Materials Issues And Modeling For Device Nanofabrication Volume 584 PDF Download

The exploding market of information technology requires ultra-high-speed integrated circuits, which imposes formidable challenges in terms of nanofabrication, advanced materials, atomic scale measurements and modeling. The enormous costs of next-generation lithographic machines to mass produce integrated circuits with sub-100 nm resolution justify alternative approaches where the use of advanced materials and techniques for nanofabrication including epitaxial growth, and their powerful modeling, can lead to more cost-effective strategies. This volume contains most of the papers that were presented during Symposium J, "Advanced Materials and Techniques for Nanolithography," and Symposium N, "Atomic Scale Measurements and Atomistic Models of Epitaxial Growth and Lithography," at the 1999 MRS Fall Meeting in Boston, Massachusetts. Because of the complementary nature of the two subject matters, particularly in their applicability to device nanofabrication, it was felt that a combined proceedings volume offered the best way to present the findings in a unified and comprehensive manner. The editors trust that the reader will find here a nice overview of the state of the art, both theoretical and experimental, as well as an indication of the future trends and remaining challenges in this technologically important field.