Ferromagnetic Resonant Tunneling Diodes
Author | : Swaroop Ganguly |
Publisher | : |
Total Pages | : |
Release | : 2005 |
Genre | : Diodes, Semiconductor |
ISBN | : |
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Author | : Swaroop Ganguly |
Publisher | : |
Total Pages | : |
Release | : 2005 |
Genre | : Diodes, Semiconductor |
ISBN | : |
Author | : Oliver (Oliver Edward) Thomas |
Publisher | : |
Total Pages | : 352 |
Release | : 2009 |
Genre | : Diodes, Semiconductor |
ISBN | : |
Author | : Hiroshi Mizuta |
Publisher | : Cambridge University Press |
Total Pages | : 255 |
Release | : 1995-09-14 |
Genre | : Science |
ISBN | : 0521432189 |
A comprehensive description of the physics and applications of resonant tunnelling diodes.
Author | : Michael Rüth |
Publisher | : |
Total Pages | : 0 |
Release | : 2011 |
Genre | : |
ISBN | : |
Author | : Jan A. Gaj |
Publisher | : Springer Science & Business Media |
Total Pages | : 484 |
Release | : 2011-01-12 |
Genre | : Science |
ISBN | : 3642158560 |
As materials whose semiconducting properties are influenced by magnetic ions, DMSs are central to the emerging field of spintronics. This volume focuses both on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions), and resulting phenomena.
Author | : O. G. Schmidt |
Publisher | : |
Total Pages | : 4 |
Release | : 2000 |
Genre | : |
ISBN | : |
We present a new concept and first results of resonant tunneling diodes based on self assembled Ge/Si islands. The proposed structure consists of closely stacked and vertically aligned Ge islands which create vertical channels with energetically deep thermalization layers and high Si double barriers for holes in the valence band. The current voltage (I-V) curve of such a layer sequence shows two resonances which we attribute to the heavy-heavy hole and heavy-light hole (lh) transition. The lh resonance is pronounced and negative differential resistance is conserved up to over 45 K. Magnetic field dependence of the resonances suggest that the tunneling current through the structure is of 2-dimensional character.
Author | : William A. Goddard III |
Publisher | : CRC Press |
Total Pages | : 1080 |
Release | : 2007-05-03 |
Genre | : Science |
ISBN | : 142000784X |
The ability to study and manipulate matter at the nanoscale is the defining feature of 21st-century science. The first edition of the standard-setting Handbook of Nanoscience, Engineering, and Technology saw the field through its infancy. Reassembling the preeminent team of leading scientists and researchers from all areas of nanoscience and nanote
Author | : V. G. Popov |
Publisher | : |
Total Pages | : 5 |
Release | : 2001 |
Genre | : |
ISBN | : |
Current oscillations in the negative differential conductance region of resonant tunneling diodes with different lateral pattern and size versus perpendicular to the tunneling current magnetic field have been studied. It is revealed that the value of the critical negative differential conductance or oscillations threshold that is the value of conductance when the oscillations in measurement circuit are arisen, unmonotonically depends on magnetic field. The relation of the observed dependence with inhomogeneous distribution of the tunneling current is discussed.
Author | : J.H Davies |
Publisher | : CRC Press |
Total Pages | : 313 |
Release | : 2003-05-01 |
Genre | : Science |
ISBN | : 1482269058 |
The 26th International Conference on the Physics of Semiconductors was held from 29 July to 2 August 2002 at the Edinburgh International Conference Centre. It is the premier meeting in the field of semiconductor physics and attracted over 1000 participants from leading academic, governmental and industrial institutions in some 50 countries around t
Author | : Lamia Mansouri |
Publisher | : |
Total Pages | : |
Release | : 1997 |
Genre | : |
ISBN | : |