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Introduction to Device Modeling and Circuit Simulation

Introduction to Device Modeling and Circuit Simulation
Author: Tor A. Fjeldly
Publisher: Wiley-Interscience
Total Pages: 440
Release: 1998
Genre: Computers
ISBN:

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This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.


FET Modeling for Circuit Simulation

FET Modeling for Circuit Simulation
Author: Dileep A. Divekar
Publisher: Springer Science & Business Media
Total Pages: 192
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1461316871

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Circuit simulation is widely used for the design of circuits, both discrete and integrated. Device modeling is an impor tant aspect of circuit simulation since it is the link between the physical device and the sim ulate d device. Curren tly available circuit simulation programs provide a variety of built-in models. Many circuit designers use these built-in models whereas some incorporate new models in the circuit sim ulation programs. Understanding device modeling with particular emphasis on circuit simulation will be helpful in utilizing the built-in models more efficiently as well as in implementing new models. SPICE is used as a vehicle since it is the most widely used circuit sim ulation program. How ever, some issues are addressed which are not directly appli cable to SPICE but are applicable to circuit simulation in general. These discussions are useful for modifying SPICE and for understanding other simulation programs. The gen eric version 2G. 6 is used as a reference for SPICE, although numerous different versions exist with different modifications. This book describes field effect transistor models commonly used in a variety of circuit sim ulation pro grams. Understanding of the basic device physics and some familiarity with device modeling is assumed. Derivation of the model equations is not included. ( SPICE is a circuit sim ulation program available from EECS Industrial Support Office, 461 Cory Hall, University of Cali fornia, Berkeley, CA 94720. ) Acknowledgements I wish to express my gratitude to Valid Logic Systems, Inc.


Silicon and Beyond

Silicon and Beyond
Author: Michael Shur
Publisher: World Scientific
Total Pages: 196
Release: 2000
Genre: Technology & Engineering
ISBN: 9789810242800

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The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field. The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for,handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.


Silicon And Beyond: Advanced Device Models And Circuit Simulators

Silicon And Beyond: Advanced Device Models And Circuit Simulators
Author: Tor A Fjeldly
Publisher: World Scientific
Total Pages: 188
Release: 2000-04-20
Genre: Technology & Engineering
ISBN: 9814493260

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The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.


Fet Modeling for Circuit Simulation

Fet Modeling for Circuit Simulation
Author: Dileep A Divekar
Publisher:
Total Pages: 204
Release: 1988-03-31
Genre:
ISBN: 9781461316886

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Device Modeling for Analog and RF CMOS Circuit Design

Device Modeling for Analog and RF CMOS Circuit Design
Author: Trond Ytterdal
Publisher: John Wiley & Sons
Total Pages: 306
Release: 2003-08-01
Genre: Technology & Engineering
ISBN: 0470864346

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Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 &, and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.


III-V Nitride Semiconductors

III-V Nitride Semiconductors
Author: Edward T. Yu
Publisher: CRC Press
Total Pages: 718
Release: 2002-09-06
Genre: Technology & Engineering
ISBN: 9781560329749

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The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers.


Semiconductor Device Modeling with Spice

Semiconductor Device Modeling with Spice
Author: Giuseppe Massabrio
Publisher: McGraw Hill Professional
Total Pages: 500
Release: 1998-12-22
Genre: Technology & Engineering
ISBN: 9780071349550

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Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.


Semiconductor Device Modelling

Semiconductor Device Modelling
Author: Christopher M. Snowden
Publisher: Springer Science & Business Media
Total Pages: 267
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 1447110331

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Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.


Mosfet Modeling for VLSI Simulation

Mosfet Modeling for VLSI Simulation
Author: Narain Arora
Publisher: World Scientific
Total Pages: 633
Release: 2007
Genre: Technology & Engineering
ISBN: 9812707581

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A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.