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| Author | : Michael Nastasi |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 271 |
| Release | : 2007-05-16 |
| Genre | : Science |
| ISBN | : 3540452982 |
Download Ion Implantation and Synthesis of Materials Book in PDF, ePub and Kindle
Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
| Author | : Emanuele Rimini |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 400 |
| Release | : 2013-11-27 |
| Genre | : Technology & Engineering |
| ISBN | : 1461522595 |
Download Ion Implantation: Basics to Device Fabrication Book in PDF, ePub and Kindle
Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
| Author | : J.F. Ziegler |
| Publisher | : Elsevier |
| Total Pages | : 649 |
| Release | : 2012-12-02 |
| Genre | : Science |
| ISBN | : 0323144012 |
Download Ion Implantation Science and Technology Book in PDF, ePub and Kindle
Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
| Author | : Ishaq Ahmad |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 154 |
| Release | : 2017-06-14 |
| Genre | : Science |
| ISBN | : 9535132377 |
Download Ion Implantation Book in PDF, ePub and Kindle
Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.
| Author | : M.S. Dresselhaus |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 212 |
| Release | : 2013-03-08 |
| Genre | : Science |
| ISBN | : 3642771718 |
Download Ion Implantation in Diamond, Graphite and Related Materials Book in PDF, ePub and Kindle
Carbon has always been a unique and intriguing material from a funda mental standpoint and, at the same time, a material with many technological uses. Carbon-based materials, diamond, graphite and their many deriva tives, have attracted much attention in recent years for many reasons. Ion implantation, which has proven to be most useful in modifying the near surface properties of many kinds of materials, in particular semiconductors, has also been applied to carbon-based materials. This has yielded, mainly in the last decade, many scientifically interesting and technologically impor tant results. Reports on these studies have been published in a wide variety of journals and topical conferences, which often have little disciplinary overlap, and which often address very different audiences. The need for a review to cover in an integrated way the various diverse aspects of the field has become increasingly obvious. Such a review should allow the reader to get an overview of the research that has been done thus far, to gain an ap preciation of the common features in the response of the various carbon to ion impact, and to become aware of current research oppor allotropes tunities and unresolved questions waiting to be addressed. Realizing this, and having ourselves both contributed to the field, we decided to write a review paper summarizing the experimental and theoretical status of ion implantation into diamond, graphite and related materials.
| Author | : Edmund G. Seebauer |
| Publisher | : American Institute of Physics |
| Total Pages | : 582 |
| Release | : 2008-12-11 |
| Genre | : Technology & Engineering |
| ISBN | : 9780735405974 |
Download Ion Implantation Technology Book in PDF, ePub and Kindle
The conference is focused on recent advances and emerging technologies in semiconductor processing before, during and after ion implantation. The content encompasses fundamental physical understanding, common and novel applications as well as equipment issues, maintenance and design. The primary audience is process engineers in the microelectronics industry. Additional contributions come from academia and other industry segments (automotive, aerospace, and medical device manufacturing).
| Author | : Michael Nastasi |
| Publisher | : Cambridge University Press |
| Total Pages | : 572 |
| Release | : 1996-03-29 |
| Genre | : Science |
| ISBN | : 052137376X |
Download Ion-Solid Interactions Book in PDF, ePub and Kindle
Comprehensive guide to an important materials science technique for students and researchers.
| Author | : James Mayer |
| Publisher | : Elsevier |
| Total Pages | : 297 |
| Release | : 2012-12-02 |
| Genre | : Technology & Engineering |
| ISBN | : 0323157211 |
Download Lon Implantation in Semiconductors Book in PDF, ePub and Kindle
Ion Implantation in Semiconductors: Silicon and Germanium covers the developments in the major basic aspects in ion implantation in silicon and germanium. These aspects include dopant distribution and location, radiant damage, and electrical characteristics. This book is composed of six chapters and begins with a discussion on the factors affecting the electrical characteristics of implanted layers in silicon and germanium, such as range distributions of dopant species, lattice disorder, and location of dopant species on substitutional and interstitial sites in the lattice. The next chapters examine the basic principles of range distributions of implanted atoms and the problem of lattice disorder and radiation damage, which are vital in most implantation work. These topics are followed by an outline of the so-called channeling effect technique and its application in lattice location determination of implanted atoms. A chapter describes the dopant behavior in the layers where the majority of the implanted atoms are located, emphasizing the use of Hall-effect and sheet-resistivity measurements to determine the carrier concentration and mobility. The final chapter considers the primary characteristics of ion-implanted layers in semiconductors. This chapter also presents several rules of thumb, which allow first approximations to be made. This book is an ideal source for semiconductor specialists, researchers, and manufacturers.
| Author | : Veronica Borcea |
| Publisher | : Presses univ. de Louvain |
| Total Pages | : 190 |
| Release | : 2008 |
| Genre | : Science |
| ISBN | : 9782874631276 |
Download Radioactive Ion Implantation of Thermoplastic Elastomers Book in PDF, ePub and Kindle
The radioactive ion implantation wear measuring method (RII) has been used for many years as a tool to make highly sensitive real-time in-situ measurements of wear and corrosion in metallic or ceramic materials. The method consists of the controlled implantation of radioactive ions of limited decay time in a thin layer at the surface of the material. The progressive abrasion of the material results in a decline in radioactivity which is followed to monitor material losses. The application of RII to control the wear of polymers is potentially of interest, but it has been lagging behind because of uncertainties related to possible changes in material properties during and after the implantation, and to the exact shape of implantation profiles. In this thesis, we investigate these issues on two thermoplastic elastomers, among which one contains radiation-sensitive unsaturated bonds, using as ions 7Be, 7Li and Kr. The results of the sample characterisation indicate that the 7Be and 7Li implantations, under properly-selected conditions, do not induce significant modifications in the materials. The implantation of a stack of polymer thin films and the activity measurements performed to determine the implantation profile are also presented. The experimental results on the ion implantation profiles and the determination of calibration curves are presented and discussed in comparison with simulated results. The results indicate that it is possible to predict the implantation profile by means of simulations. This bodes well for the application of the RII method to polymer materials. An experimental study is presented regarding the possible redistribution of the implanted 7Be after implantation. Since very few existing experimental techniques are able to detect light elements implanted in polymer targets at fluences less or equal to 1012 cm-2, with implantation depths of a few μm, a new method is presented, which implies the use of plasma etching techniques in order to remove layers of polymers and measuring the remaining activity after each step. Our results indicate that a redistribution of the implanted ions takes place during the implantation process, resulting in a scrambling of the initial implantation profile. Nevertheless, provided a suitable methodology be used, wear measurements in polymers by using the RII method are still possible, as we propose in the thesis.
| Author | : Mark Goorsky |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 452 |
| Release | : 2012-05-30 |
| Genre | : Science |
| ISBN | : 9535106341 |
Download Ion Implantation Book in PDF, ePub and Kindle
Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.
