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| Author | : Norman Chihnan Tien |
| Publisher | : |
| Total Pages | : 80 |
| Release | : 1985 |
| Genre | : |
| ISBN | : |
| Author | : B.R. Nag |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 476 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 3642814166 |
Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.
| Author | : B. M. Askerov |
| Publisher | : World Scientific |
| Total Pages | : 416 |
| Release | : 1994 |
| Genre | : Technology & Engineering |
| ISBN | : 9789810212834 |
This book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.
| Author | : |
| Publisher | : |
| Total Pages | : 3 |
| Release | : 1994 |
| Genre | : |
| ISBN | : |
We investigated transport properties of InSb and GaSb. We implemented an algorithm for electron-electron scattering in the Monte Carlo simulator, and used this simulator to study the effect of electron-electron scattering at relatively low electric fields. We also developed a program for the calculation of the electron velocity and electron temperature as functions of an electric field. This calculation was based on the moment and energy balance equations. We applied this program to study the heating and drift velocity of electrons in InSb. This method is less time consuming than the Monte Carlo method and more suitable for the implementation in device simulators. We have also calculated numerically the low field mobility due to acoustic and optical phonons, obtaining excellent agreement with our Monte Carlo simulations. Based on these studies, we wrote a program for the calculation of mobilities in all cubic semiconductors and their alloys. The program assumes spherical bands, but accounts for carrier degeneracy, non-parabolicity, and varying screening length. (It can be easily modified to account for non-parabolicity.).
| Author | : Massimo V. Fischetti |
| Publisher | : Springer |
| Total Pages | : 481 |
| Release | : 2016-05-20 |
| Genre | : Technology & Engineering |
| ISBN | : 3319011014 |
This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
| Author | : Xiaolin Lei |
| Publisher | : World Scientific |
| Total Pages | : 657 |
| Release | : 2008 |
| Genre | : Technology & Engineering |
| ISBN | : 9812819029 |
This book presents a systematic, comprehensive and up-to-date description of the physical basis of the balance equation transport theory and its applications in bulk and low-dimensional semiconductors. The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, 1992). Since then, this method has been extensively developed and applied to various new fields, such as transport in nonparabolic systems, spatially nonuniform systems and semiconductor devices, miniband conduction of superlattices, hot-electron magnetotransport, effects of impact ionization in transport, microwave-induced magnetoresistance oscillation, radiation-driven transport and electron cooling, etc. Due to its simplicity and effectiveness, the balance equation approach has become a useful tool to tackle the many transport phenomena in semiconductors, and provides a reliable basis for developing theories, modeling devices and explaining experiments.The book may be used as a textbook by graduate students. It will also benefit researchers in the field by helping them grasp the basic principles and techniques of the method, without having to spend a lot of time digging out the information from widespread literature covering a period of 30 years.
| Author | : Chin Sen Ting |
| Publisher | : World Scientific |
| Total Pages | : 336 |
| Release | : 1992 |
| Genre | : Science |
| ISBN | : 9789810210083 |
This review volume is based primarily on the balance equation approach developed since 1984. It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering. The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and other related subjects of charge carriers under strong electric fields are reviewed. The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented. For semiconductors with very low carrier density, the problem can be regarded as a single carrier transport which will be treated non-perturbatively by the nonequilibrium Green's function technique and the path integral theory. The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
| Author | : Brian Edward Foutz |
| Publisher | : |
| Total Pages | : 306 |
| Release | : 2000 |
| Genre | : |
| ISBN | : |
| Author | : P. C. Chang |
| Publisher | : The Electrochemical Society |
| Total Pages | : 180 |
| Release | : 2001 |
| Genre | : Technology & Engineering |
| ISBN | : 9781566773539 |
| Author | : H Sakaki |
| Publisher | : CRC Press |
| Total Pages | : 919 |
| Release | : 2021-01-31 |
| Genre | : Science |
| ISBN | : 1000112330 |
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
