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Manufacturable Process/Tool for High-k/Metal Gate

Manufacturable Process/Tool for High-k/Metal Gate
Author: Aarthi Venkateshan
Publisher: VDM Publishing
Total Pages: 204
Release: 2008-11-01
Genre: Technology & Engineering
ISBN: 9783836481564

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Off state leakage current related power dominates the CMOS heat dissipation problem of state of the art silicon integrated circuits. In this study, this issue has been addressed in terms of a low-cost single wafer processing (SWP) technique using a single tool for the fabrication of high- dielectric gate stacks for sub-45 nm CMOS. A system for monolayer photoassisted deposition was modified to deposit high-quality HfO2 films with in-situ clean, in-situ oxide film deposition, and in-situ anneal capability. The system was automated with Labview 8.2 for gas/precursor delivery, substrate temperature and UV lamp. The gold-hafnium oxide-aluminum (Au-HfO2-Al) stacks processed in this system had superior quality oxide characteristics with gate leakage current density on the order of 1 x 10-12 A/cm2 @ 1V and maximum capacitance on the order of 75 nF for EOT=0.39 nm. Achieving low leakage current density along with high capacitance demonstrated the excellent performance of the process developed. Detailed study of the deposition characteristics such as linearity, saturation behavior, film thickness and temperature dependence was performed for tight control on process parameters. Using Box-Behnken design of experiments, process optimization was performed for an optimal recipe for HfO2 films. UV treatment with in-situ processing of metal/high- dielectric stacks was studied to provide reduced variation in gate leakage current and capacitance. High-resolution transmission electron microscopy (TEM) was performed to calculate the equivalent oxide thickness (EOT) and dielectric constant of the films. Overall, this study shows that the in-situ fabrication of MIS gate stacks allows for lower processingcosts, high throughput, and superior device performance.


Strain-Engineered MOSFETs

Strain-Engineered MOSFETs
Author: C.K. Maiti
Publisher: CRC Press
Total Pages: 320
Release: 2018-10-03
Genre: Technology & Engineering
ISBN: 1466503475

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Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.


Design for Manufacturability

Design for Manufacturability
Author: Artur Balasinski
Publisher: Springer Science & Business Media
Total Pages: 283
Release: 2013-10-05
Genre: Technology & Engineering
ISBN: 1461417619

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This book explains integrated circuit design for manufacturability (DfM) at the product level (packaging, applications) and applies engineering DfM principles to the latest standards of product development at 22 nm technology nodes. It is a valuable guide for layout designers, packaging engineers and quality engineers, covering DfM development from 1D to 4D, involving IC design flow setup, best practices, links to manufacturing and product definition, for process technologies down to 22 nm node, and product families including memories, logic, system-on-chip and system-in-package.


Semiconductor Silicon 2002

Semiconductor Silicon 2002
Author: Howard R. Huff
Publisher: The Electrochemical Society
Total Pages: 650
Release: 2002
Genre: Science
ISBN: 9781566773744

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Nano-CMOS Design for Manufacturability

Nano-CMOS Design for Manufacturability
Author: Ban P. Wong
Publisher: John Wiley & Sons
Total Pages: 408
Release: 2008-12-29
Genre: Technology & Engineering
ISBN: 0470382813

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Discover innovative tools that pave the way from circuit and physical design to fabrication processing Nano-CMOS Design for Manufacturability examines the challenges that design engineers face in the nano-scaled era, such as exacerbated effects and the proven design for manufacturability (DFM) methodology in the midst of increasing variability and design process interactions. In addition to discussing the difficulties brought on by the continued dimensional scaling in conformance with Moore's law, the authors also tackle complex issues in the design process to overcome the difficulties, including the use of a functional first silicon to support a predictable product ramp. Moreover, they introduce several emerging concepts, including stress proximity effects, contour-based extraction, and design process interactions. This book is the sequel to Nano-CMOS Circuit and Physical Design, taking design to technology nodes beyond 65nm geometries. It is divided into three parts: Part One, Newly Exacerbated Effects, introduces the newly exacerbated effects that require designers' attention, beginning with a discussion of the lithography aspects of DFM, followed by the impact of layout on transistor performance Part Two, Design Solutions, examines how to mitigate the impact of process effects, discussing the methodology needed to make sub-wavelength patterning technology work in manufacturing, as well as design solutions to deal with signal, power integrity, WELL, stress proximity effects, and process variability Part Three, The Road to DFM, describes new tools needed to support DFM efforts, including an auto-correction tool capable of fixing the layout of cells with multiple optimization goals, followed by a look ahead into the future of DFM Throughout the book, real-world examples simplify complex concepts, helping readers see how they can successfully handle projects on Nano-CMOS nodes. It provides a bridge that allows engineers to go from physical and circuit design to fabrication processing and, in short, make designs that are not only functional, but that also meet power and performance goals within the design schedule.


Handbook of Integrated Circuit Industry

Handbook of Integrated Circuit Industry
Author: Yangyuan Wang
Publisher: Springer Nature
Total Pages: 2006
Release: 2023-12-29
Genre: Technology & Engineering
ISBN: 9819928362

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Written by hundreds experts who have made contributions to both enterprise and academics research, these excellent reference books provide all necessary knowledge of the whole industrial chain of integrated circuits, and cover topics related to the technology evolution trends, fabrication, applications, new materials, equipment, economy, investment, and industrial developments of integrated circuits. Especially, the coverage is broad in scope and deep enough for all kind of readers being interested in integrated circuit industry. Remarkable data collection, update marketing evaluation, enough working knowledge of integrated circuit fabrication, clear and accessible category of integrated circuit products, and good equipment insight explanation, etc. can make general readers build up a clear overview about the whole integrated circuit industry. This encyclopedia is designed as a reference book for scientists and engineers actively involved in integrated circuit research and development field. In addition, this book provides enough guide lines and knowledges to benefit enterprisers being interested in integrated circuit industry.


Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3

Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3
Author: Zia Karim
Publisher: The Electrochemical Society
Total Pages: 546
Release: 2011-04-25
Genre: Science
ISBN: 1566778646

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This issue of ECS Transactions will cover the following topics in (a) Graphene Material Properties, Preparation, Synthesis and Growth; (b) Metrology and Characterization of Graphene; (c) Graphene Devices and Integration; (d) Graphene Transport and mobility enhancement; (e) Thermal Behavior of Graphene and Graphene Based Devices; (f) Ge & III-V devices for CMOS mobility enhancement; (g) III.V Heterostructures on Si substrates; (h) Nano-wires devices and modeling; (i) Simulation of devices based on Ge, III-V, nano-wires and Graphene; (j) Nanotechnology applications in information technology, biotechnology and renewable energy (k) Beyond CMOS device structures and properties of semiconductor nano-devices such as nanowires; (l) Nanosystem fabrication and processing; (m) nanostructures in chemical and biological sensing system for healthcare and security; and (n) Characterization of nanosystems; (f) Nanosystem modeling.