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| Author | : Kenneth R. Bradley (2LT, USAF.) |
| Publisher | : |
| Total Pages | : |
| Release | : 1979 |
| Genre | : Annealing of crystals |
| ISBN | : |
| Author | : Kenneth Reed Bradley |
| Publisher | : |
| Total Pages | : 74 |
| Release | : 1979 |
| Genre | : |
| ISBN | : |
A Q-switched ruby laser was used to irradiate implanted and unimplanted GaAs and Si. Time-resolved reflectivity measurements, which determine the length of time that the surface of the sample is melted, were performed during the laser annealing process. The length of melt versus energy density was plotted for both the implanted and unimplanted samples. No difference in the melt time was observed between implanted and unimplanted samples at high energy densities. The threshold for melting in the implanted samples was found to be lower than the virgin samples, and the energy density required to produce melting in GaAs was about 2/5 that needed for Si. The results obtained were compared to reported experimental work and numerical calculation on laser annealing. Optical reflectivity techniques, performed by Lt. Mullins were used to determine the crystallinity of the samples after annealing. (Author).
| Author | : Fuccio Cristiano |
| Publisher | : Woodhead Publishing |
| Total Pages | : 426 |
| Release | : 2021-04-21 |
| Genre | : Technology & Engineering |
| ISBN | : 0128202564 |
Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors
| Author | : J. S. Williams |
| Publisher | : Academic Press |
| Total Pages | : 432 |
| Release | : 2014-06-28 |
| Genre | : Technology & Engineering |
| ISBN | : 1483220648 |
Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
| Author | : J Poate |
| Publisher | : Elsevier |
| Total Pages | : 577 |
| Release | : 2012-12-02 |
| Genre | : Technology & Engineering |
| ISBN | : 0323145426 |
Laser Annealing of Semiconductors deals with the materials science of surfaces that have been subjected to ultrafast heating by intense laser or electron beams. This book is organized into 13 chapters that specifically tackle transient annealing of compound semiconductors. After briefly dealing with an overview of laser annealing, this book goes on discussing the concepts of solidification and crystallization pertinent to the field. These topics are followed by discussions on the main mechanisms of interaction of photon and electron beams with condensed matter; the calculation of thermophysical properties of crystalline materials; and high-speed crystal growth by laser annealing of ion-implanted silicon. The subsequent chapters describe the microstructural and topographical properties of annealed semiconductor layers and the epitaxy of ion-implanted silicon irradiated with a laser or electron beam single pulse. This text also explores the electronic and surface properties and the continuous-wave beam processing of semiconductors. The concluding chapters cover various reactions in metal-semiconductor systems, such as fast and laser-induced melting, solidification, mixing, and quenching. Laser-induced interactions in metal-semiconductor systems and the factors involved in control of the heat treatment process are also discussed in these chapters. Materials scientists and researchers and device engineers will find this book invaluable.
| Author | : Leonard C. Feldman |
| Publisher | : Academic Press |
| Total Pages | : 321 |
| Release | : 2012-12-02 |
| Genre | : Technology & Engineering |
| ISBN | : 0323139817 |
Our intention has been to write a book that would be useful to people with a variety of levels of interest in this subject. Clearly it should be useful to both graduate students and workers in the field. We have attempted to bring together many of the concepts used in channeling beam analysis with an indication of the origin of the ideas within fundamental channeling theory. The level of the book is appropriate to senior under-graduates and graduate students who have had a modern physics course work in related areas of materials science and wish to learn more about the "channeling" probe, its strengths, weaknesses, and areas of further potential application. To them we hope we have explained this apparent paradox of using mega-electron volt ions to probe solid state phenomena that have characteristic energies of electron volts.
| Author | : Materials Research Society. Meeting |
| Publisher | : |
| Total Pages | : 842 |
| Release | : 1982 |
| Genre | : Technology & Engineering |
| ISBN | : |
| Author | : M. Bertolotti |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 518 |
| Release | : 2013-11-11 |
| Genre | : Technology & Engineering |
| ISBN | : 1468443224 |
It is a pleasure to write a few words as an introduction to the proceedings of the 1980 NATO ASI on "Physical Processes in Laser Naterial Interaction." This ASI is the ninth course of a series devoted to lasers and their applications, held under the responsibility of the Quantum Electronics Division of the European Physical Society, and for this reason known as the "Europhysics School of Quantum Electronics." Since 1971 the School has been operating with the joint direc tion of myself as representative of the academic research, and Dr. D. Roess (formerly with Siemens AEG, Munich, and now with Sick, Optik und Electronik, GmbH, Munich) for the industrial applications. Indeed the aim of the School is to alternate fundamental and applied frontier topics in the area of quantum electronics and modern optics, in order to introduce young research people from universities and industrial R&D laboratories to the new aspects of research opened by the laser.
| Author | : |
| Publisher | : |
| Total Pages | : 952 |
| Release | : 1968 |
| Genre | : Science |
| ISBN | : |
| Author | : |
| Publisher | : |
| Total Pages | : 1134 |
| Release | : 1989 |
| Genre | : Aeronautics |
| ISBN | : |
