Gb/s communication.
| Author | : Eoin Carey |
| Publisher | : |
| Total Pages | : 268 |
| Release | : 2005 |
| Genre | : Integrated circuits |
| ISBN | : |
| Author | : Johann-Friedrich Luy |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 359 |
| Release | : 2013-03-07 |
| Genre | : Technology & Engineering |
| ISBN | : 3642790313 |
A description of field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are covered, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter, while two whole chapters are devoted to silicon/germanium devices. The integration of devices in monolithic circuits is explained together with advanced technologies, such as the self-mixing oscillator operation, before concluding with sensor and system applications.
| Author | : Yiming Huo |
| Publisher | : |
| Total Pages | : |
| Release | : 2017 |
| Genre | : |
| ISBN | : |
The last two decades have witnessed the CMOS processes and design techniques develop and prosper with unprecedented speed. They have been widely employed in contemporary integrated circuit (IC) commercial products resulting in highly added value. Tremendous e orts have been devoted to extend and optimize the CMOS process and its application for future wireless communication systems. Meanwhile, the last twenty years have also seen the fast booming of the wireless communication technology typically characterized by the mobile communication technology, WLAN technology, WPAN technology, etc.Nowadays, the spectral resource is getting increasingly scarce, particularly over the frequency from 0.7 to 6 GHz, whether the employed frequency band is licensed or not. To combat this dilemma, the ultra wideband (UWB) technology emerges toprovide a promising solution for short-range wireless communication while using an unlicensed wide band in an overlay manner. Another trend of obtaining more spectrum is moving upwards to higher frequency bands. The WiFi-Alliance has already developed a certi cation program of the 60-GHz band. On the other side, millimeterwave (mmWave) frequency bands such as 28-GHz, 38-GHz, and 71-GHz are likely to be licensed for next generation wireless communication networks. This new trend poses both a challenge and opportunity for the mmWave integrated circuits design.This thesis combines the state-of-the-art IC and hardware technologies and designtechniques to implement and propose UWB and 5G prototyping systems. First ofall, by giving a thorough analysis of a transmitted reference pulse cluster (TRPC)scheme and mathematical modeling, a TRPC-UWB transceiver structure is proposedand its features and speci cations are derived. Following that, the detailed design,fabrication and veri cation of the TRPC-UWB transmitter front end and widebandvoltage-controlled oscillators (VCOs) in CMOS process is presented. The TRPCUWBtransmitter demonstrates a state-of-the-art energy e ciency of 38.4 pJ/pulse.Secondly, a novel system architecture named distributed phased array based MIMO(DPA-MIMO) is proposed as a solution to overcome design challenges for the future5G cellular user equipment (UE) design. In addition, a prototyping design of on-chipmmWave antenna with radiation e ciency enhancement is presented for the IEEE802.11ad application.Furthermore, two wideband K-band VCO prototypes based on two di erent topologiesare designed and fabricated in a standard CMOS process. They both show goodperformance at center frequencies of 22.3 and 26.1 GHz. Finally, two CMOS mmWaveVCO prototypes working at the potential future 5G frequency bands are presentedwith measurement results.
| Author | : Rahul M. Kodkani |
| Publisher | : |
| Total Pages | : 124 |
| Release | : 2009 |
| Genre | : |
| ISBN | : |
This research focuses on the design of silicon based millimeterwave integrated circuits for Multi Giga bits-per-second wireless communications. The use of Active sub-harmonic Mixers(ASHM) and Passive Sub-harmonic Mixers (PSHM) for millimeterwave receivers was explored for their advantages over fundamental order mixers. A multi-phase active sub-harmonic mixer/downconverter with an on-chip integrated ring Voltage Controlled Oscillator(VCO) was designed for millimeterwave wireless systems in a in a 0.12 [mu]m SiGe BiCMOS technology. Analysis to understand the switching currents in the ASHM was carried out. Useful insight on the behavior of the ASHM was obtained from this. The downconverter exhibited state-of-the-art measured performance in terms of gain and noise figure. A 24 GHz PSHM based downconverter was designed in a in a 0.13 [mu]m CMOS technology. This topology combines the advantages of the fundamental order passive mixer such as low 1/f noise and linearity as well as those of sub-harmonic mixer such as low DC offsets due to reduced LO self-mixing. Analysis to understand the operation of the mixer was carried out. The downconverter included am active phase-splitter, a low-noise amplifier (LNA) and LO and IF buffers. Based on the PSHM topology a direct-conversion I/Q receiver was designed. It included a novel active balun with improved amplitude and phase balance. The necessary LO phases were generated using an 8-phase generator which included a quadrature VCO. The measured receiver gain is 12 dB. Noise Figure is 7.4 dB, input IIP3 is -6 dBm, and input IIP2 is 18.5 dBm. The RF and the IF sections of the chip consumes 48 mA, and the LO sections consume 40 mA from a 1.6V supply.
| Author | : Jaco du Preez |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2022 |
| Genre | : |
| ISBN | : 9783031146565 |
This book examines the critical differences between current and next-generation Si technologies (CMOS, BiCMOS and SiC) and technology platforms (e.g. system-on-chip) in mm-wave wireless applications. We provide a basic overview of the two technologies from a technical standpoint, followed by a review of the state-of-the-art of several key building blocks in wireless systems. The influences of system requirements on the choice of semiconductor technology are vital to understanding the merits of CMOS and BiCMOS devices - e.g., output power, battery life, adjacent channel interference, cost restrictions, and so forth. These requirements, in turn, affect component-level design and performance metrics of oscillators, mixers, power and low-noise amplifiers, as well as phase-locked loops and data converters. Finally, the book offers a peek into the next generation of wireless technologies such as THz -band systems and future 6G applications.
