Fabrication Of Submicron Self Aligned Regrown Emitter Heterojunction Bipolar Transistors PDF Download
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Author | : Sang Hoon Park |
Publisher | : |
Total Pages | : 344 |
Release | : 1997 |
Genre | : |
ISBN | : |
Download Fabrication of Submicron Self-aligned Regrown Emitter Heterojunction Bipolar Transistors Book in PDF, ePub and Kindle
Author | : Weihua Liu |
Publisher | : |
Total Pages | : 336 |
Release | : 1993 |
Genre | : |
ISBN | : |
Download Self-aligned Sub-micron Germanium-silicon/silicon Heterojunction Bipolar Transistors Book in PDF, ePub and Kindle
Author | : Ludwig Treitinger |
Publisher | : Springer Science & Business Media |
Total Pages | : 171 |
Release | : 2013-03-13 |
Genre | : Technology & Engineering |
ISBN | : 3642743609 |
Download Ultra-Fast Silicon Bipolar Technology Book in PDF, ePub and Kindle
Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Author | : Peter Ashburn |
Publisher | : |
Total Pages | : 222 |
Release | : 1988-08-18 |
Genre | : Technology & Engineering |
ISBN | : |
Download Design and Realization of Bipolar Transistors Book in PDF, ePub and Kindle
Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Author | : M. F. Chang |
Publisher | : World Scientific |
Total Pages | : 448 |
Release | : 1996 |
Genre | : Technology & Engineering |
ISBN | : 9789810220976 |
Download Current Trends in Heterojunction Bipolar Transistors Book in PDF, ePub and Kindle
Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Author | : |
Publisher | : |
Total Pages | : |
Release | : 1999 |
Genre | : |
ISBN | : |
Download Design, Simulation and Fabrication of a Self-aligned SiGe Based Heterojunction Bipolar Transistor for Low-power Operation Book in PDF, ePub and Kindle
Author | : Abdulabbas A. (Abdulabbas Abdullah) Hussain |
Publisher | : National Library of Canada = Bibliothèque nationale du Canada |
Total Pages | : 228 |
Release | : 1999 |
Genre | : |
ISBN | : 9780612484504 |
Download Design, Simulation and Fabrication of a Self-aligned SiGe Based Heterojunction Bipolar Transistor for Low-power Operation [microform] Book in PDF, ePub and Kindle
Author | : |
Publisher | : |
Total Pages | : 2616 |
Release | : 2002 |
Genre | : Chemistry |
ISBN | : |
Download Chemical Abstracts Book in PDF, ePub and Kindle
Author | : |
Publisher | : |
Total Pages | : 806 |
Release | : 1997 |
Genre | : Dissertation abstracts |
ISBN | : |
Download American Doctoral Dissertations Book in PDF, ePub and Kindle
Author | : Peter Ashburn |
Publisher | : Wiley |
Total Pages | : 286 |
Release | : 2004-02-06 |
Genre | : Technology & Engineering |
ISBN | : 0470090731 |
Download SiGe Heterojunction Bipolar Transistors Book in PDF, ePub and Kindle
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.