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| Author | : 楊宗翰 |
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| Total Pages | : 75 |
| Release | : 2013 |
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| Release | : 2001 |
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The electronic, optical and luminescent properties of europium doped wide band gap oxide thin films and the electronic properties of indium gallium zinc oxide (IGZO), a novel amorphous oxide semiconductor were investigated. The thin films of europium doped gallium and gadolinium oxides and indium gallium zinc oxide were deposited on c-axis oriented sapphire substrates by Pulsed Laser Deposition at various conditions of temperature, pressure and doping concentration. Europium doped gallium oxide was found to be in beta phase with monoclinic crystal structure and the films exhibited intense red emission under cathode ray excitation with a peak wavelength of emission at 611 nm which corresponds to the transitions from 5D0 to 7F2 levels in europium. Europium doped gadolinium oxide thin films were found to exhibit two different phases (cubic and monoclinic) with the one of the phases being dominant depending on the growth conditions. The peak wavelength of emission was either 611 nm or 613 nm depending on the phase of the films. The amorphous indium gallium zinc oxide thin films were found to exhibit very high hall mobilities of the order of ̃15 cm2∙V−1∙s−1 and the conductivity could be controlled over several orders of magnitude from 5 x 10−3 S∙cm−1 to 10 S∙cm−1 in the amorphous phase. Annealing the films in presence of air was found to decrease the carrier concentration of the films due the incorporation of oxygen in the films thereby filling up the oxygen vacancies. Applications of amorphous indium gallium zinc oxide include Transparent Thin Film Transistors and use as transparent conducting oxide for optoelectronic devices.
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| Total Pages | : 99 |
| Release | : 2015 |
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| Author | : 吳昱陞 |
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| Total Pages | : 99 |
| Release | : 2011 |
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| Release | : 2006 |
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The ability to make electronic devices, that are transparent to visible and near infrared wavelength, is a relatively new field of research in the development of the next generation of optoelectronic devices. A new class of inorganic thin-film transistor (TFT) channel material based on amorphous oxide semiconductors, that show high carrier mobility and high visual transparency, is being researched actively. The purpose of this dissertation is to develop amorphous oxide semiconductors by pulsed laser deposition, show their suitability for TFT applications and demonstrate other classes of devices such as non-volatile memory elements and integrated circuits such as ring oscillators and active matrix pixel elements. Indium gallium zinc oxide (IGZO) is discussed extensively in this dissertation. The influence of several deposition parameters is explored and oxygen partial pressure during deposition is found to have a profound effect on the electrical and optical characteristics of the IGZO films. By optimizing the deposition conditions, IGZO TFTs exhibit excellent electrical properties, even without any intentional annealing. This attribute along with the amorphous nature of the material also makes IGZO TFTs compatible with flexible substrates opening up various applications. IGZO TFTs with saturation field effect mobility of 12 â€" 16 cm2 V-1 s-1 and subthreshold voltage swing of 200 mV decade-1 have been fabricated. By varying the oxygen partial pressure during deposition the conductivity of the channel was controlled to give a low off-state current ~ 10 pA and a drain current on/off ratio of 1 x108. Additionally, the effects of the oxygen partial pressure and the thickness of the semiconductor layer, the choice of the gate dielectric material and the device channel length on the electrical characteristics of the TFTs are explored. To evaluate IGZO TFT electrical stability, constant voltage bias stress measurements were carried out. The observed logarithmic depende.
| Author | : 溫承樺 |
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| Total Pages | : 91 |
| Release | : 2014 |
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| Author | : 馮正倫 |
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| Release | : 2017 |
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| Author | : Tsung-Han Chiang |
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| Total Pages | : 63 |
| Release | : 2015 |
| Genre | : Indium gallium zinc oxide |
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The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] - V[subscript G]) transfer curves. For a fixed set of process parameters, it is found that the turn-on voltage, V[subscript ON] (off drain current, I[superscript OFF][subscript D]) increases (decreases) with decreasing a-IGZO channel thickness (h) for h
| Author | : Hideo Hosono |
| Publisher | : John Wiley & Sons |
| Total Pages | : 644 |
| Release | : 2022-05-31 |
| Genre | : Technology & Engineering |
| ISBN | : 1119715571 |
AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.
| Author | : 吳韋廷 |
| Publisher | : |
| Total Pages | : 74 |
| Release | : 2017 |
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