Fet Modeling For Circuit Simulation PDF Download
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| Author | : Dileep A. Divekar |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 192 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461316871 |
Download FET Modeling for Circuit Simulation Book in PDF, ePub and Kindle
Circuit simulation is widely used for the design of circuits, both discrete and integrated. Device modeling is an impor tant aspect of circuit simulation since it is the link between the physical device and the sim ulate d device. Curren tly available circuit simulation programs provide a variety of built-in models. Many circuit designers use these built-in models whereas some incorporate new models in the circuit sim ulation programs. Understanding device modeling with particular emphasis on circuit simulation will be helpful in utilizing the built-in models more efficiently as well as in implementing new models. SPICE is used as a vehicle since it is the most widely used circuit sim ulation program. How ever, some issues are addressed which are not directly appli cable to SPICE but are applicable to circuit simulation in general. These discussions are useful for modifying SPICE and for understanding other simulation programs. The gen eric version 2G. 6 is used as a reference for SPICE, although numerous different versions exist with different modifications. This book describes field effect transistor models commonly used in a variety of circuit sim ulation pro grams. Understanding of the basic device physics and some familiarity with device modeling is assumed. Derivation of the model equations is not included. ( SPICE is a circuit sim ulation program available from EECS Industrial Support Office, 461 Cory Hall, University of Cali fornia, Berkeley, CA 94720. ) Acknowledgements I wish to express my gratitude to Valid Logic Systems, Inc.
| Author | : Dileep A Divekar |
| Publisher | : |
| Total Pages | : 204 |
| Release | : 1988-03-31 |
| Genre | : |
| ISBN | : 9781461316886 |
Download Fet Modeling for Circuit Simulation Book in PDF, ePub and Kindle
| Author | : Carlos Galup-Montoro |
| Publisher | : World Scientific |
| Total Pages | : 445 |
| Release | : 2007 |
| Genre | : Technology & Engineering |
| ISBN | : 9812568107 |
Download MOSFET Modeling for Circuit Analysis and Design Book in PDF, ePub and Kindle
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.
| Author | : Narain Arora |
| Publisher | : World Scientific |
| Total Pages | : 633 |
| Release | : 2007 |
| Genre | : Technology & Engineering |
| ISBN | : 9812707581 |
Download Mosfet Modeling for VLSI Simulation Book in PDF, ePub and Kindle
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
| Author | : Tor A. Fjeldly |
| Publisher | : Wiley-Interscience |
| Total Pages | : 440 |
| Release | : 1998 |
| Genre | : Computers |
| ISBN | : |
Download Introduction to Device Modeling and Circuit Simulation Book in PDF, ePub and Kindle
This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.
| Author | : Narain D. Arora |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 628 |
| Release | : 2012-12-06 |
| Genre | : Computers |
| ISBN | : 3709192471 |
Download MOSFET Models for VLSI Circuit Simulation Book in PDF, ePub and Kindle
Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
| Author | : Weidong Liu |
| Publisher | : World Scientific |
| Total Pages | : 435 |
| Release | : 2011 |
| Genre | : Technology & Engineering |
| ISBN | : 9812813993 |
Download BSIM4 and MOSFET Modeling for IC Simulation Book in PDF, ePub and Kindle
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
| Author | : Weidong Liu |
| Publisher | : World Scientific |
| Total Pages | : 435 |
| Release | : 2011 |
| Genre | : Technology & Engineering |
| ISBN | : 9812568638 |
Download BSIM4 and MOSFET Modeling for IC Simulation Book in PDF, ePub and Kindle
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
| Author | : Daniel Foty |
| Publisher | : Prentice Hall |
| Total Pages | : 680 |
| Release | : 1997 |
| Genre | : Technology & Engineering |
| ISBN | : |
Download MOSFET Modeling with SPICE Book in PDF, ePub and Kindle
This book will help CMOS circuit designers make the best possible use of SPICE models, and will prepare them for new models that may soon be introduced. Introduces SPICE modeling and its use in CMOS circuit design. Presents the formalism of model building and the semiconductor physics of MOS structures. Covers each important SPICE model, showing how to choose the appropriate model. Discusses the popular HSPICE Level 28, as well as Levels 1-3, BSIM 1-3, and MOS Model 9. Presents techniques for accounting for systematic process variations. Describes new model candidates, including the Power-Lane Model, the PCIM Model, and the EKV Model. Includes extensive examples throughout. Practicing engineers and scientists in the semiconductor industry; engineering faculty and students.
| Author | : Tatsuya Ezaki |
| Publisher | : World Scientific |
| Total Pages | : 381 |
| Release | : 2008-06-03 |
| Genre | : Technology & Engineering |
| ISBN | : 9814477575 |
Download Physics And Modeling Of Mosfets, The: Surface-potential Model Hisim Book in PDF, ePub and Kindle
This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.
