Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Highly Integrated D Band Millimeter Wave Circuits And Systems For Imaging And Radar Applications PDF full book. Access full book title Highly Integrated D Band Millimeter Wave Circuits And Systems For Imaging And Radar Applications.
| Author | : Erick Aguilar |
| Publisher | : |
| Total Pages | : |
| Release | : 2021 |
| Genre | : |
| ISBN | : 9783843946780 |
| Author | : David del Rio |
| Publisher | : Springer |
| Total Pages | : 255 |
| Release | : 2018-07-07 |
| Genre | : Technology & Engineering |
| ISBN | : 3319932810 |
This book presents design methods and considerations for digitally-assisted wideband millimeter-wave transmitters. It addresses comprehensively both RF design and digital implementation simultaneously, in order to design energy- and cost-efficient high-performance transmitters for mm-wave high-speed communications. It covers the complete design flow, from link budget assessment to the transistor-level design of different RF front-end blocks, such as mixers and power amplifiers, presenting different alternatives and discussing the existing trade-offs. The authors also analyze the effect of the imperfections of these blocks in the overall performance, while describing techniques to correct and compensate for them digitally. Well-known techniques are revisited, and some new ones are described, giving examples of their applications and proving them in real integrated circuits.
| Author | : Austin Ying-Kuang Chen |
| Publisher | : |
| Total Pages | : |
| Release | : 2010 |
| Genre | : |
| ISBN | : |
A 68-82 GHz highly integrated, wideband linear receiver is demonstrated. The receiver achieves a maximum gain of 28.1 dB, a NF of 8 dB, and an input-referred 1 dB gain compression point (IP1dB) of -23.6 dBm at 77 GHz while dissipating 413 mW. The receiver enables applications within the band to share and reuse the same front-end chip. To further explore the opportunity at higher frequency, an 81-92.6 GHz low-noise amplifier is demonstrated with a gain of 21 dB, a NF of 9 dB, and an IP1dB of -18.8 dBm. On the other hand, critical transmitter building blocks, such as an up-conversion mixer has also been investigated. A highly linear double-balanced active up-conversion mixer based upon multi-tanh triplet technique has been validated to show a single sideband (SSB) power conversion gain of 5.1 dB and an output-referred 1 dB gain compression point (OP1dB) of -5.8 dBm at 77 GHz. Finally, a high-power signal generation at submillimeter-wave is demonstrated and fabricated in InGaAs/InP D-HBT technology. The second harmonic push-push oscillator shows an output power of 0 dBm at 200 GHz, which opens a new frontier for applications, such as weather observation radar, chemical, and tumor detections, and next-generation optical systems. By using an even higher order harmonic generation, THz signal sources can be expected in the very near future.
| Author | : Chun-Cheng Wang |
| Publisher | : |
| Total Pages | : 115 |
| Release | : 2012 |
| Genre | : |
| ISBN | : 9781267256614 |
Historically, monolithic microwave integrated circuits (MMICs) have been designed using III-V semiconductor technologies, such as GaAs and InP. In recent years, the number of publications reporting silicon-based millimeter-wave (mm-wave) transmitter, receivers, and transceivers has grown steadily. For mm-wave applications including gigabit/s point-to-point links (57-64 GHz), automotive radar (77-81 GHz) and imaging (94 GHz) to reach mainstream market, the cost, size and power consumption of silicon-based solution has to be significantly below what is being achieved today using compound semiconductor technology. This dissertation focuses the effort of designing and implementing silicon-based solutions through circuit- and system-level innovation for applications in the W-band frequency band (75-110GHz), in particular, 94GHz passive imaging band. A W-band front-end receiver in 65nm CMOS based entirely on slow-wave CPW (SW-CPW) with frequency tripler as the LO is designed and measured. The receiver achieves a total gain of 35-dB, -3dB-BW of 12 GHz, a NF of 9-dB, a P1-dB of -40dBm, a low power consumption of 108mW under 1.2/0.8V. This front-end receiver chipset in conjuction with an analog back-end can be used to form a radiometer. Leveraging the work done in 65nm CMOS, the first integrated 2x2 focal-plane array (FPA) for passive imaging is implemented in a 0.18um SiGe BiCMOS process (fT/fmax=200/180GHz). The FPA incorporates four Dicke-type receivers. Each receiver employs a direct-conversion architecture consisting of an on-chip slot dipole antenna, an SPDT switch, a lower noise amplifier, a single-balanced mixer, an injection-locked frequency tripler (ILFT), a zero-IF variable gain amplifier, a power detector, an active bandpass filter and a synchronous demodulator. The LO signal is generated by a shared Ka-band PLL and distributed symmetrically to four ILFTs. This work demonstrates the highest level of integration of any silicon-based systems in the 94GHz imaging band. Finally, the main design bottleneck of any wireless transceiver system, the frequency synthesizer/phase-locked loop is investigated. Two monolithically integrated W-band frequency synthesizers are presented. Implemented in a 0.18um SiGe BiCMOS, both architectures incorporate the same 30.3-33.8GHz PLL core. One synthesizer uses an injection-locked frequency tripler (ILFT) with locking range of 92.8-98.1GHz and the other employ a harmonic-based frequency tripler (HBFT) with 3-dB bandwidth of 10.5GHz from 90.9-101.4GHz, respectively. The frequency synthesizer is suitable for integration in mm-wave phased array and multi-pixel systems such as W-band radar/imaging and 120GHz Gb/s communication.
| Author | : Kenneth J. Button |
| Publisher | : Elsevier |
| Total Pages | : 429 |
| Release | : 1985-11-28 |
| Genre | : Technology & Engineering |
| ISBN | : 0323150616 |
Infrared and Millimeter Waves, Volume 14: Millimeter Components and Techniques, Part V is concerned with millimeter-wave guided propagation and integrated circuits. In addition to millimeter-wave planar integrated circuits and subsystems, this book covers transducer configurations and integrated-circuit techniques, antenna arrays, optoelectronic devices, and tunable gyrotrons. Millimeter-wave gallium arsenide (GaAs) IMPATT diodes are also discussed. This monograph is comprised of six chapters and begins with a description of millimeter-wave integrated-circuit transducers, focusing on various designs and trade-offs and providing hardware examples. The next chapter deals with millimeter-wave planar integrated circuits based on three transmission media: microstrip lines, suspended strip lines, and fin lines. Various transmission media and substrates are first considered, followed by design considerations and performances of several integrated-circuit components, including mixers, IMPATT oscillators, frequency multipliers, switches, filters, couplers, and ferrite devices. A few selected subsystems are also discussed. The following chapters look at planar millimeter-wave antenna arrays; optoelectronic devices for millimeter waves; and the state of the art in GaAs IMPATT diode technology for both cw and pulsed modes of operation. The final chapter is devoted to the gyrotron or electron cyclotron resonance maser. This text will be a useful resource for physicists and electronics and electrical engineers.
| Author | : Kenneth J. Button |
| Publisher | : Elsevier |
| Total Pages | : 379 |
| Release | : 2014-04-08 |
| Genre | : Technology & Engineering |
| ISBN | : 032315297X |
Infrared and Millimeter Waves is a series of books that compiles the work of several authors, with each volume focusing on certain aspects of infrared and millimeter waves, such as sources of radiation, instrumentation, and millimeter systems. This book concerns itself with millimeter systems. Comprised of seven chapters, this book discusses several systems that involve the use of millimeter waves, such as radars and missile guidance systems. The first chapter provides a comprehensive overview of millimeter waves, while the succeeding chapter discusses several technologies that involve millimeter systems, such as radar, missile guidance, and imaging systems. This book will be of great use to researchers and professionals whose work involves infrared and millimeter waves.
| Author | : Maurizio Bozzi |
| Publisher | : Elsevier |
| Total Pages | : 300 |
| Release | : 2017-02-01 |
| Genre | : Technology & Engineering |
| ISBN | : 9780124166639 |
A variety of novel applications in the millimeter-wave frequency range have been developed in the last few years: for example, wireless LAN at 60 GHz, automotive radars at 77 GHz, and imaging systems at 94 GHz. The development of these applications has stimulated the implementation of a wide range of novel components and circuits operating at millimeter-wave frequencies. Both industry and academia have devoted significant effort to the development of novel technologies and efficient integration techniques, with the aim of improving the quality of millimeter-wave systems, decreasing their cost and improving their reliability. This book provides comprehensive coverage of all aspects relating to components, circuits and system integration at millimeter wave level. The book is divided into four parts: technologies for passive components; technologies and materials for active devices and circuits; complete system integration strategies; and major millimeter-wave applications. For the first time, this book offers a broad view on various mm-wave applications and advanced technologies with their relative merits, to optimize device selection, system integration and packaging for high-performance, low-cost systems. Each chapter is authored by recognized academic and industrial authorities in the field of advanced devices, components and system integration at mm-wave frequency. The book covers a wide range of technologies and topologies, evaluating their merits and offering guidance on component selection, circuit design and system integration. It describes in detail the most important mm-wave applications and design of application-specific systems. With this book you will be able to: Develop an application specific mm-wave system from concept to prototyping, through to final design, integration and testing Develop advanced capabilities and understanding to select optimum device technology for active and passive circuits Use module integration topology and technique to successfully design a compact and high performance system within a given space and financial budget Learn about the state of the art in mm-wave integration and technologies and techniques, with their relative performances, for mm-wave components, circuits and modules design, performance optimization and integrated packaging Select the proper technology for implementing mm-wave passive components and antennas Choose the correct semiconductor technology for active devices and circuits Select circuit topology, design and development for high performance active devices and integrated circuits Choose and implement the most suitable integration strategy for mm-wave modules and systems Gain a deep knowledge of major applications and research trends at mm-waves Understand the issues related to mm-wave device and circuit technologies with integration and packaging Comprehensive Reference: all aspects relating to components, circuits and system integration at the millimeter wave level.are covered Advice and guidance on component and circuit design, selection and integration State of the art knowledge: Covers major applications and current and future research trends Written by experts in the field: A range of contributors from industry and academia provide insight and the right balance of theory and application
| Author | : Mehmet Parlak |
| Publisher | : |
| Total Pages | : 150 |
| Release | : 2012 |
| Genre | : |
| ISBN | : 9781267644862 |
The power dissipation and cost of the next generation pulse radar beamforming systems needs to be reduced for the imaging and surveillance sensors. This research work aims at developing and innovating the next generation, mobile hand-held, high performance radar systems for outdoor surveillance applications, i.e. pedestrian detection sensor. Integrating the low cost millimeter-wave (mm-wave) imaging array platforms with advanced analog/baseband signal processing on silicon is proposed for reducing the power dissipation, area, and cost of the next generation radar modules and for the wide deployment of the sensors that are capable of detecting the vehicles and humans with a good range/angle resolution and maximum detection range at the same time. The system concepts of a bidirectional beamforming pulse compression radar system, the design and measurement results of the bidirectional mm-wave front-end circuits at the front-end and the design and measurement results of a baseband/analog signal processing sub-system and its blocks are presented, although the pulse compression radar is not fully demonstrated. Low noise figure, low power consumption, high linearity and high bandwidth in circuit level is maintained to provide the maximum detection distance, good range and angle resolution for the overall system level. The analog signal processing system is demonstrated in 90 nm CMOS process. The baseband circuitry is designed as a pulse compression radar system that exhibits the autocorrelation properties of the polyphase codes, maximizes the sensitivity and resolution of a pulse radar system and alleviates speed and resolution requirements of the ADC via an analog correlator while minimizing the power consumption. The baseband circuitry includes a Friis loss tracking VGA for high dynamic range, a correlator /integrator circuit, a comparator, and offset calibration circuits. The different lengths of radar codes are given as inputs to the baseband circuitry chip to find the time of flight. Next, novel silicon millimeter-wave frequency circuits are implemented to reduce the number of elements in a beamforming front-end, although not specifically designed for the radar system front-end. Bidirectional circuits are motivated by the requirements of scalable microwave and millimeter-wave phased array transceivers. The first bidirectional amplifier in silicon/silicon-germanium is reported to date - a W-band bidirectional cascaded constructive wave amplifier (BCCWA) in a 0.13[mu]m SiGe BiCMOS technology which operates as either an LNA or PA one at a time. The first phase shifter/variable gain amplifier at W-band in a 0.13 [mu]m SiGe BiCMOS technology is also reported to date. The circuit can operate both as a continuous variable gain amplifier and phase shifter one at a time. The first dual-channel distributed amplifier (DA) is reported to date. The DA is proposed for a highly linear multiple-input receiver front-end and can replace two LNAs at the same time. Next, millimeter-wave circuits in 45-nm CMOS SOI process are presented. The design and state-of-the-art measurement results of millimeter-wave (Q-band) balanced resistive ring mixer, LNA, and SPDT switch are demonstrated. The results indicate that 45-nm CMOS SOI demonstrates the lowest mixer conversion loss, lowest switch insertion loss, and lowest LNA noise figure compared to other CMOS processes.
| Author | : Ioannis Sarkas |
| Publisher | : |
| Total Pages | : |
| Release | : 2013 |
| Genre | : |
| ISBN | : |
| Author | : Muhammad Maruf Hossain |
| Publisher | : Cuvillier Verlag |
| Total Pages | : 136 |
| Release | : 2016-10-27 |
| Genre | : Technology & Engineering |
| ISBN | : 3736983352 |
A variety of commercial and defense applications are expected to have sub-terahertz (THz) and mm-wave integrated circuits in the near future. Silicon (Si) technologies partly meet the demands but are limited in their power handling capability. III-V technologies, in particular InP, offer higher output power but fall short of their Si counterparts if it comes to integration density and complexity. Thus, research on hetero-integration of Si with InP has gained increasing interest. This work focuses on MMIC signal sources as important building blocks that are based on FBH’s 0.8 μm InP-DHBT transferred-substrate (TS) process, offering an InP-DHBT as well as an InP-on-BiCMOS version. This process is unique and provides interesting possibilities to realize integrated circuits in the frequency range between 100 GHz and more than 300 GHz. First, fundamental sources at 96 GHz and 197 GHz are presented. They deliver +9 dBm and 0 dBm output power with 25% and 0.5% overall DC-to-RF efficiency, respectively. Furthermore, 162 GHz and 270 GHz push-push sources are demonstrated utilizing an InP-on-BiCMOS process, which achieve -4.5 dBm and -9.5 dBm output power. Subsequently, multiplier-based signal sources are demonstrated including a full G-band (140-220 GHz) frequency doubler, which delivers +8.2 dBm at 180 GHz and more than +5 dBm in the range 160-200 GHz. The doubler circuit exhibits a power efficiency of 16% in this frequency range. Also, the highest frequency is reached by a wideband 328 GHz quadrupler, with -7 dBm output power at 325 GHz and 0.5% DC-to-RF efficiency. The final part is devoted to hetero-integrated circuits and the necessary design considerations. Two 250 GHz and 330 GHz sources are demonstrated that deliver -1.6 dBm and -12 dBm output power, respectively. These are the first hetero-integrated signal sources in this frequency range reported so far.
