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Semiconductor Lasers I

Semiconductor Lasers I
Author: Eli Kapon
Publisher: Academic Press
Total Pages: 467
Release: 1999-01-12
Genre: Science
ISBN: 0080540929

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This book covers the device physics of semiconductor lasers in five chapters written by recognized experts in this field. The volume begins by introducing the basic mechanisms of optical gain in semiconductors and the role of quantum confinement in modern quantum well diode lasers. Subsequent chapters treat the effects of built-in strain, one of the important recent advances in the technology of these lasers, and the physical mechanisms underlying the dynamics and high speed modulation of these devices. The book concludes with chapters addressing the control of photon states in squeezed-light and microcavity structures, and electron states in low dimensional quantum wire and quantum dot lasers. The book offers useful information for both readers unfamiliar with semiconductor lasers, through the introductory parts of each chapter, as well as a state-of-the-art discussion of some of the most advanced semiconductor laser structures, intended for readers engaged in research in this field. This book may also serve as an introduction for the companion volume, Semiconductor Lasers II: Materials and Structures, which presents further details on the different material systems and laser structures used for achieving specific diode laser performance features. Introduces the reader to the basics of semiconductor lasers Covers the fundamentals of lasing in semiconductors, including quantum confined and microcavity structures Beneficial to readers interested in the more general aspects of semiconductor physics and optoelectronic devices, such as quantum confined heterostructures and integrated optics Each chapter contains a thorough introduction to the topic geared toward the non-expert, followed by an in-depth discussion of current technology and future trends Useful for professionals engaged in research and development Contains numerous schematic and data-containing illustrations


High Speed Diode Lasers

High Speed Diode Lasers
Author: Sergei A Gurevich
Publisher: World Scientific
Total Pages: 215
Release: 1998-01-15
Genre: Science
ISBN: 9814497061

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This book is composed of seven invited papers which present the current status of high speed diode lasers. Fast carrier and photon dynamics in directly modulated MQW lasers is analyzed and novel design approaches are considered which were critical for the demonstration and record of 40 GHz modulation bandwidth. Attention is centered on the challenges in creation of high speed and low chirp single mode DFB lasers. Recent progress in mode-locked diode lasers is covered, specifically by the examples of 160 fs pulse generation and appearance of microwave pulse repetition rates. Future trends in increasing of high speed laser performance are also examined.


High-speed Modulation of Semiconductor Lasers and Properties of Silver-coated Quantum-dot Lasers

High-speed Modulation of Semiconductor Lasers and Properties of Silver-coated Quantum-dot Lasers
Author: Andrew J. Millard
Publisher:
Total Pages:
Release: 2010
Genre:
ISBN:

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There is currently a great deal of research interest in plasmonic lasers, in which the optical field is confined by a metal waveguide instead of the more traditional dielectric waveguide. These devices show great promise because of their strong optical confinement and scalability below the diffraction limit. Both of these attributes are critical to future optical interconnect and optical transmitter photonic integrated circuit applications, requiring large integration density of devices and minimal cross-talk between channels. To attain large integration density, there is also a desire for high-speed lasers that have a large direct modulation bandwidth and eliminate the need for external modulators. Nanoplasmonic lasers and their high-speed characteristics are thus an important topic of research. In this thesis, experimental techniques for characterizing the high-speed performance of a semiconductor laser using electrical modulation and relative intensity noise (RIN) spectrum measurement are presented. Reasonable agreement is shown between the results from the two methods, and the pros and cons of each are described. Measured properties of newly fabricated silver-coated and uncoated quantum-dot Fabry-Pérot lasers are also presented. Room temperature, continuous-wave lasing is demonstrated in several silver-coated devices. The modal gain and group index are extracted from observation of the below threshold amplified spontaneous emission (ASE) spectrum. A large group index of 3.9 is found for the silver-coated lasers with a waveguide width of 1.4 ℗æm (compared to 3.5 for the uncoated lasers), possibly indicating a plasmonic effect caused by the silver coating. An even larger group index of approximately 4.5 is observed in several silver-coated LEDs with a waveguide width of 10 ℗æm. Evidence for the presence of multiple lasing transverse modes for a 1.4 ℗æm waveguide width silver-coated laser is presented and discussed. Electrical modulation and RIN measurements of the uncoated and silver-coated lasers are also presented.


Analysis of High-speed Modulation of Semiconductor Lasers by Electron Heating

Analysis of High-speed Modulation of Semiconductor Lasers by Electron Heating
Author: Chung Yu Wu
Publisher:
Total Pages: 0
Release: 1995
Genre:
ISBN:

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This thesis reports on a comprehensive study using microwave field to vary the electron temperature (energy) in the active region of a semiconductor laser, and thereby to indirectly change the optical transition and to achieve high speed modulation. This modulation scheme is termed the "Electron Heating Modulation". The objective is to perform a feasibility study of this modulation scheme, and to identify the principal difference and limitations in comparison with the traditional scheme. The Auger recombination is not included in this preliminary study. The gain calculation for a bulk semiconductor laser, taking into account both the electron concentration and its temperature, demonstrates that the transparency carrier concentration and the differential gain are both strongly dependent of the electron temperature. In view of the fact that the modulation bandwidth of conventional Current Injection Modulation is limited by the spontaneous recombination time, a new modulation method combining the Electron Heating Modulation and the Current Injection Modulation, is an intriguing alternative and deserves a thorough evaluation. This is attempted here. (Abstract shortened by UMI.).