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Heterostructural Interface Modelling

Heterostructural Interface Modelling
Author: David J. Fisher
Publisher: Materials Research Forum LLC
Total Pages: 162
Release: 2019-10-25
Genre: Technology & Engineering
ISBN: 1644900475
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The interface structure of joined materials is a key factor in the development of high-tech components. The book reviews recent experimental and theoretical research in the area of modelling new types of joints and predicting the expected properties. Fields covered include lattice theory, semiconductor electronics, solid-state lithium-ion conductor, solid-state devices, filamentary growth of graphite, curved basal sheets of graphite, thermodynamic factors and lattice-matching criteria, minimisation of interface stresses due to misfit, epitaxial deposition, composite design, coincidence site lattice theory, ionic conductivity improvement by interfacial lattice strain, epitaxial thin-film systems, methods and software for identifying compatible material combinations. The book references 302 original resources and includes their direct web link for in-depth reading. Keywords: Interface Modelling, Lattice Theory, Semiconductor Electronics, Lithium-ion Conductor, Graphite Filaments, Graphite Sheets, Interface Stresses, Epitaxial Deposition, Composite Design, Coincidence-Site Lattice Theory, Ionic Conductivity, Interfacial Lattice Strain, Epitaxial Thin Films, Compatible-Material-Combination Software, Lattice-Matching to Silicon, Lattice-Matching to Smiconductors, Lattice-Matching to Sapphire, Lattice-Matching to Ceramics, Lattice-Matching to Metals, Lattice-Matching to Organic Materials.

Heterostructural Interface Modelling

Heterostructural Interface Modelling
Author: David J. Fisher
Publisher: Materials Research Forum LLC
Total Pages: 162
Release: 2019-10-25
Genre: Technology & Engineering
ISBN: 1644900467
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Download Heterostructural Interface Modelling Book in PDF, ePub and Kindle

The interface structure of joined materials is a key factor in the development of high-tech components. The book reviews recent experimental and theoretical research in the area of modelling new types of joints and predicting the expected properties. Fields covered include lattice theory, semiconductor electronics, solid-state lithium-ion conductor, solid-state devices, filamentary growth of graphite, curved basal sheets of graphite, thermodynamic factors and lattice-matching criteria, minimisation of interface stresses due to misfit, epitaxial deposition, composite design, coincidence site lattice theory, ionic conductivity improvement by interfacial lattice strain, epitaxial thin-film systems, methods and software for identifying compatible material combinations. The book references 302 original resources and includes their direct web link for in-depth reading. Keywords: Interface Modelling, Lattice Theory, Semiconductor Electronics, Lithium-ion Conductor, Graphite Filaments, Graphite Sheets, Interface Stresses, Epitaxial Deposition, Composite Design, Coincidence-Site Lattice Theory, Ionic Conductivity, Interfacial Lattice Strain, Epitaxial Thin Films, Compatible-Material-Combination Software, Lattice-Matching to Silicon, Lattice-Matching to Smiconductors, Lattice-Matching to Sapphire, Lattice-Matching to Ceramics, Lattice-Matching to Metals, Lattice-Matching to Organic Materials.

Analysis and Simulation of Heterostructure Devices

Analysis and Simulation of Heterostructure Devices
Author: Vassil Palankovski
Publisher: Springer Science & Business Media
Total Pages: 309
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3709105609
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The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures

IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures
Author: Alan Cocks
Publisher: Springer Science & Business Media
Total Pages: 309
Release: 2012-09-27
Genre: Technology & Engineering
ISBN: 9400749104
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This volume constitutes the proceedings of the IUTAM Symposium on Surface Effects in the Mechanics of Nanomaterials and Heterostructures, held in Beijing, 8-12 August, 2010. The symposium brought together the most active scientists working in this area from the fields of solid mechanics, composites, physics, and materials science and summarized the state-of-the-art research results with a view to advancing the frontiers of mechanics and materials physics. Nanomaterials and heterostructures have a large fraction of their atoms at surfaces and interfaces. These atoms see a different environment to those in the interior and can have a substantial effect on the overall mechanical and physical behaviour of a material. The last decade has witnessed a growing interest in the study of surfaces and how the surface behaviour couples with that of the bulk to determine the overall system response. The papers in this proceedings cover: extension of continuum mechanics and thermodynamics to the nano-scale; multiscale simulations; surface effects in monolithic nano-scale elements and nanostructures; mechanical and physical properties of nanomaterials and heterostructures; self-assembly, etc. The surface stress effect is inherently a multidisciplinary and fertile field; the Symposium truly reflects these features. This IUTAM Symposium was also dedicated to Professor Bhushan L Karihaloo of Cardiff University on his impending retirement, in recognition of his contributions to the fields of solid mechanics and nanomechanics, and to IUTAM activities in general.

C, H, N and O in Si and Characterization and Simulation of Materials and Processes

C, H, N and O in Si and Characterization and Simulation of Materials and Processes
Author: A. Borghesi
Publisher: Newnes
Total Pages: 580
Release: 2012-12-02
Genre: Technology & Engineering
ISBN: 044459633X
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Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells

Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells
Author: Wilfried G. J. H. M. van Sark
Publisher: Springer Science & Business Media
Total Pages: 588
Release: 2011-11-16
Genre: Technology & Engineering
ISBN: 3642222757
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Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.

Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author: Giovanni Agostini
Publisher: Newnes
Total Pages: 829
Release: 2013-04-11
Genre: Technology & Engineering
ISBN: 044459549X
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Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples. The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field Each chapter starts with a didactic introduction on the technique The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Encyclopedia of Interfacial Chemistry

Encyclopedia of Interfacial Chemistry
Author:
Publisher: Elsevier
Total Pages: 5276
Release: 2018-03-29
Genre: Science
ISBN: 0128098945
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Encyclopedia of Interfacial Chemistry: Surface Science and Electrochemistry, Seven Volume Set summarizes current, fundamental knowledge of interfacial chemistry, bringing readers the latest developments in the field. As the chemical and physical properties and processes at solid and liquid interfaces are the scientific basis of so many technologies which enhance our lives and create new opportunities, its important to highlight how these technologies enable the design and optimization of functional materials for heterogeneous and electro-catalysts in food production, pollution control, energy conversion and storage, medical applications requiring biocompatibility, drug delivery, and more. This book provides an interdisciplinary view that lies at the intersection of these fields. Presents fundamental knowledge of interfacial chemistry, surface science and electrochemistry and provides cutting-edge research from academics and practitioners across various fields and global regions

Synthesis, Modelling and Characterization of 2D Materials and their Heterostructures

Synthesis, Modelling and Characterization of 2D Materials and their Heterostructures
Author: Eui-Hyeok Yang
Publisher: Elsevier
Total Pages: 502
Release: 2020-06-19
Genre: Technology & Engineering
ISBN: 0128184760
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Synthesis, Modelling and Characterization of 2D Materials and Their Heterostructures provides a detailed discussion on the multiscale computational approach surrounding atomic, molecular and atomic-informed continuum models. In addition to a detailed theoretical description, this book provides example problems, sample code/script, and a discussion on how theoretical analysis provides insight into optimal experimental design. Furthermore, the book addresses the growth mechanism of these 2D materials, the formation of defects, and different lattice mismatch and interlayer interactions. Sections cover direct band gap, Raman scattering, extraordinary strong light matter interaction, layer dependent photoluminescence, and other physical properties. Explains multiscale computational techniques, from atomic to continuum scale, covering different time and length scales Provides fundamental theoretical insights, example problems, sample code and exercise problems Outlines major characterization and synthesis methods for different types of 2D materials