Ion Beams As A Means Of Deposition And In Situ Characterization Of Thin Films And Thin Film Layered Structures PDF Download

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Ion Beams as a Means of Deposition and In-situ Characterization of Thin Films and Thin Film Layered Structures

Ion Beams as a Means of Deposition and In-situ Characterization of Thin Films and Thin Film Layered Structures
Author:
Publisher:
Total Pages: 27
Release: 1992
Genre:
ISBN:

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Ion beam-surface interactions produce many effects in thin film deposition which are similar to those encountered in plasma deposition processes. However, because of the lower pressures and higher directionality associated with the ion beam process, it is easier to avoid some sources of film contamination and to provide better control of ion energies and fluxes. Additional effects occur in the ion beam process because of the relatively small degree of thermalization resulting from gas phase collisions with both the ion beam and atoms sputtered from the target. These effects may be either beneficial or detrimental to the film properties, depending on the material and deposition conditions. Ion beam deposition is particularly suited to the deposition of multi-component films and layered structures, and can in principle be extended to a complete device fabrication process. However, complex phenomena occur in the deposition of many materials of high technical interest which make it desirable to monitor the film growth at the monolayer level. It is possible to make use of ion-surface interactions to provide a full suite of surface analytical capabilities in one instrument, and this data may be obtained at ambient pressures which are far too high for conventional surface analysis techniques. Such an instrument is under development and its current performance characteristics and anticipated capabilities are described.


In Situ Real-Time Characterization of Thin Films

In Situ Real-Time Characterization of Thin Films
Author: Orlando Auciello
Publisher: John Wiley & Sons
Total Pages: 282
Release: 2001
Genre: Science
ISBN: 9780471241416

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An in-depth look at the state of the art of in situ real-time monitoring and analysis of thin films With thin film deposition becoming increasingly critical in the production of advanced electronic and optical devices, scientists and engineers working in this area are looking for in situ, real-time, structure-specific analytical tools for characterizing phenomena occurring at surfaces and interfaces during thin film growth. This volume brings together contributed chapters from experts in the field, covering proven methods for in situ real-time analysis of technologically important materials such as multicomponent oxides in different environments. Background information and extensive references to the current literature are also provided. Readers will gain a thorough understanding of the growth processes and become acquainted with both emerging and more established methods that can be adapted for in situ characterization. Methods and their most useful applications include: * Low-energy time-of-flight ion scattering and direct recoil spectroscopy (TOF-ISRAS) for studying multicomponent oxide film growth processes * Reflection high-energy electron diffraction (RHEED) for determining the nature of chemical reactions at film surfaces * Spectrometric ellipsometry (SE) for use in the analysis of semiconductors and other multicomponent materials * Reflectance spectroscopy and transmission electron microscopy for monitoring epitaxial growth processes * X-ray fluorescence spectroscopy for studying surface and interface structures * And other cost-effective techniques for industrial application


Ion Beam-based Characterization of Multicomponent Oxide Thin Films and Thin Film Layered Structures

Ion Beam-based Characterization of Multicomponent Oxide Thin Films and Thin Film Layered Structures
Author:
Publisher:
Total Pages: 30
Release: 1992
Genre:
ISBN:

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Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 [Angstrom]), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 [Angstrom] of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.


In Situ Characterization of Thin Film Growth

In Situ Characterization of Thin Film Growth
Author: Gertjan Koster
Publisher: Elsevier
Total Pages: 295
Release: 2011-10-05
Genre: Technology & Engineering
ISBN: 0857094955

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Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques


Pulsed Ion Beam Surface Analysis (PIBSA) as a Means of In-situ Real-time Analysis of Thin Films During Growth

Pulsed Ion Beam Surface Analysis (PIBSA) as a Means of In-situ Real-time Analysis of Thin Films During Growth
Author:
Publisher:
Total Pages: 23
Release: 1993
Genre:
ISBN:

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Low energy (5-15 keV) pulsed ion beam surface analysis (PIBSA) comprises several different surface spectroscopies which provide a wide range of information relevant to growth of single and multi-component semiconductor, metal and metal oxide thin f@ and layered structures. Ion beam methods have not been widely used as an in-situ monitor of thin film growth. PIBSA has been developed as a non-destructive, in-situ, real-time probe of thin film composition and structure which does not physically interfere with deposition. Several PIBSA versions are exceptionally surface-specific, yet can yield high resolution data at ambient pressures in excess of 1 m Torr (4-5 orders of magnitude higher than conventional surface analytic methods). Therefore, PIBSA is ideal for studying ultra-thin layers and atomically abrupt interfaces. PIBSA instrumentation designed for use as an in-situ, real-time monitor of growth processes for single and multi-component thin films and layered structures is described. Representative data are shown for in-situ analysis of Pb and Zr layers at room temperature and high vacuum, as well as under conditions for growth of PZT perovskite films on MgO and RuO2 substrates.


Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices

Multicomponent and Multilayered Thin Films for Advanced Microtechnologies: Techniques, Fundamentals and Devices
Author: O. Auciello
Publisher: Springer Science & Business Media
Total Pages: 625
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 9401117276

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The synthesis of multicomponent/multilayered superconducting, conducting, semiconducting and insulating thin films has become the subject of an intensive, worldwide, interdisciplinary research effort. The development of deposition-characterization techniques and the science and technology related to the synthesis of these films are critical for the successful evolution of this interdisciplinary field of research and the implementation of the new materials in a whole new generation of advanced microdevices. This book contains the lectures and contributed papers on various scientific and technological aspects of multicomponent and multilayered thin films presented at a NATO/ASI. Compared to other recent books on thin films, the distinctive character of this book is the interdisciplinary treatment of the various fields of research related to the different thin film materials mentioned above. The wide range of topics discussed in this book include vacuum-deposition techniques, synthesis-processing, characterization, and devices of multicomponent/multilayered oxide high temperature superconducting, ferroelectric, electro-optic, optical, metallic, silicide, and compound semiconductor thin films. The book presents an unusual intedisciplinary exchange of ideas between researchers with cross-disciplinary backgrounds and it will be useful to established investigators as well as postdoctoral and graduate students.


Ion Beam Surface Layer Analysis

Ion Beam Surface Layer Analysis
Author: Otto Meyer
Publisher: Springer
Total Pages: 528
Release: 1976-05
Genre: Science
ISBN:

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The II. International Conference on Ion Beam Surface Layer Analysis was held on September 15-19, 1975 at the Nuclear Research Center, Karlsruhe, Germany. The date fell between two related con ferences: "Application of Ion-Beams to Materials" at Warwick, Eng land and "Atomic Collisions in Solids" at Amsterdam, the Nether lands. The first conference on Ion Beam Surface Layer Analysis was held at Yorktown Heights, New York, 1973. The major topic of that and the present conference was the material analysis with ion beams including backscattering and channeling, nuclear reactions and ion induced X-rays with emphasis on technical problems and no vel applications. The increasing interest in this field was docu mented by 7 invited papers and 85 contributions which were presen ted at the meeting in Karlsruhe to about 150 participants from 21 countries. The oral presentations were followed by parallel ses sions on "Fundamental Aspects", "Analytical Problems" and "Appli cations" encouraging detailed discussions on the topics of most current interest. Summaries of these sessions were presented by the discussion leaders to the whole conference. All invited and contributed papers are included in these proceedings; summaries of the discussion sessions will appear in a separate booklet and are availble from the editors. The application of ion beams to material analysis is now well established.