In Situ Characterization of Oxide Thin Film Growth
| Author | : Eric James Watko |
| Publisher | : |
| Total Pages | : 170 |
| Release | : 1995 |
| Genre | : |
| ISBN | : |
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In Situ Characterization of Thin Film Growth
| Author | : Gertjan Koster |
| Publisher | : Elsevier |
| Total Pages | : 295 |
| Release | : 2011-10-05 |
| Genre | : Technology & Engineering |
| ISBN | : 0857094955 |
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Advanced techniques for characterizing thin film growth in situ help to develop improved understanding and faster diagnosis of issues with the process. In situ characterization of thin film growth reviews current and developing techniques for characterizing the growth of thin films, covering an important gap in research. Part one covers electron diffraction techniques for in situ study of thin film growth, including chapters on topics such as reflection high-energy electron diffraction (RHEED) and inelastic scattering techniques. Part two focuses on photoemission techniques, with chapters covering ultraviolet photoemission spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and in situ spectroscopic ellipsometry for characterization of thin film growth. Finally, part three discusses alternative in situ characterization techniques. Chapters focus on topics such as ion beam surface characterization, real time in situ surface monitoring of thin film growth, deposition vapour monitoring and the use of surface x-ray diffraction for studying epitaxial film growth. With its distinguished editors and international team of contributors, In situ characterization of thin film growth is a standard reference for materials scientists and engineers in the electronics and photonics industries, as well as all those with an academic research interest in this area. Chapters review electron diffraction techniques, including the methodology for observations and measurements Discusses the principles and applications of photoemission techniques Examines alternative in situ characterisation techniques
In Situ Real-Time Characterization of Thin Films
| Author | : Orlando Auciello |
| Publisher | : John Wiley & Sons |
| Total Pages | : 282 |
| Release | : 2001 |
| Genre | : Science |
| ISBN | : 9780471241416 |
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An in-depth look at the state of the art of in situ real-time monitoring and analysis of thin films With thin film deposition becoming increasingly critical in the production of advanced electronic and optical devices, scientists and engineers working in this area are looking for in situ, real-time, structure-specific analytical tools for characterizing phenomena occurring at surfaces and interfaces during thin film growth. This volume brings together contributed chapters from experts in the field, covering proven methods for in situ real-time analysis of technologically important materials such as multicomponent oxides in different environments. Background information and extensive references to the current literature are also provided. Readers will gain a thorough understanding of the growth processes and become acquainted with both emerging and more established methods that can be adapted for in situ characterization. Methods and their most useful applications include: * Low-energy time-of-flight ion scattering and direct recoil spectroscopy (TOF-ISRAS) for studying multicomponent oxide film growth processes * Reflection high-energy electron diffraction (RHEED) for determining the nature of chemical reactions at film surfaces * Spectrometric ellipsometry (SE) for use in the analysis of semiconductors and other multicomponent materials * Reflectance spectroscopy and transmission electron microscopy for monitoring epitaxial growth processes * X-ray fluorescence spectroscopy for studying surface and interface structures * And other cost-effective techniques for industrial application
Epitaxial Growth of Complex Metal Oxides
| Author | : Gertjan Koster |
| Publisher | : Woodhead Publishing |
| Total Pages | : 534 |
| Release | : 2022-04-22 |
| Genre | : Science |
| ISBN | : 0081029462 |
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Epitaxial Growth of Complex Metal Oxides, Second Edition reviews techniques and recent developments in the fabrication quality of complex metal oxides, which are facilitating advances in electronic, magnetic and optical applications. Sections review the key techniques involved in the epitaxial growth of complex metal oxides and explore the effects of strain and stoichiometry on crystal structure and related properties in thin film oxides. Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films, including optoelectronics, batteries, spintronics and neuromorphic applications. This new edition has been fully updated, with brand new chapters on topics such as atomic layer deposition, interfaces, STEM-EELs, and the epitaxial growth of multiferroics, ferroelectrics and nanocomposites. Examines the techniques used in epitaxial thin film growth for complex oxides, including atomic layer deposition, sputtering techniques, molecular beam epitaxy, and chemical solution deposition techniques Reviews materials design strategies and materials property analysis methods, including the impacts of defects, strain, interfaces and stoichiometry Describes key applications of epitaxially grown metal oxides, including optoelectronics, batteries, spintronics and neuromorphic applications
Thin Film Metal-Oxides
| Author | : Shriram Ramanathan |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 344 |
| Release | : 2009-12-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1441906649 |
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Thin Film Metal-Oxides provides a representative account of the fundamental structure-property relations in oxide thin films. Functional properties of thin film oxides are discussed in the context of applications in emerging electronics and renewable energy technologies. Readers will find a detailed description of deposition and characterization of metal oxide thin films, theoretical treatment of select properties and their functional performance in solid state devices, from leading researchers. Scientists and engineers involved with oxide semiconductors, electronic materials and alternative energy will find Thin Film Metal-Oxides a useful reference.
Ion Beam-based Characterization of Multicomponent Oxide Thin Films and Thin Film Layered Structures
| Author | : |
| Publisher | : |
| Total Pages | : 30 |
| Release | : 1992 |
| Genre | : |
| ISBN | : |
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Fabrication of thin film layered structures of multi-component materials such as high temperature superconductors, ferroelectric and electro-optic materials, and alloy semiconductors, and the development of hybrid materials requires understanding of film growth and interface properties. For High Temperature Superconductors, the superconducting coherence length is extremely short (5--15 [Angstrom]), and fabrication of reliable devices will require control of film properties at extremely sharp interfaces; it will be necessary to verify the integrity of thin layers and layered structure devices over thicknesses comparable to the atomic layer spacing. Analytical techniques which probe the first 1--2 atomic layers are therefore necessary for in-situ characterization of relevant thin film growth processes. However, most surface-analytical techniques are sensitive to a region within 10--40 [Angstrom] of the surface and are physically incompatible with thin film deposition and are typically restricted to ultra high vacuum conditions. A review of ion beam-based analytical methods for the characterization of thin film and multi-layered thin film structures incorporating layers of multicomponent oxides is presented. Particular attention will be paid to the use of time-of-flight techniques based on the use of 1- 15 key ion beams which show potential for use as nondestructive, real-time, in-situ surface diagnostics for the growth of multicomponent metal and metal oxide thin films.
Studies of Thin-film Growth, Adsorption, and Oxidation by in Situ, Real-time, and Ex Situ Ion Beam Analysis
| Author | : |
| Publisher | : |
| Total Pages | : 25 |
| Release | : 1993 |
| Genre | : |
| ISBN | : |
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We have developed a time-of-flight (TOF) ion scattering and direct recoil spectrometer (ISS/DRS) to study the surface composition and reconstruction of metals, metal-oxides, and semiconductors, and to provide in situ characterization of the thin-film deposition process. In situ, real-time study of Pb, Zr, and Ru ultrathin films produced by ion beam sputter deposition is presented as demonstration of pulsed ion beam surface analysis (PIBSA) as a means of characterizing monolayer and submonolayer growth, both in UHV and in mTorr oxygen background. The capability of performing surface analysis at pressures>10−3 Torr is unique to pulsed ion beam surface analysis among surface analytical methods and enables the in situ monitoring of oxide thin-film growth processes and surface-gas phase reactions. Using angular-resolved ISS (ARISS), combined with Auger electron spectroscopy (AES), we studied the oxygen adsorption and reconstruction of (001) oriented InSb thin-film surfaces. It was found that the adsorption of molecular oxygen on the InSb (001) surface is consistent with the Langmuir model. Oxygen adsorption preferentially occurs on the antimony sites corresponding to the extension of the lattice into the vacuum and reduces the inward contraction of the first two layers of the clean InSb (001) surface relative to the bulk atomic spacing.
Ultrahigh Vacuum Metalorganic Chemical Vapor Deposition and in Situ Characterization of Nanoscale Titanium Dioxide Films
| Author | : Polly Wanda Chu |
| Publisher | : |
| Total Pages | : 434 |
| Release | : 1994 |
| Genre | : |
| ISBN | : |
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Thin titanium dioxide films were produced by metalorganic chemical vapor deposition on sapphire(0001) in an ultrahigh vacuum (UHV) chamber. A method was developed for producing controlled submonolayer depositions from titanium isopropoxide precursor. Film thickness ranged from 0.1 to 2.7 nm. In situ X-ray photoelectron spectroscopy (XPS) was used to determine film stoichiometry with increasing thickness. The effect of isothermal annealing on desorption was evaluated. Photoelectron peak shapes and positions from the initial monolayers were analyzed for evidence of interface reaction. Deposition from titanium isopropoxide is divided into two regimes: depositions below and above the pyrolysis temperature. This temperature was determined to be 300 deg C. Controlled submonolayers of titanium oxide were produced by cycles of dosing with titanium isopropoxide vapor below and annealing above 300 deg C. Precursor adsorption below the pyrolysis temperature was observed to saturate after 15 minutes of dosing. The quantity absorbed was shown to have an upper limit of one monolayer. The stoichiometry of thin films grown by the cycling method were determined to be TiO2. Titanium dioxide film stoichiometry was unaffected by isothermal annealing at 700 deg C. Annealing produced a decrease in film thickness. This was explained as due to desorption. Desorption ceased at approximately 2.5 to 3 monolayers, suggesting bonding of the initial monolayers of film to sapphire is stronger than to itself. Evidence of sapphire reduction at the interface by the depositions was not observed. The XPS O is peak shifted with increased film thickness. The shifts were consistent with oxygen in sapphire and titanium dioxide having different O is photoelectron peak positions. Simulations showed the total shifts for thin films ranging in thickness of 0.1 to 2.7 nm to be -0.99 to -1.23 eV. Thick films were produced for comparison.
Thin Films and Heterostructures for Oxide Electronics
| Author | : Satishchandra B. Ogale |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 416 |
| Release | : 2005-11-21 |
| Genre | : Technology & Engineering |
| ISBN | : 0387260897 |
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Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Veterinary Materia Medica and Therapeutics
| Author | : BiblioBazaar |
| Publisher | : Nabu Press |
| Total Pages | : 892 |
| Release | : 2011-05 |
| Genre | : |
| ISBN | : 9781172724673 |
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This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally important, and despite the imperfections, have elected to bring it back into print as part of our continuing commitment to the preservation of printed works worldwide. We appreciate your understanding of the imperfections in the preservation process, and hope you enjoy this valuable book.
