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High-Speed Devices and Circuits with THz Applications

High-Speed Devices and Circuits with THz Applications
Author: Jung Han Choi
Publisher: CRC Press
Total Pages: 261
Release: 2017-09-19
Genre: Science
ISBN: 1351831577

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Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.


High-Speed Devices and Circuits with THz Applications

High-Speed Devices and Circuits with THz Applications
Author: Jung Han Choi
Publisher: CRC Press
Total Pages: 258
Release: 2017-09-19
Genre: Science
ISBN: 1466590122

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Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work: Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.


Advanced High Speed Devices

Advanced High Speed Devices
Author: Michael S. Shur
Publisher: World Scientific
Total Pages: 203
Release: 2010
Genre: Science
ISBN: 9814287873

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Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback. Sample Chapter(s). Chapter 1: Simulation and Experimental Results on Gan Based Ultra-Short Planar Negative Differential Conductivity Diodes for THZ Power Generation (563 KB). Contents: Simulation and Experimental Results on GaN Basee Ultra-Short Planar Negative Differential Conductivity Diodes for THz Power Generation (B Aslan et al.); Millimeter Wave to Terahertz in CMOS (K K O S Sankaran et al.); Surface Acoustic Wave Propagation in GaN-On-Sapphire Under Pulsed Sub-Band Ultraviolet Illumination (V S Chivukula et al.); The First 70nm 6-Inch GaAs PHEMT MMIC Process (H Karimy et al.); Performance of MOSFETs on Reactive-Ion-Etched GaN Surfaces (K Tang et al.); GaN Transistors for Power Switching and Millimeter-Wave Applications (T Ueda et al.); Bi-Directional Scalable Solid-State Circuit Breakers for Hybrid-Electric Vehicles (D P Urciuoli & V Veliadis); and other papers. Readership: Electronic engineers, solid state physicists, graduate students studying physics or electrical engineering.


High Performance Devices

High Performance Devices
Author: Robert E. Leoni
Publisher: Selected Topics in Electronics
Total Pages: 316
Release: 2005
Genre: Science
ISBN: 9789812561961

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This volume presents state-of-the-art works from top academic and research institutions in the areas of high performance semiconductor materials, devices, and circuits. A broad coverage of topics relating to high performance devices and circuits is featured here. There are 46 contributed papers covering a wide range of materials, device types, and applications. These papers describe the results of ongoing research in three general areas: high speed technologies for advanced mixed signal and terahertz applications, advanced technologies for high performance optical links and light sources, and high power density and high efficiency technologies for next generation microwave front ends and power electronics.


Design of High-speed Communication Circuits

Design of High-speed Communication Circuits
Author: Ramesh Harjani
Publisher: World Scientific
Total Pages: 233
Release: 2006
Genre: Technology & Engineering
ISBN: 9812774580

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MOS technology has rapidly become the de facto standard for mixed-signal integrated circuit design due to the high levels of integration possible as device geometries shrink to nanometer scales. The reduction in feature size means that the number of transistor and clock speeds have increased significantly. In fact, current day microprocessors contain hundreds of millions of transistors operating at multiple gigahertz. Furthermore, this reduction in feature size also has a significant impact on mixed-signal circuits. Due to the higher levels of integration, the majority of ASICs possesses some analog components. It has now become nearly mandatory to integrate both analog and digital circuits on the same substrate due to cost and power constraints. This book presents some of the newer problems and opportunities offered by the small device geometries and the high levels of integration that is now possible. The aim of this book is to summarize some of the most critical aspects of high-speed analog/RF communications circuits. Attention is focused on the impact of scaling, substrate noise, data converters, RF and wireless communication circuits and wireline communication circuits, including high-speed I/O. Contents: Achieving Analog Accuracy in Nanometer CMOS (M P Flynn et al.); Self-Induced Noise in Integrated Circuits (R Gharpurey & S Naraghi); High-Speed Oversampling Analog-to-Digital Converters (A Gharbiya et al.); Designing LC VCOs Using Capacitive Degeneration Techniques (B Jung & R Harjani); Fully Integrated Frequency Synthesizers: A Tutorial (S T Moon et al.); Recent Advances and Design Trends in CMOS Radio Frequency Integrated Circuits (D J Allstot et al.); Equalizers for High-Speed Serial Links (P K Hanumolu et al.); Low-Power, Parallel Interface with Continuous-Time Adaptive Passive Equalizer and Crosstalk Cancellation (C P Yue et al.). Readership: Technologists, scientists, and engineers in the field of high-speed communication circuits. It can also be used as a textbook for graduate and advanced undergraduate courses.


Nanoelectronic Device Applications Handbook

Nanoelectronic Device Applications Handbook
Author: James E. Morris
Publisher: CRC Press
Total Pages: 940
Release: 2017-11-22
Genre: Technology & Engineering
ISBN: 1466565241

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Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.


High-speed Integrated Circuit Technology

High-speed Integrated Circuit Technology
Author: Mark J. W. Rodwell
Publisher: World Scientific
Total Pages: 374
Release: 2001
Genre: Technology & Engineering
ISBN: 9789812810014

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This book reviews the state of the art of very high speed digital integrated circuits. Commercial applications are in fiber optic transmission systems operating at 10, 40, and 100 Gb/s, while the military application is ADCs and DACs for microwave radar. The book contains detailed descriptions of the design, fabrication, and performance of wideband Si/SiGe-, GaAs-, and InP-based bipolar transistors. The analysis, design, and performance of high speed CMOS, silicon bipolar, and III-V digital ICs are presented in detail, with emphasis on application in optical fiber transmission and mixed signal ICs. The underlying physics and circuit design of rapid single flux quantum (RSFQ) superconducting logic circuits are reviewed, and there is extensive coverage of recent integrated circuit results in this technology. Contents: Preface (M J W Rodwell); High-Speed and High-Data-Bandwidth Transmitter and Receiver for Multi-Channel Serial Data Communication with CMOS Technology (M Fukaishi et al.); High-Performance Si and SiGe Bipolar Technologies and Circuits (M Wurzer et al.); Self-Aligned Si BJT/SiGe HBT Technology and Its Application to High-Speed Circuits (K Washio); Small-Scale InGaP/GaAs Heterojunction Bipolar Transistors for High-Speed and Low-Power Integrated-Circuit Applications (T Oka et al.); Prospects of InP-Based IC Technologies for 100-Gbit/S-Class Lightwave Communications Systems (T Enoki et al.); Scaling of InGaAs/InAlAs HBTs for High Speed Mixed-Signal and mm-Wave ICs (M J W Rodwell); Progress Toward 100 GHz Logic in InP HBT IC Technology (C H Fields et al.); Cantilevered Base InP DHBT for High Speed Digital Applications (A L Gutierrez-Aitken et al.); RSFQ Technology: Physics and Devices (P Bunyk et al.); RSFQ Technology: Circuits and Systems (D K Brock). Readership: Researchers, industrialists and academics in electrical and electronic engineering.


Ultra High-Speed CMOS Circuits

Ultra High-Speed CMOS Circuits
Author: Sam Gharavi
Publisher: Springer Science & Business Media
Total Pages: 111
Release: 2011-09-25
Genre: Technology & Engineering
ISBN: 1461403057

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The book covers the CMOS-based millimeter wave circuits and devices and presents methods and design techniques to use CMOS technology for circuits operating beyond 100 GHz. Coverage includes a detailed description of both active and passive devices, including modeling techniques and performance optimization. Various mm-wave circuit blocks are discussed, emphasizing their design distinctions from low-frequency design methodologies. This book also covers a device-oriented circuit design technique that is essential for ultra high speed circuits and gives some examples of device/circuit co-design that can be used for mm-wave technology.


Novel Advances in Microsystems Technologies and Their Applications

Novel Advances in Microsystems Technologies and Their Applications
Author: Laurent A. Francis
Publisher: CRC Press
Total Pages: 637
Release: 2017-07-28
Genre: Technology & Engineering
ISBN: 1351832077

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Microsystems technologies have found their way into an impressive variety of applications, from mobile phones, computers, and displays to smart grids, electric cars, and space shuttles. This multidisciplinary field of research extends the current capabilities of standard integrated circuits in terms of materials and designs and complements them by creating innovative components and smaller systems that require lower power consumption and display better performance. Novel Advances in Microsystems Technologies and their Applications delves into the state of the art and the applications of microsystems and microelectronics-related technologies. Featuring contributions by academic and industrial researchers from around the world, this book: Examines organic and flexible electronics, from polymer solar cell to flexible interconnects for the co-integration of micro-electromechanical systems (MEMS) with complementary metal oxide semiconductors (CMOS) Discusses imaging and display technologies, including MEMS technology in reflective displays, the fabrication of thin-film transistors on glass substrates, and new techniques to display and quickly transmit high-quality images Explores sensor technologies for sensing electrical currents and temperature, monitoring structural health and critical industrial processes, and more Covers biomedical microsystems, including biosensors, point-of-care devices, neural stimulation and recording, and ultra-low-power biomedical systems Written for researchers, engineers, and graduate students in electrical and biomedical engineering, this book reviews groundbreaking technology, trends, and applications in microelectronics. Its coverage of the latest research serves as a source of inspiration for anyone interested in further developing microsystems technologies and creating new applications.


High Speed Semiconductor Devices

High Speed Semiconductor Devices
Author: H. Beneking
Publisher: Springer Science & Business Media
Total Pages: 276
Release: 1994-09-30
Genre: Technology & Engineering
ISBN: 9780412562204

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High Speed Semiconductor Devices is the first textbook to focus on this topic. It gives a comprehensive introduction suitable for advanced students of electrical engineering and physics. It is practically oriented considering both physical limits and technical feasibility. It is illustrated with extensive exercises, full solutions and worked examples that give practical insight to and extend the treatment of the text.