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Materials and Physics for Nonvolatile Memories: Volume 1160

Materials and Physics for Nonvolatile Memories: Volume 1160
Author: Yoshihisa Fujisaki
Publisher:
Total Pages: 224
Release: 2009-11-17
Genre: Technology & Engineering
ISBN:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Materials and Physics of Emerging Nonvolatile Memories: Volume 1430

Materials and Physics of Emerging Nonvolatile Memories: Volume 1430
Author: Yoshihisa Fujisaki
Publisher: Materials Research Society
Total Pages: 0
Release: 2012-08-27
Genre: Technology & Engineering
ISBN: 9781605114071

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Symposium E, "Materials and Physics of Emerging Nonvolatile Memories," was held April 9-13 at the 2012 MRS Spring Meeting in San Francisco, California, which was a follow up of previous symposia on nonvolatile memories. In this year's symposium, 127 papers were presented in 11 sessions, including 17 invited talks, 53 oral and 57 poster contributions. Such a large number of paper submissions and high attendance in the symposium indicate continuous strong interest and worldwide research efforts in the field of nonvolatile memories. Main research areas featured in Symposium E were advanced flash and nanofloating gate memories, ferroelectric and magnetoresistive memories, organic and molecular memories, memristors and resistive switching memories, and phase-change memories. In particular, a large number of contributions were presented on resistive switching memories. The selected papers in the proceedings volume have been categorized in these areas.


Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
Author: Yoshio Nishi
Publisher: Elsevier
Total Pages: 456
Release: 2014-06-24
Genre: Computers
ISBN: 0857098098

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New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)


Materials and Physics for Nonvolatile Memories II:

Materials and Physics for Nonvolatile Memories II:
Author: Caroline Bonafos
Publisher: Cambridge University Press
Total Pages: 270
Release: 2014-06-05
Genre: Technology & Engineering
ISBN: 9781107407992

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
Author: Yoshio Nishi
Publisher: Woodhead Publishing
Total Pages: 662
Release: 2019-06-15
Genre: Science
ISBN: 0081025858

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Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory


Materials and Physics for Nonvolatile Memories II: Volume 1250

Materials and Physics for Nonvolatile Memories II: Volume 1250
Author: Caroline Bonafos
Publisher: Cambridge University Press
Total Pages: 0
Release: 2010-10-13
Genre: Technology & Engineering
ISBN: 9781605112275

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Emerging Non-Volatile Memories

Emerging Non-Volatile Memories
Author: Seungbum Hong
Publisher: Springer
Total Pages: 280
Release: 2014-11-18
Genre: Technology & Engineering
ISBN: 1489975373

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This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.


Emerging Non-volatile Memory Technologies

Emerging Non-volatile Memory Technologies
Author: Wen Siang Lew
Publisher: Springer Nature
Total Pages: 439
Release: 2021-01-09
Genre: Science
ISBN: 9811569126

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This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.


Nonvolatile Memories

Nonvolatile Memories
Author: Tseung-Yuen Tseng
Publisher:
Total Pages:
Release: 2012
Genre: Flash memories (Computers)
ISBN: 9781588832504

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