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Materials Issues and Modeling for Device Nanofabrication: Volume 584

Materials Issues and Modeling for Device Nanofabrication: Volume 584
Author: Lhadi Merhari
Publisher:
Total Pages: 368
Release: 2000-08-04
Genre: Technology & Engineering
ISBN:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Materials Issues and Modeling for Device Nanofabrication, Volume 584, Held November 29-December 2, 1999, Boston, Massachusetts, USA.

Materials Issues and Modeling for Device Nanofabrication, Volume 584, Held November 29-December 2, 1999, Boston, Massachusetts, USA.
Author:
Publisher:
Total Pages: 0
Release: 1999
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ISBN:

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The exploding market of information technology requires ultra-high-speed integrated circuits, which imposes formidable challenges in terms of nanofabrication, advanced materials, atomic scale measurements and modeling. The enormous costs of next-generation lithographic machines to mass produce integrated circuits with sub-100 nm resolution justify alternative approaches where the use of advanced materials and techniques for nanofabrication including epitaxial growth, and their powerful modeling, can lead to more cost-effective strategies. This volume contains most of the papers that were presented during Symposium J, "Advanced Materials and Techniques for Nanolithography," and Symposium N, "Atomic Scale Measurements and Atomistic Models of Epitaxial Growth and Lithography," at the 1999 MRS Fall Meeting in Boston, Massachusetts. Because of the complementary nature of the two subject matters, particularly in their applicability to device nanofabrication, it was felt that a combined proceedings volume offered the best way to present the findings in a unified and comprehensive manner. The editors trust that the reader will find here a nice overview of the state of the art, both theoretical and experimental, as well as an indication of the future trends and remaining challenges in this technologically important field.


Materials Issues and Modeling for Device Nanofabrication:

Materials Issues and Modeling for Device Nanofabrication:
Author: Lhadi Merhari
Publisher: Cambridge University Press
Total Pages: 360
Release: 2014-06-05
Genre: Technology & Engineering
ISBN: 9781107414174

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The exploding market of information technology requires ultrahigh-speed integrated circuits, which imposes formidable challenges in terms of nanofabrication, advanced materials, atomic-scale measurements and modeling. The enormous costs of next-generation lithographic machines to mass produce integrated circuits with sub-100nm resolution justify alternative approaches where the use of advanced materials and techniques for nanofabrication, including epitaxial growth and their powerful modeling, can lead to more cost-effective strategies. This book contains the proceedings of two symposia held at the 1999 MRS Fall Meeting in Boston that address these issues - Advanced Materials and Techniques for Nanolithography, and Atomic-Scale Measurements and Atomistic Models of Epitaxial Growth and Lithography. The reader will find an overview of the state of the art, both theoretical and experimental in this technologically important field. Topics include: advanced techniques for sub-100nm resolution lithography and molecular electronics; epitaxial growth and morphology; novel concepts of resists for nanolithography; atomic-scale characterization and measurement; modeling and atomistic simulations; and nanodevices and nanostructures.


Nanofabrication

Nanofabrication
Author: Maria Stepanova
Publisher: Springer Science & Business Media
Total Pages: 344
Release: 2011-11-08
Genre: Technology & Engineering
ISBN: 3709104246

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Intended to update scientists and engineers on the current state of the art in a variety of key techniques used extensively in the fabrication of structures at the nanoscale. The present work covers the essential technologies for creating sub 25 nm features lithographically, depositing layers with nanometer control, and etching patterns and structures at the nanoscale. A distinguishing feature of this book is a focus not on extension of microelectronics fabrication, but rather on techniques applicable for building NEMS, biosensors, nanomaterials, photonic crystals, and other novel devices and structures that will revolutionize society in the coming years.


Mechanics

Mechanics
Author:
Publisher:
Total Pages: 422
Release: 2001
Genre: Mechanics, Applied
ISBN:

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Nanotechnology Research Directions: IWGN Workshop Report

Nanotechnology Research Directions: IWGN Workshop Report
Author: R.S. Williams
Publisher: Springer Science & Business Media
Total Pages: 367
Release: 2013-03-09
Genre: Technology & Engineering
ISBN: 9401595763

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energy production, environmental management, transportation, communication, computation, and education. As the twenty-first century unfolds, nanotechnology's impact on the health, wealth, and security of the world's people is expected to be at least as significant as the combined influences in this century of antibiotics, the integrated circuit, and human-made polymers. Dr. Neal Lane, Advisor to the President for Science and Technology and former National Science Foundation (NSF) director, stated at a Congressional hearing in April 1998, "If I were asked for an area of science and engineering that will most likely produce the breakthroughs of tomorrow, I would point to nanoscale science and engineering. " Recognizing this potential, the White House Office of Science and Technology Policy (OSTP) and the Office of Management and Budget (OMB) have issued a joint memorandum to Federal agency heads that identifies nanotechnology as a research priority area for Federal investment in fiscal year 2001. This report charts "Nanotechnology Research Directions," as developed by the Interagency W orking Group on Nano Science, Engineering, and Technology (IWGN) of the National Science and Technology Council (NSTC). The report incorporates the views of leading experts from government, academia, and the private sector. It reflects the consensus reached at an IWGN-sponsored workshop held on January 27-29, 1999, and detailed in contributions submitted thereafter by members of the V. S. science and engineering community. (See Appendix A for a list of contributors.


Ferroelectric Thin Films VIII: Volume 596

Ferroelectric Thin Films VIII: Volume 596
Author: R. W. Schwartz
Publisher:
Total Pages: 610
Release: 2000-08-17
Genre: Technology & Engineering
ISBN:

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This book, the eighth in a popular series from MRS, features the latest technical information on ferroelectric thin films from an international mix of academia, industry and government organizations. Recent results for DRAM and FERAM devices, as well as enhancements in material performance for these applications, are presented. Significant advances in understanding leakage current, frequency dependence of the coercive field, hydrogen annealing effects, piezoelectric constants, and domain switching responses are highlighted. The development of ferroelectric thin films for piezoelectric applications are also reviewed, as are improved film-fabrication procedures including chemical vapor deposition and chemical solution deposition. Topics include: BST thin films and DRAM; integration and electrodes; Bi-based thin-film ferroelectrics; Pb-based thin-film ferroelectrics; fundamental properties of thin-film ferroelectrics; ferroelectric gate materials and devices; and piezoelectric, pyro-electric and capacitor devices and novel processing strategies.


Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures: Volume 592

Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures: Volume 592
Author: D. A. Buchanan
Publisher: Mrs Proceedings
Total Pages: 408
Release: 2000-10-17
Genre: Technology & Engineering
ISBN:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. The book, first published in 2000, includes detailed theoretical studies of the nature of SiO2 and its interface with silicon, electron paramagnetic resonance for the study of defects, electron tunneling, and band alignment among others.


Thin Films

Thin Films
Author:
Publisher:
Total Pages: 576
Release: 2000
Genre: Thin films
ISBN:

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