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Epitaxial Growth of Complex Metal Oxides

Epitaxial Growth of Complex Metal Oxides
Author: Gertjan Koster
Publisher: Woodhead Publishing
Total Pages: 534
Release: 2022-04-22
Genre: Science
ISBN: 0081029462

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Epitaxial Growth of Complex Metal Oxides, Second Edition reviews techniques and recent developments in the fabrication quality of complex metal oxides, which are facilitating advances in electronic, magnetic and optical applications. Sections review the key techniques involved in the epitaxial growth of complex metal oxides and explore the effects of strain and stoichiometry on crystal structure and related properties in thin film oxides. Finally, the book concludes by discussing selected examples of important applications of complex metal oxide thin films, including optoelectronics, batteries, spintronics and neuromorphic applications. This new edition has been fully updated, with brand new chapters on topics such as atomic layer deposition, interfaces, STEM-EELs, and the epitaxial growth of multiferroics, ferroelectrics and nanocomposites. Examines the techniques used in epitaxial thin film growth for complex oxides, including atomic layer deposition, sputtering techniques, molecular beam epitaxy, and chemical solution deposition techniques Reviews materials design strategies and materials property analysis methods, including the impacts of defects, strain, interfaces and stoichiometry Describes key applications of epitaxially grown metal oxides, including optoelectronics, batteries, spintronics and neuromorphic applications


Growth and Properties of Ultrathin Epitaxial Layers

Growth and Properties of Ultrathin Epitaxial Layers
Author:
Publisher: Elsevier
Total Pages: 673
Release: 1997-06-18
Genre: Science
ISBN: 0080532675

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Although there has been steady progress in understanding aspects of epitaxial growth throughout the last 30 years of modern surface science, work in this area has intensified greatly in the last 5 years. A number of factors have contributed to this expansion. One has been the general trend in surface science to tackle problems of increasing complexity as confidence is gained in the methodology, so for example, the role of oxide/metal interfaces in determining the properties of many practical supported catalysts is now being explored in greater detail. A second factor is the recognition of the potential importance of artificial multilayer materials not only in semiconductor devices but also in metal/metal systems because of their novel magnetic properties. Perhaps even more important than either of these application areas, however, is the newly-discovered power of scanning probe microscopies, and most notably scanning tunneling microscopy (STM), to provide the means to study epitaxial growth phenomena on an atomic scale under a wide range of conditions. These techniques have also contributed to revitalised interest in methods of fabricating and exploiting artificial structures (lateral as well as in layers) on a nanometre scale. This volume, on Growth and Properties of Ultrathin Epitaxial Layers, includes a collection of articles which reflects the present state of activity in this field. The emphasis is on metals and oxides rather than semiconductors.


Metal Oxide-Based Thin Film Structures

Metal Oxide-Based Thin Film Structures
Author: Nini Pryds
Publisher: Elsevier
Total Pages: 562
Release: 2017-09-07
Genre: Technology & Engineering
ISBN: 0081017529

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Metal Oxide-Based Thin Film Structures: Formation, Characterization and Application of Interface-Based Phenomena bridges the gap between thin film deposition and device development by exploring the synthesis, properties and applications of thin film interfaces. Part I deals with theoretical and experimental aspects of epitaxial growth, the structure and morphology of oxide-metal interfaces deposited with different deposition techniques and new developments in growth methods. Part II concerns analysis techniques for the electrical, optical, magnetic and structural properties of thin film interfaces. In Part III, the emphasis is on ionic and electronic transport at the interfaces of Metal-oxide thin films. Part IV discusses methods for tailoring metal oxide thin film interfaces for specific applications, including microelectronics, communication, optical electronics, catalysis, and energy generation and conservation. This book is an essential resource for anyone seeking to further their knowledge of metal oxide thin films and interfaces, including scientists and engineers working on electronic devices and energy systems and those engaged in research into electronic materials. Introduces the theoretical and experimental aspects of epitaxial growth for the benefit of readers new to the field Explores state-of-the-art analysis techniques and their application to interface properties in order to give a fuller understanding of the relationship between macroscopic properties and atomic-scale manipulation Discusses techniques for tailoring thin film interfaces for specific applications, including information, electronics and energy technologies, making this book essential reading for materials scientists and engineers alike


Novel Complex Oxide Structures Using Deintercalation

Novel Complex Oxide Structures Using Deintercalation
Author: Kyu Ho Lee
Publisher:
Total Pages:
Release: 2022
Genre:
ISBN:

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The discovery of novel materials brings diverse scientific opportunities by introducing novel physical phenomena, opening ways to verify and formulate theories, and enabling revolutionary industrial applications. Stabilization of novel structures in complex oxide materials is in particular of strong interest, as these materials display a broad spectrum of physical and chemical properties, along with dramatic variations in the material properties upon subtle changes in their structures. The stabilization of a material is largely governed by thermodynamic variables such as temperature, pressure, and chemical potential. Hence, stabilizing a novel, unconventional material usually requires that one or more of these thermodynamic variables are maintained at values far from the standard conditions. Epitaxial thin film growth, in which the target material is artificially exposed to large effective pressure due to the forced geometrical match with an underlying substrate with different unit cell dimensions, is a well-established example that satisfies this criterion. Another relevant example is ion intercalation, where relatively small ions such as lithium are inserted into a material (usually a two-dimensional van der Waals material) by electrochemically tuning the chemical potential of the ions, thereby changing the material's physical and chemical properties. In this work, I will show that controlled ionic modification via deintercalation can be an effective approach to stabilize novel complex oxides and demonstrate this in two material systems. First, I will discuss the meta-stable formation of IrO$_{x}$ via deintercalation of strontium in SrIrO$_{3}$, which demonstrates high oxygen evolution reaction (OER) activity and good chemical stability in acid. This motivates design strategies for high-activity OER catalysts such as the stabilization of a novel columbite polymorph of IrO$_{2}$, which I demonstrate can be achieved via epitaxial thin film growth. Second, I will show that oxygen deintercalation of perovskite nickelate stabilizes infinite-layer \textit{Ln}NiO$_{2}$ (\textit{Ln} = lanthanide), which upon hole-doping hosts unconventional superconductivity and shows striking similarities in the superconducting phase diagram to that of the cuprates despite marked differences in the two systems. Overall, this work highlights deintercalation as a powerful technique to stabilize novel complex oxides that is widely applicable to various material systems. As this approach has been rather underutilized relative to other conventional methods, there is great potential to further discover novel materials using this technique.


High Quality Molecular Beam Epitaxy Growth and Characterization of Lead Titanate Zirconate Based Complex-oxides

High Quality Molecular Beam Epitaxy Growth and Characterization of Lead Titanate Zirconate Based Complex-oxides
Author: Xing Gu
Publisher:
Total Pages:
Release: 2008
Genre: Epitaxy
ISBN:

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Research interest in complex oxides has resurged owing to progress in modern epitaxial techniques. Among such oxides, lead-titanate-based thin films such as PbTiO3 (PTO) and Pb(ZrxTi1?x)O3 (PZT) offer attractive advantages for a wide variety of applications. Moreover, integration between functional oxides with compound semiconductors has the potential to realize multi-functional devices which enjoy the properties from both groups of materials. Ferroelectric materials with a perovskite structure (ABO3) and semiconductors such as GaN with a hexagonal structure, require a careful choice of a bridge layer and suitable epitaxial technique. Molecular beam epitaxy (MBE) has been an established technique in providing epitaxial growth with high crystal perfection and precise control over material composition. Single-crystal oxides grown by molecular beam epitaxy (MBE) can in principle avoid grain boundaries and provide a sharp interface as well. In this dissertation, the MBE growth mechanism of PZT was investigated. In-situ RHEED patterns indicate that the growth of PTO and PZT occur in a two-dimensional, layer by layer mode, as confirmed by a streaky pattern. The crystal quality of PTO, PZO, and PZT thin films prepared by MBE are evaluated by X-ray diffraction (XRD), and have a full width at half maximum (FWHM) value of 4 arcmin for an 80nm thick layer. Optical properties of the PTO thin films have been characterized by variable angle spectroscopic ellipsometry (VASE), and well resolved dielectric functions are extracted. The refractive index is determined as 2.605 at 633 nm, and bandgap energy as 3.778eV. The electrical properties of the PTO and PZT are evaluated by the measurement of polarization-field hysteresis loops, give a remanent polarization of 83 [mu]C/cm2 and a coercive field of 77 kV/cm. Lead oxide (PbO), titanium dioxide (TiO2), and zirconium dioxide (ZrO2), on GaN templates for potential PZT/GaN integration. The epitaxial growth of TiO2, PbO, and ZrO2 is realized on GaN templates for the first time by MBE. The PbO epitaxial layer was also used as a nucleation layer to enable single crystalline, perovskite PTO growth on GaN.