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Flash Memory Integration

Flash Memory Integration
Author: Jalil Boukhobza
Publisher: Elsevier
Total Pages: 268
Release: 2017-03-10
Genre: Technology & Engineering
ISBN: 008101158X

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4 zettabytes (4 billion terabytes) of data generated in 2013, 44 zettabytes predicted for 2020 and 185 zettabytes for 2025. These figures are staggering and perfectly illustrate this new era of data deluge. Data has become a major economic and social challenge. The speed of processing of these data is the weakest link in a computer system: the storage system. It is therefore crucial to optimize this operation. During the last decade, storage systems have experienced a major revolution: the advent of flash memory. Flash Memory Integration: Performance and Energy Issues contributes to a better understanding of these revolutions. The authors offer us an insight into the integration of flash memory in computer systems, their behavior in performance and in power consumption compared to traditional storage systems. The book also presents, in their entirety, various methods for measuring the performance and energy consumption of storage systems for embedded as well as desktop/server computer systems. We are invited on a journey to the memories of the future. Ideal for computer scientists, featuring low level details to concentrate on system issues Tackles flash memory aspects while spanning domains such as embedded systems and HPC Contains an exhaustive set of experimental results conducted in the Lab-STICC laboratory Provides details on methodologies to perform performance and energy measurements on flash storage systems


Flash Memory Integration

Flash Memory Integration
Author: Jalil Boukhobza
Publisher:
Total Pages: 250
Release: 2017
Genre: Electronic book
ISBN:

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3D Flash Memories

3D Flash Memories
Author: Rino Micheloni
Publisher: Springer
Total Pages: 391
Release: 2016-05-26
Genre: Computers
ISBN: 9401775125

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This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.


Inside NAND Flash Memories

Inside NAND Flash Memories
Author: Rino Micheloni
Publisher: Springer Science & Business Media
Total Pages: 582
Release: 2010-07-27
Genre: Technology & Engineering
ISBN: 9048194318

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Digital photography, MP3, digital video, etc. make extensive use of NAND-based Flash cards as storage media. To realize how much NAND Flash memories pervade every aspect of our life, just imagine how our recent habits would change if the NAND memories suddenly disappeared. To take a picture it would be necessary to find a film (as well as a traditional camera...), disks or even magnetic tapes would be used to record a video or to listen a song, and a cellular phone would return to be a simple mean of communication rather than a multimedia console. The development of NAND Flash memories will not be set down on the mere evolution of personal entertainment systems since a new killer application can trigger a further success: the replacement of Hard Disk Drives (HDDs) with Solid State Drives (SSDs). SSD is made up by a microcontroller and several NANDs. As NAND is the technology driver for IC circuits, Flash designers and technologists have to deal with a lot of challenges. Therefore, SSD (system) developers must understand Flash technology in order to exploit its benefits and countermeasure its weaknesses. Inside NAND Flash Memories is a comprehensive guide of the NAND world: from circuits design (analog and digital) to Flash reliability (including radiation effects), from testing issues to high-performance (DDR) interface, from error correction codes to NAND applications like Flash cards and SSDs.


Flash Memories

Flash Memories
Author: Paulo Cappelletti
Publisher: Springer Science & Business Media
Total Pages: 544
Release: 2013-11-27
Genre: Technology & Engineering
ISBN: 1461550157

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A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].


Flash Memories

Flash Memories
Author: Detlev Richter
Publisher: Springer Science & Business Media
Total Pages: 287
Release: 2013-09-12
Genre: Technology & Engineering
ISBN: 9400760825

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The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined. Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap. Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: · Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; · Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; · Technical characteristics are translated into quantitative performance indicators; · Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution; · Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements


Flash Memory Devices

Flash Memory Devices
Author: Cristian Zambelli
Publisher:
Total Pages: 0
Release: 2022
Genre:
ISBN: 9783036530130

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Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today "3D" means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement.


Nonvolatile Memory Technologies with Emphasis on Flash

Nonvolatile Memory Technologies with Emphasis on Flash
Author: Joe Brewer
Publisher: John Wiley & Sons
Total Pages: 766
Release: 2011-09-23
Genre: Technology & Engineering
ISBN: 1118211626

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Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.