Nanocrystalline And Amorphous Silicon Thin Film Transistors Deposited By Microwave Plasma Electron Cyclotron Resonance Chemical Vapor Deposition PDF Download
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Author | : Lihong Teng |
Publisher | : |
Total Pages | : 404 |
Release | : 2003 |
Genre | : |
ISBN | : |
Download Nanocrystalline and Amorphous Silicon Thin Film Transistors Deposited by Microwave Plasma Electron Cyclotron Resonance Chemical Vapor Deposition Book in PDF, ePub and Kindle
Author | : J. H. Jeung |
Publisher | : |
Total Pages | : 6 |
Release | : 2001 |
Genre | : |
ISBN | : |
Download Microwave Plasma CVD of Silicon Nanocrystalline and Amorphous Silicon as a Function of Deposition Conditions Book in PDF, ePub and Kindle
Using ECR-CVD (electron cyclotron resonance-chemical vapor deposition), we can make amorphous-silicon (a-Si) and nanocrystalline (nc-Si) thin films. We are looking forward to improve the photo/dark conductivity ratio (sigma(sub p)/sigma(sub d)) by measuring the photo and dark current-voltage (I-V). In the ECR deposition, there are several factors which we can control and adjust for improved results, such as the amounts of silane and argon, the vacuum, and the temperature of the substrate. These become the critical factors for ECR deposition in order to make better films. Input gases consist of Ar, 2%SiH4 in He and H2. In the process, SiH4 is decomposed into SiH(x). A residual gas analyzer (RGA) gives composition in the plasma. Because Ar possibly etches the substrate and Si is to be deposited, the best RGA signal is obtained with low Ar content. This work serves to correlate process conditions, RGA signals and electrical data. The best RGA signal occurs for 5 mTorr Ar, 60 mTorr SiH4:He, and power of 600 W. Best value of dark conductivity (Q sub d)) was 1.53 x 10(exp -9) S/cm and 1.58 x 10(exp 5) S/cm for photo conductivity (sigma (sub p)) High value of sigma(sub p) and low value of sigma(sub d) indicate material with fewer defects. Adding extra H2. improves the photo-conductivity (sigma(sub p)) Applications of these films are heterojunction solar cells and thin film transistors. The heterojunction solar cell had a structure of metal grid/500 deg. A of a Si:H/p-Si wafer/Ohmic contact. These cells gave an open circuit voltage (V) = 0.51(V) and short circuit current density (J(sub sc)) = 5.5 mA/sq cm under 50 mW/sq cm tungsten halogen lamp. Thin film transistors using nc-Si, with gate length/width (L/W) = 450/65 gave field effect mobility of 18 sq cm/V-s, and Ion/Ioff of 1.25 x 10(exp 5).
Author | : |
Publisher | : |
Total Pages | : 716 |
Release | : 2001 |
Genre | : Semiconductors |
ISBN | : |
Download Microcrystalline and Nanocrystalline Semiconductors Book in PDF, ePub and Kindle
Author | : Yue Kuo |
Publisher | : The Electrochemical Society |
Total Pages | : 424 |
Release | : 1997 |
Genre | : Technology & Engineering |
ISBN | : 9781566771733 |
Download Proceedings of the Third Symposium on Thin Film Transistor Technologies Book in PDF, ePub and Kindle
Author | : Sridhar Komarneni |
Publisher | : |
Total Pages | : 624 |
Release | : 2002-04 |
Genre | : Technology & Engineering |
ISBN | : |
Download Nanophase and Nanocomposite Materials IV: Volume 703 Book in PDF, ePub and Kindle
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author | : Leigh T. Canham |
Publisher | : |
Total Pages | : 600 |
Release | : 1999-04 |
Genre | : Technology & Engineering |
ISBN | : |
Download Microcrystalline and Nanocrystalline Semiconductors - 1998: Volume 536 Book in PDF, ePub and Kindle
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This volume was first published in 1999.
Author | : Yue Kuo |
Publisher | : Kluwer Academic Pub |
Total Pages | : 511 |
Release | : 2004 |
Genre | : Technology & Engineering |
ISBN | : 9781402075056 |
Download Thin Film Transistors: Amorphous silicon thin film transistors Book in PDF, ePub and Kindle
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Author | : Yeh-Jiun Tung |
Publisher | : |
Total Pages | : 308 |
Release | : 2001 |
Genre | : |
ISBN | : |
Download Polycrystalline Silicon Thin-film Transistor Technology for Flexible Large-area Electronics Book in PDF, ePub and Kindle
Author | : |
Publisher | : |
Total Pages | : 760 |
Release | : 2005 |
Genre | : Amorphous semiconductors |
ISBN | : |
Download Amorphous and Nanocrystalline Silicon Science and Technology ... Book in PDF, ePub and Kindle
Author | : Jarrod McDonald |
Publisher | : |
Total Pages | : 92 |
Release | : 2004 |
Genre | : |
ISBN | : |
Download The Design and Development of Nanocrystalline Silicon Thin Film Transistors Book in PDF, ePub and Kindle
This work reports on the fabrication of thin film transistor devices at low temperatures using hydrogenated-nanocrystalline silicon (nc-Si:H). Nanocrystalline silicon is a new electronic material, which is capable of being deposited at low temperatures on any substrate, and thus offers the possibility of making large area devices on flexible substrates. This work presents a design and process for fabricating 25 [mu]m length n-channel, top gate, thin film transistors. The TFTs were fabricated using hydrogenated-nanocrystalline silicon (nc-Si:H), deposited by plasma enhanced chemical vapor deposition (PECVD) over a thermally oxidized silicon wafer. The deposition was done at a temperature of 300°C. Metal layers were deposited by thermal evaporation and etching steps were done via dry etching in a reactive ion etching system and by wet etching. Silicon nitride, deposited by PECVD at 300°C, was used as the dielectric material in the TFT. MIS capacitors were made to judge the quality of the silicon nitride/nc-Si:H interface, and interface defect densities were measured using capacitance-voltage techniques. It was found that an interface defect density of approximately 4.55x1011 cm−1eV−1 was achievable with hydrogen passivation. MIM capacitors were made to determine the dielectric breakdown of the material. The silicon nitride layer broke down at an electric field of 4 MV/cm. The transistors tested have shown a threshold voltage (V[subscript TH])[nearly equal to]13.3 volts, a channel surface mobility (u)[nearly equal to].2 cm2/[V·sec] and an on-off ratio of [nearly equal to]103.