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| Author | : Yongsik Moon |
| Publisher | : |
| Total Pages | : 70 |
| Release | : 1997 |
| Genre | : Grinding and polishing |
| ISBN | : |
| Author | : Wei Che |
| Publisher | : |
| Total Pages | : 144 |
| Release | : 2002 |
| Genre | : |
| ISBN | : |
Chemical Mechanical Polishing (CMP) is becoming an integral processing step in multilevel metallization designs for integrated circuit (IC) manufacturing. CMP is a process for surface planarization, aided by the combined actions of the chemical etching and mechanical polishing. It provides the needed local die planarization and global wafer surface uniformity. However, the material removal mechanisms (MRM) in the CMP process are not well understood, and the theoretical models for prediction of material removal rate (MRR) are not fully developed. The objective of this research is to study the surface material removal mechanisms in ductile materials during this micro and nano- polishing process, and develop mechanistic MRR models to optimize the process parameters. In the current framework, the abrasion process of pure copper surfaces is studied by a cross-scratch experiment in the micro scale regime. The experimentally measured force profiles are analyzed and compared to the deformation patterns from the SEM micrographs and surface profile. It is found that there is no net surface material removal along the trench formation. However, we observed that material is detached near the intersection between two scratches. It is speculated that for ductile surfaces, the deformation mechanism changes from ploughing mode to shearing mode as the indenter approaches the intersection of two scratches. The characteristic length of the detached segment is found to be proportional to the indentation depth. This finding is further clarified by FEM results and Molecular Dynamics simulations in our group. A mechanism based MRR model is then developed for CMP process. The predicted material removal rates are comparable to the experiment data.
| Author | : Andrew Kunung Chang |
| Publisher | : |
| Total Pages | : 382 |
| Release | : 2002 |
| Genre | : |
| ISBN | : |
| Author | : Guanghui Fu |
| Publisher | : |
| Total Pages | : 258 |
| Release | : 2002 |
| Genre | : |
| ISBN | : |
Chemical Mechanical Polishing (CMP) has grown rapidly during the past decade as part of mainstream processing method in submicron integrated circuit manufacturing because of its global or near-global planarization ability. However, CMP process is influenced by many factors and is poorly understood. It makes process control and optimization very difficult. This study focuses on the modeling and simulation to facilitate better understanding and better control of the CMP process. The thesis outlines the modeling of CMP process in three scales: particle scale for material removal mechanism, wafer scale for within wafer nonuniformity issues and feature scale for dishing and erosion in metal CMP. At the particle scale, material removal mechanism is assumed to be due to local plastic deformation of wafer surface material. A mechanistic material removal model is derived that delineates the influence of abrasive (shape, size and concentration), pad (rigidity) and process parameters (pressure and relative velocity) on the material removal rate (MRR). Wafer scale model is based on the solution of indentation of elastic half space by a rigid frictionless polynomial punch. The load-displacement relationship is also derived and the conditions for unbonded or bonded contact are obtained from the boundary condition at punch edge. The corresponding viscoelastic solution is obtained through Laplace transform and elastic-viscoelastic analogy. The elastic solution is used to explain the edge effect. Viscoelastic solution is used to explain MRR decay for unconditioned pad. The relationships among wafer-pad interface pressure, wafer shape and wafer loading condition are also investigated. Feature scale model is based on Preston's relationship for material removal and constant downforce. It shows dishing is governed by polishing conditions (overpolishing, pressure, velocity), slurry (selectivity), pad characteristics (pad stiffness and bending ability), as well as wafer surface feature topography (pattern density, linewidth and pitch). This model is also valid for step height reduction when the same surface material is polished. Due to process complexity and coupling of various parameters, more fundamental research needs to be carried out and carefully designed experiments need to be done to verify the models. Recommendations for future research work is presented at the end.
| Author | : Jianfeng Luo |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 327 |
| Release | : 2013-03-09 |
| Genre | : Science |
| ISBN | : 3662079283 |
Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.
| Author | : Yongsik Moon |
| Publisher | : |
| Total Pages | : 436 |
| Release | : 1999 |
| Genre | : |
| ISBN | : |
| Author | : Babu Suryadevara |
| Publisher | : Woodhead Publishing |
| Total Pages | : 650 |
| Release | : 2021-09-10 |
| Genre | : Technology & Engineering |
| ISBN | : 0128218193 |
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
| Author | : K. L. Mittal |
| Publisher | : John Wiley & Sons |
| Total Pages | : 482 |
| Release | : 2015-01-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1118831543 |
The book provides a comprehensive and easily accessible reference source covering all important aspects of particle adhesion and removal. The core objective is to cover both fundamental and applied aspects of particle adhesion and removal with emphasis on recent developments. Among the topics to be covered include: 1. Fundamentals of surface forces in particle adhesion and removal. 2. Mechanisms of particle adhesion and removal. 3. Experimental methods (e.g. AFM, SFA,SFM,IFM, etc.) to understand particle-particle and particle-substrate interactions. 4. Mechanics of adhesion of micro- and nanoscale particles. 5. Various factors affecting particle adhesion to a variety of substrates. 6. Surface modification techniques to modulate particle adhesion. 7. Various cleaning methods (both wet & dry) for particle removal. 8. Relevance of particle adhesion in a host of technologies ranging from simple to ultra-sophisticated.
| Author | : Joseph M. Steigerwald |
| Publisher | : John Wiley & Sons |
| Total Pages | : 337 |
| Release | : 2008-09-26 |
| Genre | : Science |
| ISBN | : 3527617752 |
Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.
| Author | : Anna Igual Munoz |
| Publisher | : Springer Nature |
| Total Pages | : 110 |
| Release | : 2020-06-16 |
| Genre | : Technology & Engineering |
| ISBN | : 3030481077 |
This book is a toolbox for identifying and addressing tribocorrosion situations from an engineering point of view. It is an accessible and introductory guideline to the emerging and interdisciplinary field of tribocorrosion covering the main concepts of tribology and corrosion. It describes specific tribocorrosion concepts, models and experimental techniques as well as their application to practical situations in which mechanical and chemical phenomena act simultaneously.
