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Millimeter-wave and Terahertz Frequency Synthesis on Advanced Silicon Technology

Millimeter-wave and Terahertz Frequency Synthesis on Advanced Silicon Technology
Author: Raphael Guillaume
Publisher:
Total Pages: 0
Release: 2018
Genre:
ISBN:

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In recent years, millimeter-wave (mm-wave) and terahertz (THz) frequency bands haverevealed a great potential for many applications such as medical and biological imaging,quality control, and very-high-speed communications. The main reasons for this interestare the many interesting properties of THz and millimeter waves, such as their ability toharmlessly penetrate through matter or the broad spectrum available at these frequencies.Targeted applications require energy efficient signal sources with high power outputand, for some applications, low phase noise. In addition, the increasing demand in mmwave/THz applications requires the use of a cost-optimized, high-performance, and verylarge scale integration (VLSI) technologies, such as the 28nm CMOS FD-SOI technology.In this context, this thesis proposes an innovative solution for mm-wave and THz frequencygeneration in CMOS technology: the injection locked distributed oscillator (ILDO). Thework presented in this manuscript includes the detailed analysis of the state-of-the-artand its limitations, the detailed theoretical study of the proposed millimeter-waves bandsolution, the development of a specific design methodology in CMOS technology as well asthe design of technological demonstrators. The several 28nm FDSOI integrated distributedoscillators at 134 GHz and respectively 200 GHz have demonstrated the feasibility ofmm-wave and THz signal sources with high-energy efficiency, high output power, and lowphase noise in a VLSI CMOS technology. Finally, the injection locking capability of suchdistributed oscillators has been demonstrated experimentally paving the way for a futuresilicon-based fully integrated THz systems. The proposed circuits are as of today thehighest oscillation frequency solutions demonstrated in a 28nm CMOS Silicon technology.


mm-Wave Silicon Technology

mm-Wave Silicon Technology
Author: Ali M. Niknejad
Publisher: Springer Science & Business Media
Total Pages: 313
Release: 2008-01-03
Genre: Technology & Engineering
ISBN: 0387765611

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This book compiles and presents the research results from the past five years in mm-wave Silicon circuits. This area has received a great deal of interest from the research community including several university and research groups. The book covers device modeling, circuit building blocks, phased array systems, and antennas and packaging. It focuses on the techniques that uniquely take advantage of the scale and integration offered by silicon based technologies.


Silicon-Based Millimeter-Wave Devices

Silicon-Based Millimeter-Wave Devices
Author: Johann-Friedrich Luy
Publisher: Springer Science & Business Media
Total Pages: 359
Release: 2013-03-07
Genre: Technology & Engineering
ISBN: 3642790313

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A description of field-theoretical methods for the design and analysis of planar waveguide structures and antennas. The principles and limitations of transit-time devices with different injection mechanisms are covered, as are aspects of fabrication and characterization. The physical properties of silicon Schottky contacts and diodes are treated in a separate chapter, while two whole chapters are devoted to silicon/germanium devices. The integration of devices in monolithic circuits is explained together with advanced technologies, such as the self-mixing oscillator operation, before concluding with sensor and system applications.


Standing Wave Integrated Circuits for Power Generation, Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum

Standing Wave Integrated Circuits for Power Generation, Radiation and Beam Steering at Millimeter Wave and Terahertz Spectrum
Author: Hossein Jalili
Publisher:
Total Pages:
Release: 2019
Genre:
ISBN: 9781658416443

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The enormous potentials of millimeter wave (mm-wave) and terahertz (THz) frequency spectrum have sparked significant interest in breaking into this new frontier of technology. High-speed communication, imaging, spectroscopy and radar are just a few examples among many possible applications. Today, however, mm-wave and THz systems are mostly discrete, bulky and expensive, which significantly limits their accessibility and applications. Realization of integrated mm-wave/THz systems in low-cost and reliable silicon technologies can be a technological milestone, paving the way for tremendous opportunities both in high-tech market and academic research. This work is focused on tackling the major challenges of implementing mm-wave/THz integrated sources, including magnitude, bandwidth, radiation and beam steering of the source power. As we move to higher frequencies, the power that can be generated on chip continuously drops. Here, we have demonstrated a versatile method to maximize this power based on independent optimization of harmonic impedances. Scalable standing wave array structures are implemented based on efficient low-loss coupling schemes in order to further boost the produced power by increasing the number of contributing individual sources. Furthermore, we have presented a practical approach to maximizing radiation gain and consequently Equivalent Isotropic Radiated Power (EIRP) of the source by optimizing influential parameters of the radiation apparatus. Achieving wideband operation also becomes more challenging with increasing frequency. This is an important obstacle in our ability to take advantage of the uncongested and large available bandwidth at mm-wave/THz. We implemented standing wave oscillators and employed a varactor-less frequency tuning method to realize wideband operation. We considerably improved the bandwidth benchmark among state-of-the-art integrated radiator arrays in silicon technology. Furthermore, electronic beam steering is a crucial component of the modern wireless systems. However, realizing the necessary wide range of variable phase shift between sources is a difficult task at mm-wave/THz spectrum. Here, we have demonstrated a new phase shifting method based on combining standing and traveling waves and were able to achieve a record beam steering range among relevant published works to date. In this dissertation, we present the ideas, analysis, design methods and experimental results of four implemented prototype integrated circuits. First, a 230-GHz Voltage Controlled Oscillator (VCO) in a 65-nm CMOS technology is presented based on a coupled standing wave structure. This circuit is capable of providing high output power (3.4 dBm maximum) and wideband operation (8.3% frequency tuning range) simultaneously. Taking output power, bandwidth, power consumption and phase noise into account altogether, the circuit has a record performance figure-of-merit (FOM) compared to the state of the art. Then, a 0.34-THz 4-element scalable standing wave radiator array with 20.3 GHz (record bandwidth at the time of publication) and -10.5 dBm maximum radiated power is demonstrated, followed by a 0.34-THz wideband (15.1% frequency tuning range) and wide-angle (128° /53° range) 2D beam steering phased array, both in in 0.13μm SiGe BiCMOS. The phased array circuit has the largest bandwidth and widest steering range among integrated arrays above 300 GHz in silicon technology. Finally, a 0.46-THz 25-element scalable radiator array in a 65-nm CMOS is presented with high radiation gain through an optimized silicon lens set up. This coherent source delivers record EIRP of +19.3 dBm and 8.9% wide frequency tuning range, both largest values reported for integrated arrays above 400 GHz in silicon.


Advanced Microwave and Millimeter Wave Technologies

Advanced Microwave and Millimeter Wave Technologies
Author: Moumita Mukherjee
Publisher: BoD – Books on Demand
Total Pages: 656
Release: 2010-03-01
Genre: Technology & Engineering
ISBN: 9533070315

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This book is planned to publish with an objective to provide a state-of-the-art reference book in the areas of advanced microwave, MM-Wave and THz devices, antennas and systemtechnologies for microwave communication engineers, Scientists and post-graduate students of electrical and electronics engineering, applied physicists. This reference book is a collection of 30 Chapters characterized in 3 parts: Advanced Microwave and MM-wave devices, integrated microwave and MM-wave circuits and Antennas and advanced microwave computer techniques, focusing on simulation, theories and applications. This book provides a comprehensive overview of the components and devices used in microwave and MM-Wave circuits, including microwave transmission lines, resonators, filters, ferrite devices, solid state devices, transistor oscillators and amplifiers, directional couplers, microstripeline components, microwave detectors, mixers, converters and harmonic generators, and microwave solid-state switches, phase shifters and attenuators. Several applications area also discusses here, like consumer, industrial, biomedical, and chemical applications of microwave technology. It also covers microwave instrumentation and measurement, thermodynamics, and applications in navigation and radio communication.


Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies

Signal Generation for Millimeter Wave and THZ Applications in InP-DHBT and InP-on-BiCMOS Technologies
Author: Muhammad Maruf Hossain
Publisher: Cuvillier Verlag
Total Pages: 136
Release: 2016-10-27
Genre: Technology & Engineering
ISBN: 3736983352

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A variety of commercial and defense applications are expected to have sub-terahertz (THz) and mm-wave integrated circuits in the near future. Silicon (Si) technologies partly meet the demands but are limited in their power handling capability. III-V technologies, in particular InP, offer higher output power but fall short of their Si counterparts if it comes to integration density and complexity. Thus, research on hetero-integration of Si with InP has gained increasing interest. This work focuses on MMIC signal sources as important building blocks that are based on FBH’s 0.8 μm InP-DHBT transferred-substrate (TS) process, offering an InP-DHBT as well as an InP-on-BiCMOS version. This process is unique and provides interesting possibilities to realize integrated circuits in the frequency range between 100 GHz and more than 300 GHz. First, fundamental sources at 96 GHz and 197 GHz are presented. They deliver +9 dBm and 0 dBm output power with 25% and 0.5% overall DC-to-RF efficiency, respectively. Furthermore, 162 GHz and 270 GHz push-push sources are demonstrated utilizing an InP-on-BiCMOS process, which achieve -4.5 dBm and -9.5 dBm output power. Subsequently, multiplier-based signal sources are demonstrated including a full G-band (140-220 GHz) frequency doubler, which delivers +8.2 dBm at 180 GHz and more than +5 dBm in the range 160-200 GHz. The doubler circuit exhibits a power efficiency of 16% in this frequency range. Also, the highest frequency is reached by a wideband 328 GHz quadrupler, with -7 dBm output power at 325 GHz and 0.5% DC-to-RF efficiency. The final part is devoted to hetero-integrated circuits and the necessary design considerations. Two 250 GHz and 330 GHz sources are demonstrated that deliver -1.6 dBm and -12 dBm output power, respectively. These are the first hetero-integrated signal sources in this frequency range reported so far.


Study of Silicon Substrate Properties at Mm-wave and THz Frequencies and Their Impact on Passive and Active Devices

Study of Silicon Substrate Properties at Mm-wave and THz Frequencies and Their Impact on Passive and Active Devices
Author: Wen Shu
Publisher:
Total Pages: 282
Release: 2015
Genre: Fourier transform infrared spectroscopy
ISBN:

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Millimeter-wave (mm-wave) complementary metal-oxide semiconductor (CMOS) circuits have emerged because of improved device performance with silicon technology which realizes high level integration and low cost. Accurate substrate modeling is very important for circuit design especially at mm-wave frequencies. The Drude model can be used to capture the silicon properties at terahertz (THz) frequencies. Fourier Transform Infrared Spectroscopy (FTIR) measurement is used to confirm the necessary consideration of the Drude model for silicon substrate modeling at THz frequencies. Useful information about the silicon substrate properties at mm-wave frequencies have been obtained by using the devices built on various substrates up to sub-millimeter wave frequencies. A coplanar waveguide (CPW) transmission line is one of the widely used passive devices in mm-wave circuits. Silicon-based CPWs are designed and analyzed using electromagnetic simulation tools (HFSS and Momentum) on different resistivity silicon substrates. The silicon substrate effects are captured and visualized by the field distribution. A simple, physics-based, frequency-dependent lumped circuit is proposed to model the physical behavior of the CPWs over a broad-frequency range (up to 110 GHz), with various geometries and substrate resistivities using accurate substrate loss modeling. The transitions between three operation modes (the slow-wave mode, skin-effect mode and dielectric quasi-transverse electromagnetic (TEM) mode) are obtained smoothly with one circuit. Measured S-parameters for different geometrical CPWs are used to derive the RLGC parameters and show good agreement with the circuit model. The lumped circuit model derived from the CPWs is a unified one that can also be applied to other devices such as an inductor and transformer. New circuit models for a simple inductor and transformers are proposed based on the lumped CPW model with the same elements and equations. Measured results from simple single-layer inductors and transformers are analyzed to validate the new circuits beyond their self-resonance frequency and good agreement is obtained. Beyond passive components, the substrate network of an active device model is being studied using concepts from the unified model. Finally, a graphical calculator is developed and based on the unified model for use in the design, analysis and optimization of planar transmission lines and inductors.


State-of-the-Art of Millimeter-Wave Silicon Technology

State-of-the-Art of Millimeter-Wave Silicon Technology
Author: Jaco du Preez
Publisher:
Total Pages: 0
Release: 2022
Genre:
ISBN: 9783031146565

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This book examines the critical differences between current and next-generation Si technologies (CMOS, BiCMOS and SiC) and technology platforms (e.g. system-on-chip) in mm-wave wireless applications. We provide a basic overview of the two technologies from a technical standpoint, followed by a review of the state-of-the-art of several key building blocks in wireless systems. The influences of system requirements on the choice of semiconductor technology are vital to understanding the merits of CMOS and BiCMOS devices - e.g., output power, battery life, adjacent channel interference, cost restrictions, and so forth. These requirements, in turn, affect component-level design and performance metrics of oscillators, mixers, power and low-noise amplifiers, as well as phase-locked loops and data converters. Finally, the book offers a peek into the next generation of wireless technologies such as THz -band systems and future 6G applications.


Development of Micromachined Millimeter Wave Modules for Wireless Communication Systems

Development of Micromachined Millimeter Wave Modules for Wireless Communication Systems
Author: Yuan Li
Publisher:
Total Pages:
Release: 2010
Genre: Millimeter wave communication systems
ISBN:

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This research discusses the design, fabrication, integration, and characterization of micromachined millimeter-wave components and a signal source for THz multiplier source using the deep reactive ion etching technique. A wide range of advanced micromachined millimeter-wave components are proposed and fully validated with the measurement. These micromachined millimeter-wave passives include: the W-band straight and meander waveguides, W-band three-pole filter, waveguide hybrid and power divider, a novel CPW-to-waveguide transition and filter, and a novel cavity resonator for 60-GHz reconfigurable applications. The proposed THz multiplier source is a broadband 900-GHz silicon micromachined two-anode frequency tripler with the state-of-the-art performance. The research results enable the silicon micromachining technique to build low-loss and low-cost millimeter-wave components and THz signal sources.


Advanced Technologies for Millimeter Wave Circuits and System Integration

Advanced Technologies for Millimeter Wave Circuits and System Integration
Author: Maurizio Bozzi
Publisher: Elsevier
Total Pages: 300
Release: 2017-02-01
Genre: Technology & Engineering
ISBN: 9780124166639

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A variety of novel applications in the millimeter-wave frequency range have been developed in the last few years: for example, wireless LAN at 60 GHz, automotive radars at 77 GHz, and imaging systems at 94 GHz. The development of these applications has stimulated the implementation of a wide range of novel components and circuits operating at millimeter-wave frequencies. Both industry and academia have devoted significant effort to the development of novel technologies and efficient integration techniques, with the aim of improving the quality of millimeter-wave systems, decreasing their cost and improving their reliability. This book provides comprehensive coverage of all aspects relating to components, circuits and system integration at millimeter wave level. The book is divided into four parts: technologies for passive components; technologies and materials for active devices and circuits; complete system integration strategies; and major millimeter-wave applications. For the first time, this book offers a broad view on various mm-wave applications and advanced technologies with their relative merits, to optimize device selection, system integration and packaging for high-performance, low-cost systems. Each chapter is authored by recognized academic and industrial authorities in the field of advanced devices, components and system integration at mm-wave frequency. The book covers a wide range of technologies and topologies, evaluating their merits and offering guidance on component selection, circuit design and system integration. It describes in detail the most important mm-wave applications and design of application-specific systems. With this book you will be able to: Develop an application specific mm-wave system from concept to prototyping, through to final design, integration and testing Develop advanced capabilities and understanding to select optimum device technology for active and passive circuits Use module integration topology and technique to successfully design a compact and high performance system within a given space and financial budget Learn about the state of the art in mm-wave integration and technologies and techniques, with their relative performances, for mm-wave components, circuits and modules design, performance optimization and integrated packaging Select the proper technology for implementing mm-wave passive components and antennas Choose the correct semiconductor technology for active devices and circuits Select circuit topology, design and development for high performance active devices and integrated circuits Choose and implement the most suitable integration strategy for mm-wave modules and systems Gain a deep knowledge of major applications and research trends at mm-waves Understand the issues related to mm-wave device and circuit technologies with integration and packaging Comprehensive Reference: all aspects relating to components, circuits and system integration at the millimeter wave level.are covered Advice and guidance on component and circuit design, selection and integration State of the art knowledge: Covers major applications and current and future research trends Written by experts in the field: A range of contributors from industry and academia provide insight and the right balance of theory and application