Large Signal Modeling Of Gan Device For High Power Amplifier Design PDF Download
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Author | : Anwar Hasan Jarndal |
Publisher | : kassel university press GmbH |
Total Pages | : 136 |
Release | : 2006 |
Genre | : |
ISBN | : 3899582586 |
Download Large Signal Modeling of GaN Device for High Power Amplifier Design Book in PDF, ePub and Kindle
Author | : Endalkachew Shewarega Mengistu |
Publisher | : kassel university press GmbH |
Total Pages | : 153 |
Release | : 2008 |
Genre | : |
ISBN | : 3899583817 |
Download Large-signal Modeling of GaN HEMTs for Linear Power Amplifier Design Book in PDF, ePub and Kindle
Author | : Anwar Jarndal |
Publisher | : |
Total Pages | : |
Release | : 2010 |
Genre | : |
ISBN | : 9789533070421 |
Download Large-Signal Modeling of GaN Devices for Designing High Power Amplifiers of Next Generation Wireless Communication Systems Book in PDF, ePub and Kindle
Author | : Suramate Chalermwisutkul |
Publisher | : |
Total Pages | : 0 |
Release | : 2007 |
Genre | : |
ISBN | : |
Download Large Signal Modeling of GaN HEMTs for UMTS Base Station Power Amplifier Design Taking Into Account Memory Effects Book in PDF, ePub and Kindle
Author | : Diego Guerra |
Publisher | : LAP Lambert Academic Publishing |
Total Pages | : 224 |
Release | : 2012-02 |
Genre | : |
ISBN | : 9783847325673 |
Download Gan Hemt Modeling and Design for Mm and Sub-Mm Wave Power Amplifiers Book in PDF, ePub and Kindle
This work initially compares GaN high electron mobility transistors (HEMTs) based on the established Ga-face technology and the emerging N-face technology. An investigation is then carried out on the short channel effects in ultra-scaled GaN and InP HEMTs. The dielectric effects of the passivation layer in millimeter-wave, high-power GaN HEMTs are also investigated by focusing on the effective gate length, the gate fringing capacitance, and the drain-to-gate feedback capacitance. Lastly, efficient Full Band Monte Carlo particle-based device simulations of the large-signal performance of millimeter-wave transistor power amplifiers with high-Q matching networks are reported for the first time. In particular, a Cellular Monte Carlo code is self-consistently coupled with a Harmonic Balance frequency domain circuit solver. This book provides device engineers with an insight about the link between the nano-scale carrier dynamics and the device performance. It also introduces an efficient tool for the device early-stage design for RF power amplifiers.
Author | : Jutta Kühn |
Publisher | : KIT Scientific Publishing |
Total Pages | : 264 |
Release | : 2011 |
Genre | : Power amplifiers |
ISBN | : 3866446152 |
Download AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications Book in PDF, ePub and Kindle
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.
Author | : Jeffrey Lee Tan |
Publisher | : |
Total Pages | : |
Release | : 2017 |
Genre | : |
ISBN | : 9780355451528 |
Download Design of High Power, Wideband Microwave Frequency Class F Power Amplifiers Using AlGaN/GaN HEMTs Book in PDF, ePub and Kindle
This thesis presents the theory, design, and implementation of two high power (>10 W) RF power amplifiers operating in the S-band (2 to 4 GHz) and employing the Class F mode of efficiency enhancement. The amplifiers are based around gallium nitride (GaN) high electron mobility transistors (HEMTs) which provide the high power capability. A complex wideband design using synthesized low-pass transforming filters as large-bandwidth matching networks is presented, followed by a more elegant narrowband design employing simple stub matching networks for impedance matching and harmonic control. Also presented in this thesis is a detailed study into the computer modeling of the GaN HEMT devices in order to accurately predict their behavior when integrated into a system. A complete small-signal circuit model is developed which is capable of predicting the scattering parameters of the devices with a high degree of accuracy to the measured behavior. Large-signal device models of increasing complexity are studied to investigate fundamental behaviors of field-effect transistors for which HEMTs are a subset. Finally, the manufacturer design kit’s computer model is investigated and verified for accuracy with the measured results.An overview of power amplifier design and classes of operation is given, and specifically Class F theory and implementation are analyzed. The efficiency enhancement by waveform shaping is studied, as well as the mechanism of waveform shaping via harmonic manipulation. Once fabricated and tested, the wideband design is shown to achieve at least 38.8 dBm output power between 2.2 to 3.3 GHz centered around 2.75 GHz, giving a fractional bandwidth of 40%. Over that range, the PA is able to sustain PAE > 40%, with a peak efficiency of 61%. The narrowband design achieves an output power at its center frequency of 3 GHz of 41.48 dBm, or ~14 W, with the PAE achieving a maximum of approximately 66%.
Author | : Jaime Alberto Zamudio Flores |
Publisher | : kassel university press GmbH |
Total Pages | : 257 |
Release | : 2012-08-21 |
Genre | : Gallium nitride |
ISBN | : 3862193640 |
Download Device Characterization and Modeling of Large-Size GaN HEMTs Book in PDF, ePub and Kindle
This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.
Author | : |
Publisher | : |
Total Pages | : |
Release | : 2018 |
Genre | : |
ISBN | : |
Download Large Signal Modeling of AlGaN/GaN HEMTs and Design of 50W Power Amplifier at 3.5Ghz Book in PDF, ePub and Kindle
Author | : Roshanak Lehna |
Publisher | : kassel university press GmbH |
Total Pages | : 190 |
Release | : 2017-11-13 |
Genre | : |
ISBN | : 373760388X |
Download Partitioning Design Approach for the Reliable Design of Highly Efficient RF Power Amplifiers Book in PDF, ePub and Kindle
The modern wireless communication systems require modulated signals with wide modulation bandwidth. This, in turns, requires signals with very high dynamic range and peak-to-average power ratio (PAPR). This means that the amplifier in the base-station has to work at a power back-off as large as the dynamic range of the signal, so that the amplifier has a high linearity in this region. For the standard single-stage amplifiers, this large power back-off reduces the efficiency dramatically. In this work, a three-way Doherty power amplifier (DPA) aiming at high power efficiency within a dynamic range of 9.5 dB, is designed and fabricated using partitioning design approach. The partitioning design approach decomposes a complex design task into small-sized, well-controllable, and verifiable subcircuits. This advanced straight forward method has shown very promising results. Using this design approach, a three-way DPA has been designed to demonstrate the advantages of this reliable design technique as well. Based on the design of a single-stage power amplifier and proposing a novel output power combiner, a 6 W three-way DPA has been designed which allows the mandatory load modulation principle in three-way DPA structures to be realized with simpler elements, whereas the design of a standard Doherty combiner would have been very challenging and not practical due to the extremely small value of its characteristic line impedance. The proposed combiner is calculated for a three-way DPA with 2-mm AlGaN/GaN-HEMTs. The simulation result shows a very good load modulation for the amplifier, which confirms the theoretical expectation for a three-way DPA. The efficiency of the designed 6 W three-way DPA at large back-off shows very promising values compared to recently reported amplifiers. The measured IMD3 products confirm the good linearity of the amplifier as well. Accordingly, the proposed power combiner and the design strategy are recommended to be used as the preferred option for designing three-way DPA structures with very high output power.